IRIS
SANSEVERINO, Annunziata
 Distribuzione geografica
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Continente #
EU - Europa 4.838
NA - Nord America 4.528
AS - Asia 2.672
SA - Sud America 124
AF - Africa 25
Continente sconosciuto - Info sul continente non disponibili 22
OC - Oceania 3
Totale 12.212
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Nazione #
US - Stati Uniti d'America 4.461
IE - Irlanda 1.263
CN - Cina 1.122
SE - Svezia 866
SG - Singapore 762
DE - Germania 583
RU - Federazione Russa 538
UA - Ucraina 522
IT - Italia 489
TR - Turchia 295
HK - Hong Kong 206
GB - Regno Unito 176
FI - Finlandia 159
IN - India 144
BR - Brasile 84
VN - Vietnam 81
FR - Francia 75
BE - Belgio 45
CA - Canada 45
PL - Polonia 31
AT - Austria 25
EU - Europa 22
JP - Giappone 18
NL - Olanda 18
AR - Argentina 17
MX - Messico 16
ES - Italia 14
ZA - Sudafrica 14
BD - Bangladesh 10
EC - Ecuador 8
LT - Lituania 7
LU - Lussemburgo 7
CL - Cile 5
DK - Danimarca 5
ID - Indonesia 5
AE - Emirati Arabi Uniti 4
IL - Israele 4
IQ - Iraq 4
MA - Marocco 4
SA - Arabia Saudita 4
HU - Ungheria 3
PA - Panama 3
PE - Perù 3
PK - Pakistan 3
VE - Venezuela 3
AU - Australia 2
CO - Colombia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
KW - Kuwait 2
LV - Lettonia 2
MY - Malesia 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
UY - Uruguay 2
AL - Albania 1
BF - Burkina Faso 1
BG - Bulgaria 1
BY - Bielorussia 1
EE - Estonia 1
EG - Egitto 1
ET - Etiopia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LB - Libano 1
NI - Nicaragua 1
PR - Porto Rico 1
PW - Palau 1
TN - Tunisia 1
UZ - Uzbekistan 1
Totale 12.212
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Città #
Dublin 1.263
Chandler 910
Singapore 435
Jacksonville 387
Rome 305
Izmir 280
Ashburn 266
Dallas 248
Nanjing 227
The Dalles 218
Hong Kong 203
Beijing 196
Boardman 196
Ann Arbor 123
Hefei 118
Los Angeles 116
Lawrence 109
Princeton 109
Nanchang 98
Brooklyn 92
Wilmington 90
Dearborn 87
Woodbridge 85
New York 81
Moscow 77
Ogden 65
Cassino 63
Pune 62
Munich 59
Seattle 50
Brussels 45
Inglewood 45
Helsinki 42
Changsha 41
Council Bluffs 41
Kunming 41
Tianjin 41
Santa Clara 39
Hebei 35
Ho Chi Minh City 35
Shenyang 31
Des Moines 29
Orange 28
Warsaw 28
Grafing 26
Jiaxing 26
Milan 24
Verona 22
Vienna 21
Montreal 20
São Paulo 19
Hangzhou 18
Mumbai 18
Turku 18
Auburn Hills 16
Denver 16
Tokyo 16
Lanzhou 15
Boston 13
Changchun 13
Jinan 13
Johannesburg 13
Poplar 13
Stockholm 13
Brandenburg 12
Dong Ket 12
London 12
St Petersburg 12
Atlanta 11
Houston 11
Mexico City 11
Toronto 11
Assago 10
Chicago 10
Frankfurt am Main 10
Manchester 10
Orem 10
San Francisco 10
Hanoi 9
Padova 9
Chennai 8
Gelsenkirchen 8
Saint Petersburg 8
Shanghai 8
Luxembourg 7
Norwalk 7
Phoenix 7
Staten Island 7
Ankara 6
Bexley 6
Bremen 6
Nuremberg 6
Redwood City 6
Amsterdam 5
Lappeenranta 5
Naaldwijk 5
Ningbo 5
Ottawa 5
Philadelphia 5
City of London 4
Totale 7.786
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Nome #
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 160
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 152
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 149
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 146
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 145
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 141
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 139
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 137
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 135
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 134
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 133
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 133
Cosmic ray effects on power MOSFET 132
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 131
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 131
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 131
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 129
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 127
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 127
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 125
Perspective Performances of MOS-Gated GTO in High-Power Applications 125
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 124
Developments on DC/DC converters for the LHC experiment upgrades 124
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 123
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 123
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 123
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 123
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 123
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 122
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 122
An Electrical Technique for the Measurement of the Surface Recombination Velocity 121
Experimental measurement of recombination lifetime in proton irradiated power devices 121
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 120
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 120
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 120
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 119
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 118
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 117
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 117
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 116
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 116
Modelling of the Input Characteristics of Bipolar JFET Structures 115
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 115
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 114
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 114
Recombination lifetime measurements in silicon wafers 112
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 112
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 112
Power converters for future LHC experiments 112
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 111
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 111
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 111
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 111
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 111
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 110
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 110
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 109
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 109
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 109
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 108
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 108
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 107
Recombination Lifetime Measurements in Silicon 107
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 107
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 107
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 107
Experimental study of power MOSFET’s gate damage in radiation environment 107
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 106
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 105
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 105
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 104
Plasma dry etching for selective emitter formation in crystalline silicon based solar cell 104
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 104
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 104
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 103
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 103
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 103
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 102
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 102
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 102
Thermal damage in SiC Schottky diodes induced by SE heavy ions 100
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 100
Novel Selective, Emitter Solar Cell Based on N-Type mc_Si 98
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 97
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 96
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 96
Performances of MOS-Gated GTO in High Voltage Power Applications 96
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 96
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 96
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 94
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 94
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique 93
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 92
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 90
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 90
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 90
Lifetime Profile Reconstruction in Helium Implanted IGBTs 89
Design and realization of a 200 A low-cost high-side switch for automotive applications 87
Reliability oriented design of power supplies for high energy physics applications 87
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD 86
Totale 11.354
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Categoria #
all - tutte 57.484
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.484
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021586 0 0 0 0 0 143 9 106 33 120 40 135
2021/2022885 8 2 6 60 50 4 32 74 230 5 149 265
2022/20233.748 268 350 160 254 224 691 2 214 1.472 10 55 48
2023/2024678 64 37 43 22 23 113 83 74 107 8 2 102
2024/20251.852 66 52 133 44 175 18 230 104 632 15 241 142
2025/20262.146 311 635 145 395 568 92 0 0 0 0 0 0
Totale 12.656