IRIS
SANSEVERINO, Annunziata
 Distribuzione geografica
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Continente #
EU - Europa 3.970
NA - Nord America 3.083
AS - Asia 1.221
Continente sconosciuto - Info sul continente non disponibili 22
SA - Sud America 5
OC - Oceania 2
AF - Africa 1
Totale 8.304
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Nazione #
US - Stati Uniti d'America 3.074
IE - Irlanda 1.263
SE - Svezia 853
CN - Cina 689
UA - Ucraina 521
DE - Germania 509
IT - Italia 436
TR - Turchia 287
SG - Singapore 118
GB - Regno Unito 117
FI - Finlandia 115
IN - India 106
BE - Belgio 43
FR - Francia 42
EU - Europa 22
AT - Austria 20
RU - Federazione Russa 17
VN - Vietnam 13
NL - Olanda 11
CA - Canada 7
LU - Lussemburgo 7
DK - Danimarca 5
CL - Cile 3
PL - Polonia 3
AU - Australia 2
HK - Hong Kong 2
JP - Giappone 2
KW - Kuwait 2
SK - Slovacchia (Repubblica Slovacca) 2
AR - Argentina 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
ES - Italia 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
LV - Lettonia 1
PA - Panama 1
PE - Perù 1
RO - Romania 1
Totale 8.304
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Città #
Dublin 1.263
Chandler 910
Jacksonville 387
Rome 299
Izmir 280
Nanjing 227
Ann Arbor 123
Lawrence 109
Princeton 109
Nanchang 98
Wilmington 90
Dearborn 87
Woodbridge 85
Ashburn 84
Boardman 76
Brooklyn 74
Singapore 73
Ogden 65
Pune 62
Beijing 55
Cassino 51
Seattle 45
Inglewood 44
Brussels 43
Changsha 41
Kunming 41
Tianjin 41
Hebei 35
Shenyang 31
Des Moines 29
Orange 28
Grafing 26
Jiaxing 26
New York 26
Milan 22
Verona 22
Helsinki 21
Los Angeles 21
Vienna 20
Hangzhou 18
Auburn Hills 16
Lanzhou 15
Changchun 13
Jinan 13
Brandenburg 12
Dong Ket 12
Gelsenkirchen 8
Saint Petersburg 8
San Francisco 8
Shanghai 8
Luxembourg 7
Norwalk 7
Staten Island 7
Bremen 6
Redwood City 6
Toronto 6
Naaldwijk 5
Ningbo 5
Copenhagen 4
Kocaeli 4
Philadelphia 4
San Mateo 4
Walnut 4
Dronten 3
Foggia 3
Genoa 3
Guangzhou 3
Hefei 3
Houston 3
Redmond 3
Shenzhen 3
Tappahannock 3
Warsaw 3
Zhengzhou 3
Bratislava 2
Cambridge 2
Clifton 2
Frankfurt am Main 2
Fuzhou 2
Grugliasco 2
Haikou 2
Kuwait City 2
Lappeenranta 2
London 2
Mansfield 2
Salerno 2
Shaoxing 2
Almere Stad 1
Amsterdam 1
Arce 1
Berlin 1
Bradford 1
Brno 1
Budapest 1
Charlotte 1
Chengdu 1
Delhi 1
Euerdorf 1
Hanoi 1
Hendon 1
Totale 5.441
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Nome #
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 107
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 104
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 103
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 103
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 98
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 96
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 94
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 94
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 93
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 93
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 93
Cosmic ray effects on power MOSFET 92
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 91
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 90
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 90
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 90
Perspective Performances of MOS-Gated GTO in High-Power Applications 90
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 90
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 89
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 88
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 88
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 88
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 88
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 87
Experimental measurement of recombination lifetime in proton irradiated power devices 87
Recombination lifetime measurements in silicon wafers 86
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 86
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 85
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 85
Modelling of the Input Characteristics of Bipolar JFET Structures 85
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 85
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 84
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 84
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 84
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 84
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 84
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 83
null 82
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 82
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 82
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 82
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 82
An Electrical Technique for the Measurement of the Surface Recombination Velocity 82
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 82
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 82
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 82
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 82
Experimental study of power MOSFET’s gate damage in radiation environment 82
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 81
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 81
Plasma dry etching for selective emitter formation in crystalline silicon based solar cell 81
Developments on DC/DC converters for the LHC experiment upgrades 81
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 80
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 80
null 80
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 80
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 80
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 79
Recombination Lifetime Measurements in Silicon 79
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 79
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 79
Thermal damage in SiC Schottky diodes induced by SE heavy ions 79
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 79
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 79
null 78
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 78
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 78
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 78
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 77
Novel Selective, Emitter Solar Cell Based on N-Type mc_Si 77
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 77
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 77
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 77
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 77
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 76
Performances of MOS-Gated GTO in High Voltage Power Applications 76
Power converters for future LHC experiments 76
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 75
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 75
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 74
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 73
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 72
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique 71
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 71
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 71
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 69
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 69
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 69
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 67
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 67
Reliability oriented design of power supplies for high energy physics applications 67
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 67
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 66
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 66
null 65
Lifetime Profile Reconstruction in Helium Implanted IGBTs 65
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 65
Comments on : Temperature Dependence of Carrier Lifetime in Si wafer 63
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD 62
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 62
Totale 8.093
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Categoria #
all - tutte 34.307
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.307
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020921 271 15 9 97 21 174 58 109 22 24 118 3
2020/2021948 106 5 105 136 10 143 9 106 33 120 40 135
2021/2022885 8 2 6 60 50 4 32 74 230 5 149 265
2022/20233.748 268 350 160 254 224 691 2 214 1.472 10 55 48
2023/2024678 64 37 43 22 23 113 83 74 107 8 2 102
2024/202551 51 0 0 0 0 0 0 0 0 0 0 0
Totale 8.709