IRIS
IANNUZZO, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 5.678
NA - Nord America 4.518
AS - Asia 2.024
Continente sconosciuto - Info sul continente non disponibili 21
SA - Sud America 11
OC - Oceania 8
AF - Africa 1
Totale 12.261
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Nazione #
US - Stati Uniti d'America 4.501
IE - Irlanda 1.793
SE - Svezia 1.143
CN - Cina 1.139
UA - Ucraina 825
DE - Germania 822
IT - Italia 559
TR - Turchia 457
SG - Singapore 262
FI - Finlandia 181
GB - Regno Unito 171
IN - India 137
FR - Francia 55
BE - Belgio 38
NL - Olanda 30
EU - Europa 21
RU - Federazione Russa 16
CA - Canada 13
DK - Danimarca 13
AT - Austria 10
AU - Australia 8
HK - Hong Kong 5
KR - Corea 5
TW - Taiwan 5
CL - Cile 4
LU - Lussemburgo 4
PL - Polonia 4
RO - Romania 4
SK - Slovacchia (Repubblica Slovacca) 4
VN - Vietnam 4
BR - Brasile 3
PA - Panama 3
SA - Arabia Saudita 3
HU - Ungheria 2
ID - Indonesia 2
KG - Kirghizistan 2
KW - Kuwait 2
AM - Armenia 1
AR - Argentina 1
BY - Bielorussia 1
CO - Colombia 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
EG - Egitto 1
ES - Italia 1
IM - Isola di Man 1
JM - Giamaica 1
PE - Perù 1
Totale 12.261
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Città #
Dublin 1.793
Chandler 1.147
Jacksonville 586
Izmir 439
Rome 426
Nanjing 365
Boardman 262
Singapore 184
Lawrence 161
Princeton 161
Nanchang 143
Ann Arbor 142
Wilmington 130
Beijing 117
Woodbridge 117
Dearborn 113
Ashburn 111
Brooklyn 102
Ogden 102
Los Angeles 68
Shenyang 66
Grafing 65
Pune 65
Tianjin 64
Changsha 63
Kunming 62
Des Moines 56
Hebei 54
New York 53
Seattle 51
Inglewood 49
Jiaxing 46
Cassino 39
Brussels 38
West Jordan 38
Orange 37
Milan 36
Santa Clara 33
Helsinki 31
Brandenburg 27
Changchun 25
Hangzhou 24
Lanzhou 20
Shanghai 20
Auburn Hills 19
Naaldwijk 17
Verona 16
Gelsenkirchen 14
San Francisco 14
San Mateo 14
Kocaeli 13
Munich 13
Toronto 13
Norwalk 12
Jinan 11
Staten Island 10
Vienna 10
Zhengzhou 10
Saint Petersburg 8
Walnut 8
Bremen 7
Dronten 7
Ningbo 6
Falls Church 5
Hefei 5
Naples 5
Tappahannock 5
Bratislava 4
Haikou 4
Luxembourg 4
Padova 4
Redwood City 4
Shaoxing 4
Taizhou 4
Warsaw 4
Fuzhou 3
Grugliasco 3
Guangzhou 3
Hsinchu 3
Hyderabad 3
Melbourne 3
Redmond 3
Seveso 3
Shenzhen 3
Amsterdam 2
Bishkek 2
Catania 2
Chandigarh 2
Dong Ket 2
Hanoi 2
Kuwait City 2
Lecco 2
London 2
Mainhausen 2
Parma 2
Riyadh 2
Strasbourg 2
Støvring 2
Sydney 2
Vittorio Veneto 2
Totale 8.064
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Nome #
The high frequency behaviour of high voltage and current IGBT modules 111
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 109
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 107
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 105
EMI Analysis in High power Converters for Traction Application 102
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 102
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 101
A general methodology for circuit simulation of high-voltage power devices 100
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 100
A lumped charge model for GTOs suitable for circuit simulation 100
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 98
Comparison among eligible topologies for MARX klystron modulators 98
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 97
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 97
Effects of heavy ion impact on power diodes 96
PSPICE model for GTOs 96
Non-destructive tester for single event burnout of power diodes 96
MAGFET Based Current Sensing for Power Integrated Circuit 96
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 96
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 95
An On-Chip Non Invasive Integrated Current Sensing 95
Driving optimization of high voltage IGBT modules for traction application 95
Cosmic ray effects on power MOSFET 94
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 94
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 94
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 94
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 94
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 93
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 92
EMI Characterisation of high power IGBT modules For Traction Application 92
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 92
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 92
Series Connection of High Power IGBT modules for traction applications 91
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 91
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 90
The robustness of series-connected high power IGBT modules 90
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 90
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 89
IGBT RBSOA non-destructive testing methods: Analysis and discussion 89
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 88
Investigation of MOSFET failure in soft-switching conditions 88
High Voltage, High Performance Switch using Series Connected IGBTs 87
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 87
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs 87
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 87
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 87
The Reliability of New Generation Power MOSFETs in Radiation Environment 87
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 86
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 86
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 86
A circuit model for GTOs based on lumped charge approach 86
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 86
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 85
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 85
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 85
Una antenna Uda-Yagi adattativa utilizzante un algoritmo particle swarm con particelle a dinamica variabile 84
Experimental study of power MOSFET’s gate damage in radiation environment 84
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 83
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 83
IGBT Modules Robustness During Turn-Off Commutation 83
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 83
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 83
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 83
Developments on DC/DC converters for the LHC experiment upgrades 83
null 82
Non Destructive SOA Testing of Power Modules (Invited) 82
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 82
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 82
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 82
A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules 82
Innovative driving strategies for new generation high power igbt modules 81
Operation of SiC normally-off JFET at the edges of its safe operating area 81
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 81
Thermal damage in SiC Schottky diodes induced by SE heavy ions 81
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 81
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 81
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 80
null 80
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 80
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 80
Power converters for future LHC experiments 79
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 79
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode 78
null 78
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 78
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations 78
Approaching repetitive short circuit tests on MW-scale power modules by means of an automatic testing setup 78
Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters 78
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 77
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 77
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations 77
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 77
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 77
Wire bond degradation under thermo- and pure mechanical loading 77
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 77
Junction temperature estimation method for a 600V, 30A IGBT module during converter operation 75
IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current 75
Lumped Charge PSPICE Model for High–Voltage IGBTs 75
Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester 74
An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit 74
Totale 8.721
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Categoria #
all - tutte 56.862
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.862
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020824 0 0 0 0 11 266 90 175 47 47 185 3
2020/20211.343 171 3 167 173 2 225 7 162 1 187 62 183
2021/20221.320 13 1 18 81 77 8 70 95 320 2 211 424
2022/20235.011 327 392 208 335 295 972 0 252 2.076 7 77 70
2023/2024856 80 52 36 31 24 112 126 78 155 52 0 110
2024/2025534 89 56 176 15 198 0 0 0 0 0 0 0
Totale 12.767