The Ion Electron Emission Microscope (IEEM) of the SIRAD irradiation facility at LNL (Legnaro, Italy) has been used to perform an Ion Beam Induced Charge Collection (IBICC) type experiment irradiating a power MOSFET device with 223 MeV 79Br ions. The ion-induced drain current pulse signals at different bias conditions were correlated with the ion impacts reconstructed by the IEEM to disentangle, with micrometric resolution, regions of the device with different sensitivity to the impinging ions.

A time-resolved IBICC experiment using the IEEM of the SIRAD facility

BUSATTO, Giovanni;IANNUZZO, Francesco;SANSEVERINO, Annunziata;VELARDI, Francesco;WYSS, JEFFERY
2012-01-01

Abstract

The Ion Electron Emission Microscope (IEEM) of the SIRAD irradiation facility at LNL (Legnaro, Italy) has been used to perform an Ion Beam Induced Charge Collection (IBICC) type experiment irradiating a power MOSFET device with 223 MeV 79Br ions. The ion-induced drain current pulse signals at different bias conditions were correlated with the ion impacts reconstructed by the IEEM to disentangle, with micrometric resolution, regions of the device with different sensitivity to the impinging ions.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11580/20033
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
social impact