The Ion Electron Emission Microscope (IEEM) of the SIRAD irradiation facility at LNL (Legnaro, Italy) has been used to perform an Ion Beam Induced Charge Collection (IBICC) type experiment irradiating a power MOSFET device with 223 MeV 79Br ions. The ion-induced drain current pulse signals at different bias conditions were correlated with the ion impacts reconstructed by the IEEM to disentangle, with micrometric resolution, regions of the device with different sensitivity to the impinging ions.
Power converters for future LHC experiments
IANNUZZO, Francesco;SANSEVERINO, Annunziata;BUSATTO, Giovanni;DE LUCA, Valentina;VELARDI, Francesco
2012-01-01
Abstract
The Ion Electron Emission Microscope (IEEM) of the SIRAD irradiation facility at LNL (Legnaro, Italy) has been used to perform an Ion Beam Induced Charge Collection (IBICC) type experiment irradiating a power MOSFET device with 223 MeV 79Br ions. The ion-induced drain current pulse signals at different bias conditions were correlated with the ion impacts reconstructed by the IEEM to disentangle, with micrometric resolution, regions of the device with different sensitivity to the impinging ions.File in questo prodotto:
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