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EnglishIn this paper we present an experimental study of the gate damage exhibited by commercial n-channel power MOSFETs during ion exposure. The investigation has been performed in different bias conditions showing a strongly non linear relationship between the bias voltages at which the gate damage occurred. In addition, the gate damage observed at VGS=0V is quite dissimilar from what observed at negative gate-source voltages. In facts, at low gatesource voltage bias the gate damage mechanism progressively appears like a cumulative effect, while at higher voltage bias an abrupt gate damage reveals a typical single event effect.
| Titolo: | Experimental study of power MOSFET’s gate damage in radiation environment |
| Autori: | |
| Data di pubblicazione: | 2006 |
| Rivista: | |
| Abstract: | In this paper we present an experimental study of the gate damage exhibited by commercial n-channel power MOSFETs during ion exposure. The investigation has been performed in different bias conditions showing a strongly non linear relationship between the bias voltages at which the gate damage occurred. In addition, the gate damage observed at VGS=0V is quite dissimilar from what observed at negative gate-source voltages. In facts, at low gatesource voltage bias the gate damage mechanism progressively appears like a cumulative effect, while at higher voltage bias an abrupt gate damage reveals a typical single event effect. |
| Handle: | http://hdl.handle.net/11580/5541 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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