SANSEVERINO, Annunziata

SANSEVERINO, Annunziata  

Dipartimento di Ingegneria Elettrica e dell'Informazione "Maurizio Scarano"  

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Risultati 1 - 20 di 110 (tempo di esecuzione: 0.007 secondi).
Titolo Data di pubblicazione Autore(i) File
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 1-gen-2008 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 1-gen-2008 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 1-gen-2002 S., Daliento; Sanseverino, Annunziata; M., Izzi; L., Pirozzi
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 1-gen-1999 S., Bellone; S., Daliento; Sanseverino, Annunziata
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 1-gen-1998 S., Daliento; Sanseverino, Annunziata; P., Spirito
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 1-gen-2011 Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 1-gen-2002 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 1-gen-1998 S., Daliento; Sanseverino, Annunziata; P., Spirito; G. F., Vitale; L, Zeni
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 1-gen-2007 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 1-gen-1998 S., Daliento; Sanseverino, Annunziata; P., Spirito
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 1-gen-1999 S., Bellone; S., Daliento; Sanseverino, Annunziata
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 1-gen-2012 L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 1-gen-2021 Abbate, C.; Colella, L.; Di Folco, R.; Busatto, G.; Martano, E.; Palazzo, S.; Sanseverino, A.; Velardi, F.
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 1-gen-2002 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 1-gen-2003 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
An Electrical Technique for the Measurement of the Surface Recombination Velocity 1-gen-2002 S., Daliento; Sanseverino, Annunziata; P., Spirito; G., Contento; N., Martucciello; I., Nasti; F., Roca
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 1-gen-2002 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 1-gen-1999 S., Daliento; Sanseverino, Annunziata; P., Spirito
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 1-gen-1999 S., Daliento; Sanseverino, Annunziata; P., Spirito
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 1-gen-1998 A., Cutolo; S., Daliento; Sanseverino, Annunziata; G. F., Vitale