IRIS
SANSEVERINO, Annunziata
 Distribuzione geografica
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Continente #
EU - Europa 7.033
NA - Nord America 6.649
AS - Asia 3.246
Continente sconosciuto - Info sul continente non disponibili 490
SA - Sud America 180
AF - Africa 45
OC - Oceania 3
Totale 17.646
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Nazione #
US - Stati Uniti d'America 6.498
SE - Svezia 2.732
CN - Cina 1.267
IE - Irlanda 1.264
SG - Singapore 985
IT - Italia 695
DE - Germania 586
RU - Federazione Russa 583
UA - Ucraina 523
TR - Turchia 302
HK - Hong Kong 245
GB - Regno Unito 198
IN - India 175
FI - Finlandia 160
VN - Vietnam 135
BR - Brasile 117
FR - Francia 89
CA - Canada 70
BE - Belgio 45
PL - Polonia 36
JP - Giappone 32
BD - Bangladesh 29
NL - Olanda 29
MX - Messico 28
AT - Austria 25
AR - Argentina 23
EU - Europa 22
ES - Italia 17
EC - Ecuador 15
ZA - Sudafrica 15
IQ - Iraq 13
MA - Marocco 10
LT - Lituania 9
PK - Pakistan 9
SA - Arabia Saudita 9
ID - Indonesia 8
LU - Lussemburgo 7
PR - Porto Rico 7
VE - Venezuela 7
CL - Cile 6
CO - Colombia 6
GT - Guatemala 6
RO - Romania 6
SV - El Salvador 6
TN - Tunisia 6
DK - Danimarca 5
GP - Guadalupe 5
HN - Honduras 5
HU - Ungheria 5
IL - Israele 5
NI - Nicaragua 5
UZ - Uzbekistan 5
AE - Emirati Arabi Uniti 4
CR - Costa Rica 4
KE - Kenya 4
PA - Panama 4
TT - Trinidad e Tobago 4
CZ - Repubblica Ceca 3
EE - Estonia 3
GR - Grecia 3
JM - Giamaica 3
MY - Malesia 3
PE - Perù 3
PH - Filippine 3
AU - Australia 2
AZ - Azerbaigian 2
CW - ???statistics.table.value.countryCode.CW??? 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EG - Egitto 2
ET - Etiopia 2
JO - Giordania 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LV - Lettonia 2
SC - Seychelles 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
UY - Uruguay 2
AL - Albania 1
BF - Burkina Faso 1
BG - Bulgaria 1
BM - Bermuda 1
BO - Bolivia 1
BY - Bielorussia 1
GE - Georgia 1
IR - Iran 1
LB - Libano 1
MD - Moldavia 1
MK - Macedonia 1
NP - Nepal 1
OM - Oman 1
PT - Portogallo 1
PW - Palau 1
RE - Reunion 1
VI - Stati Uniti Isole Vergini 1
Totale 17.180
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Città #
Stockholm 1.879
Dublin 1.263
Chandler 910
Ashburn 633
Singapore 569
San Jose 536
Council Bluffs 490
Jacksonville 387
The Dalles 329
Rome 310
Izmir 280
Dallas 258
Hong Kong 241
Nanjing 228
Beijing 213
Boardman 197
Los Angeles 136
Ann Arbor 123
Hefei 118
Moscow 118
Lawrence 109
Princeton 109
New York 101
Brooklyn 99
Nanchang 98
Wilmington 90
Dearborn 87
Woodbridge 85
Columbus 78
Milan 77
Santa Clara 68
Ogden 65
Cassino 63
Pune 62
Munich 59
Seattle 53
Ho Chi Minh City 48
Brussels 45
Inglewood 45
Orem 45
Helsinki 42
Changsha 41
Kunming 41
Tianjin 41
Phoenix 39
Hebei 35
Warsaw 33
Des Moines 31
Shenyang 31
Tokyo 29
Orange 28
Montreal 27
Grafing 26
Jiaxing 26
Verona 25
Hanoi 24
Miano 24
São Paulo 24
Denver 22
Mumbai 22
Vienna 21
Houston 20
Hangzhou 19
Atlanta 18
Turku 18
Auburn Hills 16
Chennai 16
Chicago 16
Lanzhou 16
Mexico City 16
Manchester 15
Poplar 15
San Francisco 15
Amsterdam 14
Boston 14
Toronto 14
Changchun 13
Frankfurt am Main 13
Jinan 13
Johannesburg 13
London 13
St Petersburg 13
Brandenburg 12
Dong Ket 12
Naples 11
Assago 10
Padova 9
Gelsenkirchen 8
New Delhi 8
Saint Petersburg 8
Shanghai 8
Staten Island 8
Ankara 7
Luxembourg 7
Norwalk 7
Philadelphia 7
Quito 7
Bexley 6
Bremen 6
Haiphong 6
Totale 11.803
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Nome #
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.028
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 191
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 189
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 186
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 184
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 179
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 179
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 173
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 170
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 166
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 165
Cosmic ray effects on power MOSFET 164
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 164
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 161
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 160
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 159
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 156
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 156
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 156
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 156
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 155
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 155
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 154
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 153
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 152
Perspective Performances of MOS-Gated GTO in High-Power Applications 152
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 152
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 151
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 150
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 150
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 149
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 147
Developments on DC/DC converters for the LHC experiment upgrades 147
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 146
An Electrical Technique for the Measurement of the Surface Recombination Velocity 146
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 145
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 145
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 145
Experimental measurement of recombination lifetime in proton irradiated power devices 145
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 144
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 143
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 142
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 141
Experimental study of power MOSFET’s gate damage in radiation environment 141
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 139
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 138
Modelling of the Input Characteristics of Bipolar JFET Structures 138
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 137
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 137
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 137
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 136
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 135
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 135
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 134
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 133
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 133
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 132
Recombination lifetime measurements in silicon wafers 132
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 131
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 131
Recombination Lifetime Measurements in Silicon 131
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 130
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 130
Power converters for future LHC experiments 130
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 130
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 129
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 129
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 129
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 127
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 127
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 126
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 126
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 125
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 125
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 124
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 124
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 124
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 123
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 123
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 122
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 121
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 121
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 121
Novel Selective, Emitter Solar Cell Based on N-Type mc_Si 121
Plasma dry etching for selective emitter formation in crystalline silicon based solar cell 121
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 121
Thermal damage in SiC Schottky diodes induced by SE heavy ions 120
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 119
Performances of MOS-Gated GTO in High Voltage Power Applications 119
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 119
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 117
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 116
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 116
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 116
Design and realization of a 200 A low-cost high-side switch for automotive applications 114
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique 114
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 112
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 111
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 111
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD 108
Totale 15.822
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Categoria #
all - tutte 74.027
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.027
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022869 0 0 0 60 50 4 32 74 230 5 149 265
2022/20233.748 268 350 160 254 224 691 2 214 1.472 10 55 48
2023/2024678 64 37 43 22 23 113 83 74 107 8 2 102
2024/20251.852 66 52 133 44 175 18 230 104 632 15 241 142
2025/20265.786 311 635 145 395 568 432 539 127 158 2.244 191 41
2026/20271.350 278 202 355 515 0 0 0 0 0 0 0 0
Totale 17.646