IRIS
SANSEVERINO, Annunziata
 Distribuzione geografica
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Continente #
EU - Europa 4.855
NA - Nord America 4.636
AS - Asia 2.765
SA - Sud America 129
AF - Africa 26
Continente sconosciuto - Info sul continente non disponibili 22
OC - Oceania 3
Totale 12.436
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Nazione #
US - Stati Uniti d'America 4.561
IE - Irlanda 1.263
CN - Cina 1.124
SE - Svezia 871
SG - Singapore 835
DE - Germania 583
RU - Federazione Russa 538
UA - Ucraina 522
IT - Italia 489
TR - Turchia 296
HK - Hong Kong 210
GB - Regno Unito 181
FI - Finlandia 159
IN - India 152
BR - Brasile 89
VN - Vietnam 81
FR - Francia 75
CA - Canada 49
BE - Belgio 45
PL - Polonia 35
AT - Austria 25
JP - Giappone 23
EU - Europa 22
MX - Messico 20
NL - Olanda 19
AR - Argentina 17
ES - Italia 15
ZA - Sudafrica 15
BD - Bangladesh 10
EC - Ecuador 8
LT - Lituania 8
LU - Lussemburgo 7
CL - Cile 5
DK - Danimarca 5
ID - Indonesia 5
AE - Emirati Arabi Uniti 4
IL - Israele 4
IQ - Iraq 4
MA - Marocco 4
SA - Arabia Saudita 4
HU - Ungheria 3
PA - Panama 3
PE - Perù 3
PK - Pakistan 3
VE - Venezuela 3
AU - Australia 2
CO - Colombia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
KW - Kuwait 2
LV - Lettonia 2
MY - Malesia 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
UY - Uruguay 2
AL - Albania 1
BF - Burkina Faso 1
BG - Bulgaria 1
BY - Bielorussia 1
EE - Estonia 1
EG - Egitto 1
ET - Etiopia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LB - Libano 1
NI - Nicaragua 1
PR - Porto Rico 1
PW - Palau 1
TN - Tunisia 1
UZ - Uzbekistan 1
Totale 12.436
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Città #
Dublin 1.263
Chandler 910
Singapore 508
Jacksonville 387
Rome 305
Ashburn 288
Izmir 280
Dallas 248
Nanjing 227
The Dalles 225
Hong Kong 207
Beijing 196
Boardman 196
Los Angeles 126
Ann Arbor 123
Hefei 118
Lawrence 109
Princeton 109
Nanchang 98
Brooklyn 92
Wilmington 90
New York 88
Dearborn 87
Woodbridge 85
Moscow 77
Ogden 65
Cassino 63
Pune 62
Munich 59
Seattle 51
Brussels 45
Inglewood 45
Helsinki 42
Changsha 41
Council Bluffs 41
Kunming 41
Tianjin 41
Santa Clara 40
Hebei 35
Ho Chi Minh City 35
Warsaw 32
Shenyang 31
Des Moines 29
Orange 28
Grafing 26
Jiaxing 26
Milan 24
Montreal 24
São Paulo 22
Verona 22
Tokyo 21
Vienna 21
Denver 20
Mumbai 19
Hangzhou 18
Orem 18
Stockholm 18
Turku 18
Auburn Hills 16
Lanzhou 15
Poplar 15
Boston 14
Houston 14
Atlanta 13
Changchun 13
Chennai 13
Jinan 13
Johannesburg 13
London 13
Mexico City 13
Brandenburg 12
Dong Ket 12
Manchester 12
St Petersburg 12
Chicago 11
San Jose 11
Toronto 11
Assago 10
Frankfurt am Main 10
San Francisco 10
Hanoi 9
Padova 9
Gelsenkirchen 8
Phoenix 8
Saint Petersburg 8
Shanghai 8
Ankara 7
Luxembourg 7
Norwalk 7
Staten Island 7
Amsterdam 6
Bexley 6
Bremen 6
Nuremberg 6
Redwood City 6
Lappeenranta 5
Naaldwijk 5
Ningbo 5
Ottawa 5
Philadelphia 5
Totale 7.974
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Nome #
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 161
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 154
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 151
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 148
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 147
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 143
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 141
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 139
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 137
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 136
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 136
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 136
Cosmic ray effects on power MOSFET 134
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 134
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 133
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 132
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 131
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 130
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 130
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 129
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 129
Perspective Performances of MOS-Gated GTO in High-Power Applications 126
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 126
Developments on DC/DC converters for the LHC experiment upgrades 126
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 125
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 125
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 125
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 125
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 124
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 123
An Electrical Technique for the Measurement of the Surface Recombination Velocity 122
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 122
Experimental measurement of recombination lifetime in proton irradiated power devices 122
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 121
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 121
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 121
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 121
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 120
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 119
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 118
Modelling of the Input Characteristics of Bipolar JFET Structures 117
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 117
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 117
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 115
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 115
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 115
Power converters for future LHC experiments 115
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 114
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 114
Recombination lifetime measurements in silicon wafers 113
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 113
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 113
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 113
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 113
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 113
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 112
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 112
Experimental study of power MOSFET’s gate damage in radiation environment 112
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 111
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 110
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 110
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 110
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 110
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 110
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 109
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 109
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 108
Recombination Lifetime Measurements in Silicon 108
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 108
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 108
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 106
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 106
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 106
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 106
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 105
Plasma dry etching for selective emitter formation in crystalline silicon based solar cell 105
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 105
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 104
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 103
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 103
Thermal damage in SiC Schottky diodes induced by SE heavy ions 103
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 101
Novel Selective, Emitter Solar Cell Based on N-Type mc_Si 100
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 99
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 99
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 98
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 97
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 97
Performances of MOS-Gated GTO in High Voltage Power Applications 96
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 96
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique 95
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 94
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 94
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 91
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 91
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 90
Design and realization of a 200 A low-cost high-side switch for automotive applications 89
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD 89
Lifetime Profile Reconstruction in Helium Implanted IGBTs 89
Reliability oriented design of power supplies for high energy physics applications 88
Totale 11.552
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Categoria #
all - tutte 58.088
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.088
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021586 0 0 0 0 0 143 9 106 33 120 40 135
2021/2022885 8 2 6 60 50 4 32 74 230 5 149 265
2022/20233.748 268 350 160 254 224 691 2 214 1.472 10 55 48
2023/2024678 64 37 43 22 23 113 83 74 107 8 2 102
2024/20251.852 66 52 133 44 175 18 230 104 632 15 241 142
2025/20262.370 311 635 145 395 568 316 0 0 0 0 0 0
Totale 12.880