In this paper we present the results of an experimental work aimed to study the formation of “gate oxide damages” in patterned MOS capacitors during heavy ion irradiation. The samples under test are derived from 100V power MOSFETs. The damages on these structures have the same nature of the corresponding MOSFET but can be much more easily characterized. The gate damages resulting from both 79Br and 197Au ion irradiations are presented for different test conditions.

Experimental Study about Gate Oxide Damages in Patterned MOS Capacitor Irradiated with Heavy Ions

BUSATTO, Giovanni;IANNUZZO, Francesco;SANSEVERINO, Annunziata;VELARDI, Francesco
2009

Abstract

In this paper we present the results of an experimental work aimed to study the formation of “gate oxide damages” in patterned MOS capacitors during heavy ion irradiation. The samples under test are derived from 100V power MOSFETs. The damages on these structures have the same nature of the corresponding MOSFET but can be much more easily characterized. The gate damages resulting from both 79Br and 197Au ion irradiations are presented for different test conditions.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11580/13226
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
social impact