SANSEVERINO, Annunziata
 Distribuzione geografica
Continente #
EU - Europa 345
AS - Asia 202
NA - Nord America 86
AF - Africa 10
OC - Oceania 5
SA - Sud America 2
Totale 650
Nazione #
IT - Italia 195
US - Stati Uniti d'America 76
TW - Taiwan 42
IN - India 32
DE - Germania 29
IE - Irlanda 23
CN - Cina 19
HK - Hong Kong 19
TR - Turchia 14
JP - Giappone 13
FR - Francia 12
IR - Iran 11
KR - Corea 11
EG - Egitto 9
GB - Regno Unito 9
ID - Indonesia 9
NL - Olanda 9
PL - Polonia 9
CA - Canada 8
IL - Israele 8
BG - Bulgaria 7
AT - Austria 6
BE - Belgio 6
HR - Croazia 6
SE - Svezia 6
SG - Singapore 6
UA - Ucraina 6
CZ - Repubblica Ceca 5
AU - Australia 4
TH - Thailandia 4
HU - Ungheria 3
LV - Lettonia 3
PK - Pakistan 3
VN - Vietnam 3
EE - Estonia 2
KZ - Kazakistan 2
MM - Myanmar 2
MX - Messico 2
NO - Norvegia 2
PE - Perù 2
QA - Qatar 2
RO - Romania 2
RU - Federazione Russa 2
CH - Svizzera 1
JO - Giordania 1
NZ - Nuova Zelanda 1
RS - Serbia 1
SI - Slovenia 1
UZ - Uzbekistan 1
ZW - Zimbabwe 1
Totale 650
Città #
Milan 34
Dublin 23
Cassino 22
Taipei 18
Taglio di Po 12
Bari 10
Ashburn 9
Cairo 8
Guangzhou 8
Bandung 7
Bologna 7
Coimbatore 7
Columbus 7
New York 7
Central 6
Istanbul 6
Mandello del Lario 6
New Taipei 6
Paris 6
Passirano 6
Rome 6
Tokyo 6
Frankfurt am Main 5
Los Angeles 5
Turin 5
Yambol 5
Begijnendijk 4
Bengaluru 4
Brooklyn 4
Cesena 4
Novi 4
Sant'Elia Fiumerapido 4
Taichung 4
Tehran 4
Vienna 4
Warsaw 4
Carate Brianza 3
Catania 3
Chon Buri 3
Hong Kong 3
Hsinchu 3
Imola 3
Motta di Livenza 3
Mumbai 3
Riga 3
Singapore 3
Songpa-gu 3
Tekirdağ 3
Zagreb 3
Zhubei 3
Arcene 2
Berlin 2
Bochum 2
Busto Arsizio 2
Chandler 2
Changsha 2
Chernihiv 2
Chicago 2
Cieszyn 2
Corona 2
Council Bluffs 2
Doha 2
Ferrara 2
Florence 2
Gangnam-gu 2
Gatineau 2
Gelsenkirchen 2
Gothenburg 2
Haarlem 2
Hanoi 2
Herndon 2
Hsinchu County 2
Hyderabad 2
Ibaraki 2
Islamabad 2
Isleworth 2
Itri 2
Jakarta 2
Kochi 2
Kongsberg 2
Krakow 2
Kwun Hang 2
La Spezia 2
Lima 2
Minturno 2
Modena 2
Naples 2
Ofakim 2
Osijek 2
Palermo 2
Pavia 2
Perth 2
Perugia 2
Pisogne 2
Portsmouth 2
Ravenna 2
Saint-Germain-en-Laye 2
Salzburg 2
Seocho-gu 2
Shatin 2
Totale 429
Nome #
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives, file c9398879-7a1e-4b83-b430-47a6aae6cf3a 575
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization, file e9732e0f-ab63-4c52-9e1e-52df05bd11d6 34
Design and realization of a 200 A low-cost high-side switch for automotive applications, file 6aa33961-283f-4e1a-b8f6-ed9c268f1f88 5
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET, file de2a6152-fe52-86a2-e053-1705fe0a3017 5
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs, file de2a6152-feac-86a2-e053-1705fe0a3017 4
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT, file de2a6153-2562-86a2-e053-1705fe0a3017 3
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments, file de2a6153-95b9-86a2-e053-1705fe0a3017 3
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions, file de2a6152-fe6b-86a2-e053-1705fe0a3017 2
Reliability oriented design of power supplies for high energy physics applications, file de2a6153-057c-86a2-e053-1705fe0a3017 2
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure, file de2a6153-05c8-86a2-e053-1705fe0a3017 2
null, file de2a6153-8f5d-86a2-e053-1705fe0a3017 2
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET, file de2a6154-0706-86a2-e053-1705fe0a3017 2
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies, file 0b392f6c-4423-4c25-8019-40665abcfe4c 1
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation, file a08d4063-d960-434e-8a5a-05e35a800351 1
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications, file c15b62a0-c6c5-4e41-8065-5c9b61fee754 1
Characterization of Recombination Centers in Si Epilayers after He Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique, file de2a6152-f8ce-86a2-e053-1705fe0a3017 1
A time-resolved IBICC experiment using the IEEM of the SIRAD facility, file de2a6153-010c-86a2-e053-1705fe0a3017 1
Electrical measurement of the lattice damage induced by a-particle implantation in silicon, file de2a6153-01b9-86a2-e053-1705fe0a3017 1
Power converters for future LHC experiments, file de2a6153-05ca-86a2-e053-1705fe0a3017 1
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes, file de2a6153-327b-86a2-e053-1705fe0a3017 1
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit, file de2a6153-8f62-86a2-e053-1705fe0a3017 1
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET, file de2a6154-016a-86a2-e053-1705fe0a3017 1
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit, file de2a6154-293a-86a2-e053-1705fe0a3017 1
Totale 650
Categoria #
all - tutte 1.000
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.000


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212 0 0 0 0 0 0 0 0 2 0 0 0
2022/2023262 0 0 0 3 33 44 17 45 53 17 18 32
2023/2024380 36 30 54 52 32 32 48 28 26 26 16 0
Totale 650