IRIS
SANSEVERINO, Annunziata
 Distribuzione geografica
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Continente #
EU - Europa 6.829
NA - Nord America 5.987
AS - Asia 3.235
Continente sconosciuto - Info sul continente non disponibili 485
SA - Sud America 177
AF - Africa 43
OC - Oceania 3
Totale 16.759
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Nazione #
US - Stati Uniti d'America 5.887
SE - Svezia 2.732
CN - Cina 1.264
IE - Irlanda 1.263
SG - Singapore 982
DE - Germania 586
RU - Federazione Russa 582
UA - Ucraina 523
IT - Italia 510
TR - Turchia 302
HK - Hong Kong 242
GB - Regno Unito 190
IN - India 175
FI - Finlandia 160
VN - Vietnam 135
BR - Brasile 115
FR - Francia 87
CA - Canada 57
BE - Belgio 45
PL - Polonia 36
JP - Giappone 32
BD - Bangladesh 29
NL - Olanda 29
MX - Messico 27
AT - Austria 25
AR - Argentina 23
EU - Europa 22
ES - Italia 17
EC - Ecuador 15
ZA - Sudafrica 15
IQ - Iraq 13
MA - Marocco 10
PK - Pakistan 9
SA - Arabia Saudita 9
ID - Indonesia 8
LT - Lituania 8
LU - Lussemburgo 7
VE - Venezuela 7
CL - Cile 6
TN - Tunisia 6
CO - Colombia 5
DK - Danimarca 5
HU - Ungheria 5
UZ - Uzbekistan 5
AE - Emirati Arabi Uniti 4
IL - Israele 4
KE - Kenya 4
PA - Panama 4
CZ - Repubblica Ceca 3
GR - Grecia 3
JM - Giamaica 3
MY - Malesia 3
PE - Perù 3
AU - Australia 2
AZ - Azerbaigian 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EE - Estonia 2
EG - Egitto 2
ET - Etiopia 2
GT - Guatemala 2
JO - Giordania 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LV - Lettonia 2
PH - Filippine 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
UY - Uruguay 2
AL - Albania 1
BF - Burkina Faso 1
BG - Bulgaria 1
BO - Bolivia 1
BY - Bielorussia 1
GE - Georgia 1
HN - Honduras 1
IR - Iran 1
LB - Libano 1
MK - Macedonia 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PR - Porto Rico 1
PT - Portogallo 1
PW - Palau 1
RE - Reunion 1
SV - El Salvador 1
VI - Stati Uniti Isole Vergini 1
Totale 16.296
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Città #
Stockholm 1.879
Dublin 1.263
Chandler 910
Singapore 569
Ashburn 468
San Jose 415
Council Bluffs 406
Jacksonville 387
The Dalles 329
Rome 306
Izmir 280
Dallas 256
Hong Kong 239
Nanjing 228
Beijing 213
Boardman 196
Los Angeles 131
Ann Arbor 123
Hefei 118
Moscow 118
Lawrence 109
Princeton 109
New York 99
Nanchang 98
Brooklyn 96
Wilmington 90
Dearborn 87
Woodbridge 85
Columbus 77
Ogden 65
Cassino 63
Pune 62
Munich 59
Santa Clara 54
Seattle 52
Ho Chi Minh City 48
Brussels 45
Inglewood 45
Orem 45
Helsinki 42
Changsha 41
Kunming 41
Tianjin 41
Hebei 35
Warsaw 33
Des Moines 31
Shenyang 31
Tokyo 29
Orange 28
Phoenix 27
Grafing 26
Jiaxing 26
Montreal 25
Hanoi 24
Milan 24
São Paulo 24
Verona 24
Mumbai 22
Vienna 21
Denver 20
Hangzhou 19
Houston 19
Turku 18
Auburn Hills 16
Chennai 16
Lanzhou 16
Mexico City 16
Chicago 15
Manchester 15
Poplar 15
Amsterdam 14
Atlanta 14
Boston 14
San Francisco 14
Changchun 13
Frankfurt am Main 13
Jinan 13
Johannesburg 13
London 13
St Petersburg 13
Toronto 13
Brandenburg 12
Dong Ket 12
Assago 10
Padova 9
Gelsenkirchen 8
New Delhi 8
Saint Petersburg 8
Shanghai 8
Staten Island 8
Ankara 7
Luxembourg 7
Norwalk 7
Philadelphia 7
Quito 7
Bexley 6
Bremen 6
Haiphong 6
Lappeenranta 6
Nuremberg 6
Totale 11.297
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Nome #
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.021
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 185
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 181
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 180
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 178
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 171
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 167
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 166
Cosmic ray effects on power MOSFET 159
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 158
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 157
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 157
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 156
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 156
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 155
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 154
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 152
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 151
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 149
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 148
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 146
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 146
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 145
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 145
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 144
Perspective Performances of MOS-Gated GTO in High-Power Applications 144
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 144
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 142
An Electrical Technique for the Measurement of the Surface Recombination Velocity 141
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 140
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 139
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 139
Developments on DC/DC converters for the LHC experiment upgrades 139
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 139
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 139
Experimental measurement of recombination lifetime in proton irradiated power devices 139
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 137
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 136
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 135
Modelling of the Input Characteristics of Bipolar JFET Structures 135
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 135
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 135
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 133
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 133
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 132
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 132
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 132
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 131
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 131
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 131
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 130
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 129
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 128
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 127
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 126
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 126
Recombination lifetime measurements in silicon wafers 125
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 125
Recombination Lifetime Measurements in Silicon 125
Power converters for future LHC experiments 125
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 125
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 125
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 124
Experimental study of power MOSFET’s gate damage in radiation environment 124
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 123
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 123
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 122
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 121
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 121
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 120
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 120
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 119
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 118
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 118
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 118
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 118
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 118
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 118
Plasma dry etching for selective emitter formation in crystalline silicon based solar cell 117
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 116
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 116
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 116
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 115
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 114
Novel Selective, Emitter Solar Cell Based on N-Type mc_Si 114
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 114
Thermal damage in SiC Schottky diodes induced by SE heavy ions 112
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 112
Performances of MOS-Gated GTO in High Voltage Power Applications 111
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 111
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 110
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 109
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 109
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 108
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 108
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 107
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique 107
Design and realization of a 200 A low-cost high-side switch for automotive applications 106
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD 104
Optimised 2-D Design and Fabrication of Screen Printed Buried Contacts Silicon Solar Cells 100
Totale 15.117
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Categoria #
all - tutte 69.819
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.819
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022877 0 2 6 60 50 4 32 74 230 5 149 265
2022/20233.748 268 350 160 254 224 691 2 214 1.472 10 55 48
2023/2024678 64 37 43 22 23 113 83 74 107 8 2 102
2024/20251.852 66 52 133 44 175 18 230 104 632 15 241 142
2025/20265.786 311 635 145 395 568 432 539 127 158 2.244 191 41
2026/2027463 278 185 0 0 0 0 0 0 0 0 0 0
Totale 16.759