In this brief, we present the experimental and simulated characteristics of a new power semiconductor device called MOS-gated thyristor (MOS-GTO) for high-power applications. The results are presented for a 1.2-kV device and subsequently scaled up to 4.5-kV blocking voltage. The excellent ON-state voltage and switching characteristics makeMOS-GTO a very promising device for high-voltage power applications.
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Titolo: | Perspective Performances of MOS-Gated GTO in High-Power Applications |
Autori: | |
Data di pubblicazione: | 2010 |
Rivista: | |
Abstract: | In this brief, we present the experimental and simulated characteristics of a new power semiconductor device called MOS-gated thyristor (MOS-GTO) for high-power applications. The results are presented for a 1.2-kV device and subsequently scaled up to 4.5-kV blocking voltage. The excellent ON-state voltage and switching characteristics makeMOS-GTO a very promising device for high-voltage power applications. |
Handle: | http://hdl.handle.net/11580/13910 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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