Perspective Performances of MOS-Gated GTO in High-Power Applications

In this brief, we present the experimental and simulated characteristics of a new power semiconductor device called MOS-gated thyristor (MOS-GTO) for high-power applications. The results are presented for a 1.2-kV device and subsequently scaled up to 4.5-kV blocking voltage. The excellent ON-state voltage and switching characteristics makeMOS-GTO a very promising device for high-voltage power applications.



Titolo: Perspective Performances of MOS-Gated GTO in High-Power Applications
Autori: 
ABBATE, Carmine
BUSATTO, Giovanni
SANSEVERINO, Annunziata
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Data di pubblicazione: 2010
Rivista: 
IEEE TRANSACTIONS ON ELECTRON DEVICES  
Abstract: In this brief, we present the experimental and simulated characteristics of a new power semiconductor device called MOS-gated thyristor (MOS-GTO) for high-power applications. The results are presented for a 1.2-kV device and subsequently scaled up to 4.5-kV blocking voltage. The excellent ON-state voltage and switching characteristics makeMOS-GTO a very promising device for high-voltage power applications.
Handle: http://hdl.handle.net/11580/13910
Appare nelle tipologie:1.1 Articolo in rivista

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http://hdl.handle.net/11580/13910
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