Starting from a physical model of the electric field that develops in the gate oxide during heavy-ion irradiation, we have experimentally and numerically investigated the single event gate damage observed in medium voltage power MOSFETs. Simulation results reveal that the total electric field reached during the heavy-ion impact is close to the one that is known to trigger the formation of latent damages during electro-static discharge (ESD) experiments.

Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs

BUSATTO, Giovanni;IANNUZZO, Francesco;SANSEVERINO, Annunziata;VELARDI, Francesco
2009

Abstract

Starting from a physical model of the electric field that develops in the gate oxide during heavy-ion irradiation, we have experimentally and numerically investigated the single event gate damage observed in medium voltage power MOSFETs. Simulation results reveal that the total electric field reached during the heavy-ion impact is close to the one that is known to trigger the formation of latent damages during electro-static discharge (ESD) experiments.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11580/13228
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