SANSEVERINO, Annunziata
SANSEVERINO, Annunziata
Dipartimento di Ingegneria Elettrica e dell'Informazione "Maurizio Scarano"
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET
2008-01-01 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET
2008-01-01 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency
2002-01-01 S., Daliento; Sanseverino, Annunziata; M., Izzi; L., Pirozzi
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit
1999-01-01 S., Bellone; S., Daliento; Sanseverino, Annunziata
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials
1998-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs
2011-01-01 Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments
2002-01-01 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers
1998-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito; G. F., Vitale; L, Zeni
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs
2007-01-01 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies
2021-01-01 Marciano, D.; Palazzo, S.; Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F.
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon
1998-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito
A Simple and Low Cost Overcurrent Protection System Based on Commercial Shunt for Wide-Bandgap Devices
2024-01-01 Martano, Emanuele; Pascal, Yoann; Liserre, Marco; Busatto, Giovanni; Sanseverino, Annunziata
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit
2024-01-01 Palazzo, S.; Sanseverino, A.; Canale Parola, G.; Martano, E.; Velardi, F.; Busatto, G.
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes
1999-01-01 S., Bellone; S., Daliento; Sanseverino, Annunziata
A time-resolved IBICC experiment using the IEEM of the SIRAD facility
2012-01-01 L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization
2021-01-01 Abbate, C.; Colella, L.; Di Folco, R.; Busatto, G.; Martano, E.; Palazzo, S.; Sanseverino, A.; Velardi, F.
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure
2003-01-01 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure
2002-01-01 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
An Electrical Technique for the Measurement of the Surface Recombination Velocity
2002-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito; G., Contento; N., Martucciello; I., Nasti; F., Roca
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET | 1-gen-2008 | A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò | |
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET | 1-gen-2008 | A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò | |
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency | 1-gen-2002 | S., Daliento; Sanseverino, Annunziata; M., Izzi; L., Pirozzi | |
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit | 1-gen-1999 | S., Bellone; S., Daliento; Sanseverino, Annunziata | |
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials | 1-gen-1998 | S., Daliento; Sanseverino, Annunziata; P., Spirito | |
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs | 1-gen-2011 | Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery | |
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments | 1-gen-2002 | S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito | |
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers | 1-gen-1998 | S., Daliento; Sanseverino, Annunziata; P., Spirito; G. F., Vitale; L, Zeni | |
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs | 1-gen-2007 | Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina | |
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies | 1-gen-2021 | Marciano, D.; Palazzo, S.; Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. | |
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon | 1-gen-1998 | S., Daliento; Sanseverino, Annunziata; P., Spirito | |
A Simple and Low Cost Overcurrent Protection System Based on Commercial Shunt for Wide-Bandgap Devices | 1-gen-2024 | Martano, Emanuele; Pascal, Yoann; Liserre, Marco; Busatto, Giovanni; Sanseverino, Annunziata | |
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit | 1-gen-2024 | Palazzo, S.; Sanseverino, A.; Canale Parola, G.; Martano, E.; Velardi, F.; Busatto, G. | |
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes | 1-gen-1999 | S., Bellone; S., Daliento; Sanseverino, Annunziata | |
A time-resolved IBICC experiment using the IEEM of the SIRAD facility | 1-gen-2012 | L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery | |
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization | 1-gen-2021 | Abbate, C.; Colella, L.; Di Folco, R.; Busatto, G.; Martano, E.; Palazzo, S.; Sanseverino, A.; Velardi, F. | |
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure | 1-gen-2003 | S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito | |
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure | 1-gen-2002 | S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito | |
An Electrical Technique for the Measurement of the Surface Recombination Velocity | 1-gen-2002 | S., Daliento; Sanseverino, Annunziata; P., Spirito; G., Contento; N., Martucciello; I., Nasti; F., Roca | |
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata |