In this paper we present an experimental study aimed to identify the test conditions at which latent damages are created for different ion species with different energy losses both in the oxide and in the silicon. Moreover, with the help of 3-D finite element simulation, we give an interpretation for explaining the role played by the charge generated during the ion strike in starting the creation of the latent damage and in defining its amount.

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

BUSATTO, Giovanni;IANNUZZO, Francesco;SANSEVERINO, Annunziata;VELARDI, Francesco
2010

Abstract

In this paper we present an experimental study aimed to identify the test conditions at which latent damages are created for different ion species with different energy losses both in the oxide and in the silicon. Moreover, with the help of 3-D finite element simulation, we give an interpretation for explaining the role played by the charge generated during the ion strike in starting the creation of the latent damage and in defining its amount.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11580/13904
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