In this paper we present the results of an experimental work aimed to study the formation of “gate oxide damages” in patterned MOS capacitors during heavy ion irradiation. The samples under test are derived from 100V power MOSFETs. The damages on these structures have the same nature of the corresponding MOSFET but can be much more easily characterized. The gate damages resulting from both 79Br and 197Au ion irradiations are presented for different test conditions.
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions
BUSATTO, Giovanni;IANNUZZO, Francesco;SANSEVERINO, Annunziata;VELARDI, Francesco
2009-01-01
Abstract
In this paper we present the results of an experimental work aimed to study the formation of “gate oxide damages” in patterned MOS capacitors during heavy ion irradiation. The samples under test are derived from 100V power MOSFETs. The damages on these structures have the same nature of the corresponding MOSFET but can be much more easily characterized. The gate damages resulting from both 79Br and 197Au ion irradiations are presented for different test conditions.File in questo prodotto:
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