IRIS
SANSEVERINO, Annunziata
 Distribuzione geografica
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Continente #
EU - Europa 6.813
NA - Nord America 5.559
AS - Asia 3.217
SA - Sud America 171
AF - Africa 43
Continente sconosciuto - Info sul continente non disponibili 22
OC - Oceania 3
Totale 15.828
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Nazione #
US - Stati Uniti d'America 5.466
SE - Svezia 2.732
IE - Irlanda 1.263
CN - Cina 1.259
SG - Singapore 969
DE - Germania 586
RU - Federazione Russa 582
UA - Ucraina 523
IT - Italia 499
TR - Turchia 302
HK - Hong Kong 242
GB - Regno Unito 189
IN - India 175
FI - Finlandia 160
VN - Vietnam 135
BR - Brasile 112
FR - Francia 85
CA - Canada 53
BE - Belgio 45
PL - Polonia 36
JP - Giappone 32
BD - Bangladesh 29
NL - Olanda 29
MX - Messico 26
AT - Austria 25
AR - Argentina 22
EU - Europa 22
ES - Italia 16
ZA - Sudafrica 15
EC - Ecuador 14
IQ - Iraq 13
MA - Marocco 10
PK - Pakistan 9
SA - Arabia Saudita 9
ID - Indonesia 8
LT - Lituania 8
LU - Lussemburgo 7
CL - Cile 6
TN - Tunisia 6
VE - Venezuela 6
CO - Colombia 5
DK - Danimarca 5
HU - Ungheria 5
UZ - Uzbekistan 5
AE - Emirati Arabi Uniti 4
IL - Israele 4
KE - Kenya 4
PA - Panama 4
CZ - Repubblica Ceca 3
GR - Grecia 3
JM - Giamaica 3
MY - Malesia 3
PE - Perù 3
AU - Australia 2
AZ - Azerbaigian 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EE - Estonia 2
EG - Egitto 2
ET - Etiopia 2
GT - Guatemala 2
JO - Giordania 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LV - Lettonia 2
PH - Filippine 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
UY - Uruguay 2
AL - Albania 1
BF - Burkina Faso 1
BG - Bulgaria 1
BO - Bolivia 1
BY - Bielorussia 1
GE - Georgia 1
HN - Honduras 1
IR - Iran 1
LB - Libano 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PR - Porto Rico 1
PT - Portogallo 1
PW - Palau 1
RE - Reunion 1
Totale 15.828
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Città #
Stockholm 1.879
Dublin 1.263
Chandler 910
Singapore 567
Ashburn 457
San Jose 412
Jacksonville 387
The Dalles 329
Rome 306
Izmir 280
Dallas 256
Hong Kong 239
Nanjing 228
Beijing 211
Boardman 196
Council Bluffs 135
Los Angeles 131
Ann Arbor 123
Hefei 118
Moscow 118
Lawrence 109
Princeton 109
New York 99
Nanchang 98
Brooklyn 96
Wilmington 90
Dearborn 87
Woodbridge 85
Ogden 65
Cassino 63
Pune 62
Munich 59
Seattle 52
Ho Chi Minh City 48
Santa Clara 48
Brussels 45
Inglewood 45
Orem 45
Helsinki 42
Changsha 41
Kunming 41
Tianjin 41
Hebei 35
Warsaw 33
Shenyang 31
Des Moines 30
Tokyo 29
Orange 28
Grafing 26
Jiaxing 26
Montreal 25
Hanoi 24
Milan 24
São Paulo 23
Verona 23
Mumbai 22
Vienna 21
Denver 20
Hangzhou 19
Turku 18
Houston 17
Auburn Hills 16
Chennai 16
Lanzhou 16
Mexico City 16
Manchester 15
Poplar 15
Amsterdam 14
Boston 14
San Francisco 14
Atlanta 13
Changchun 13
Chicago 13
Frankfurt am Main 13
Jinan 13
Johannesburg 13
London 13
St Petersburg 13
Brandenburg 12
Dong Ket 12
Toronto 12
Phoenix 11
Assago 10
Padova 9
Gelsenkirchen 8
New Delhi 8
Saint Petersburg 8
Shanghai 8
Ankara 7
Luxembourg 7
Norwalk 7
Philadelphia 7
Staten Island 7
Bexley 6
Bremen 6
Haiphong 6
Lappeenranta 6
Nuremberg 6
Quito 6
Redwood City 6
Totale 10.904
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Nome #
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.016
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 176
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 175
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 175
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 171
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 164
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 162
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 161
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 153
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 152
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 152
Cosmic ray effects on power MOSFET 151
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 151
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 150
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 149
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 148
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 147
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 147
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 147
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 147
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 144
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 144
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 143
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 143
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 141
Perspective Performances of MOS-Gated GTO in High-Power Applications 138
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 138
An Electrical Technique for the Measurement of the Surface Recombination Velocity 138
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 138
Developments on DC/DC converters for the LHC experiment upgrades 137
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 137
Experimental measurement of recombination lifetime in proton irradiated power devices 137
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 136
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 136
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 135
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 135
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 134
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 133
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 133
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 130
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 130
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 130
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 130
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 129
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 129
Modelling of the Input Characteristics of Bipolar JFET Structures 129
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 129
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 127
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 127
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 126
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 125
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 124
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 124
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 122
Recombination lifetime measurements in silicon wafers 122
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 122
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 122
Recombination Lifetime Measurements in Silicon 122
Power converters for future LHC experiments 122
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 122
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 121
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 121
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 121
Experimental study of power MOSFET’s gate damage in radiation environment 121
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 120
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 119
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 119
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 119
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 118
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 118
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 117
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 116
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 116
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 116
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 115
Plasma dry etching for selective emitter formation in crystalline silicon based solar cell 115
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 114
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 114
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 113
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 113
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 113
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 113
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 112
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 111
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 111
Thermal damage in SiC Schottky diodes induced by SE heavy ions 110
Novel Selective, Emitter Solar Cell Based on N-Type mc_Si 109
Performances of MOS-Gated GTO in High Voltage Power Applications 109
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 109
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 109
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 108
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 107
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 105
Design and realization of a 200 A low-cost high-side switch for automotive applications 102
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 102
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 102
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD 102
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique 101
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 100
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 99
Totale 14.737
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Categoria #
all - tutte 66.754
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 66.754
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021135 0 0 0 0 0 0 0 0 0 0 0 135
2021/2022885 8 2 6 60 50 4 32 74 230 5 149 265
2022/20233.748 268 350 160 254 224 691 2 214 1.472 10 55 48
2023/2024678 64 37 43 22 23 113 83 74 107 8 2 102
2024/20251.852 66 52 133 44 175 18 230 104 632 15 241 142
2025/20265.778 311 635 145 395 568 432 539 127 158 2.244 191 33
Totale 16.288