IRIS
SANSEVERINO, Annunziata
 Distribuzione geografica
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Continente #
EU - Europa 4.031
NA - Nord America 3.328
AS - Asia 1.306
Continente sconosciuto - Info sul continente non disponibili 22
SA - Sud America 7
AF - Africa 3
OC - Oceania 2
Totale 8.699
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Nazione #
US - Stati Uniti d'America 3.319
IE - Irlanda 1.263
SE - Svezia 853
CN - Cina 694
DE - Germania 532
UA - Ucraina 521
IT - Italia 448
TR - Turchia 287
SG - Singapore 193
FI - Finlandia 137
GB - Regno Unito 118
IN - India 107
BE - Belgio 43
FR - Francia 42
EU - Europa 22
AT - Austria 20
RU - Federazione Russa 17
VN - Vietnam 13
NL - Olanda 12
CA - Canada 7
LU - Lussemburgo 7
DK - Danimarca 5
CL - Cile 3
PL - Polonia 3
AU - Australia 2
HK - Hong Kong 2
JP - Giappone 2
KW - Kuwait 2
LV - Lettonia 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
AR - Argentina 1
BR - Brasile 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
ES - Italia 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
KG - Kirghizistan 1
MA - Marocco 1
MY - Malesia 1
PA - Panama 1
PE - Perù 1
RO - Romania 1
ZA - Sudafrica 1
Totale 8.699
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Città #
Dublin 1.263
Chandler 910
Jacksonville 387
Rome 299
Izmir 280
Nanjing 227
Boardman 192
Singapore 143
Ann Arbor 123
Lawrence 109
Princeton 109
Nanchang 98
Wilmington 90
Dearborn 87
Woodbridge 85
Ashburn 84
Brooklyn 74
Los Angeles 66
Ogden 65
Pune 62
Beijing 55
Cassino 52
Seattle 45
Inglewood 44
Brussels 43
Changsha 41
Helsinki 41
Kunming 41
Tianjin 41
Hebei 35
Shenyang 31
Des Moines 29
Orange 28
Grafing 26
Jiaxing 26
New York 26
Munich 24
Milan 22
Verona 22
Santa Clara 21
Vienna 20
Hangzhou 18
Auburn Hills 16
Lanzhou 15
Changchun 13
Jinan 13
Brandenburg 12
Dong Ket 12
Padova 9
Gelsenkirchen 8
Saint Petersburg 8
San Francisco 8
Shanghai 8
Luxembourg 7
Norwalk 7
Staten Island 7
Bremen 6
Redwood City 6
Toronto 6
Naaldwijk 5
Ningbo 5
Copenhagen 4
Kocaeli 4
Philadelphia 4
San Mateo 4
Walnut 4
Dronten 3
Foggia 3
Genoa 3
Guangzhou 3
Hefei 3
Houston 3
London 3
Redmond 3
Shenzhen 3
Tappahannock 3
Warsaw 3
Zhengzhou 3
Bratislava 2
Cambridge 2
Clifton 2
Delhi 2
Espoo 2
Frankfurt am Main 2
Fuzhou 2
Grugliasco 2
Haikou 2
Kuwait City 2
Lappeenranta 2
Mansfield 2
Riga 2
Riyadh 2
Salerno 2
Shaoxing 2
Almere Stad 1
Amsterdam 1
Arce 1
Berlin 1
Bishkek 1
Bradford 1
Totale 5.749
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Nome #
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 109
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 107
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 107
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 106
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 105
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 101
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 100
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 100
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 98
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 97
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 97
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 96
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 95
Cosmic ray effects on power MOSFET 94
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 94
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 94
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 94
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 93
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 93
Perspective Performances of MOS-Gated GTO in High-Power Applications 93
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 92
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 91
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 90
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 90
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 89
Experimental measurement of recombination lifetime in proton irradiated power devices 89
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 88
Recombination lifetime measurements in silicon wafers 88
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 88
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 88
Modelling of the Input Characteristics of Bipolar JFET Structures 88
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 88
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 88
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 87
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 87
An Electrical Technique for the Measurement of the Surface Recombination Velocity 87
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 86
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 86
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 86
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 86
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 86
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 85
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 85
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 85
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 85
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 85
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 84
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 84
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 84
Experimental study of power MOSFET’s gate damage in radiation environment 84
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 83
Recombination Lifetime Measurements in Silicon 83
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 83
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 83
Plasma dry etching for selective emitter formation in crystalline silicon based solar cell 83
Developments on DC/DC converters for the LHC experiment upgrades 83
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 83
null 82
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 82
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 82
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 82
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 82
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 81
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 81
Thermal damage in SiC Schottky diodes induced by SE heavy ions 81
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 81
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 80
null 80
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 80
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 80
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 80
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 80
Novel Selective, Emitter Solar Cell Based on N-Type mc_Si 79
Power converters for future LHC experiments 79
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 79
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 79
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 78
null 78
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 77
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 77
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 77
Performances of MOS-Gated GTO in High Voltage Power Applications 77
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 76
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 75
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 75
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 74
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 72
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique 72
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 71
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 70
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 70
Reliability oriented design of power supplies for high energy physics applications 69
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 69
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 69
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 68
Lifetime Profile Reconstruction in Helium Implanted IGBTs 67
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 66
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 66
null 65
Comments on : Temperature Dependence of Carrier Lifetime in Si wafer 65
Totale 8.416
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Categoria #
all - tutte 39.902
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 39.902
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020529 0 0 0 0 21 174 58 109 22 24 118 3
2020/2021948 106 5 105 136 10 143 9 106 33 120 40 135
2021/2022885 8 2 6 60 50 4 32 74 230 5 149 265
2022/20233.748 268 350 160 254 224 691 2 214 1.472 10 55 48
2023/2024678 64 37 43 22 23 113 83 74 107 8 2 102
2024/2025453 66 52 133 44 158 0 0 0 0 0 0 0
Totale 9.111