In this paper we present an experimental study of the gate damage exhibited by commercial n-channel power MOSFETs during ion exposure. The investigation has been performed in different bias conditions showing a strongly non linear relationship between the bias voltages at which the gate damage occurred. In addition, the gate damage observed at VGS=0V is quite dissimilar from what observed at negative gate-source voltages. In facts, at low gatesource voltage bias the gate damage mechanism progressively appears like a cumulative effect, while at higher voltage bias an abrupt gate damage reveals a typical single event effect.
Experimental study of power MOSFET’s gate damage in radiation environment
BUSATTO, Giovanni;IANNUZZO, Francesco;SANSEVERINO, Annunziata;VELARDI, Francesco;
2006-01-01
Abstract
In this paper we present an experimental study of the gate damage exhibited by commercial n-channel power MOSFETs during ion exposure. The investigation has been performed in different bias conditions showing a strongly non linear relationship between the bias voltages at which the gate damage occurred. In addition, the gate damage observed at VGS=0V is quite dissimilar from what observed at negative gate-source voltages. In facts, at low gatesource voltage bias the gate damage mechanism progressively appears like a cumulative effect, while at higher voltage bias an abrupt gate damage reveals a typical single event effect.File in questo prodotto:
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