IRIS
IANNUZZO, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 36.416
NA - Nord America 7.287
AS - Asia 4.390
SA - Sud America 180
AF - Africa 47
Continente sconosciuto - Info sul continente non disponibili 21
OC - Oceania 11
Totale 48.352
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Nazione #
SE - Svezia 30.864
US - Stati Uniti d'America 7.188
IE - Irlanda 1.795
CN - Cina 1.757
SG - Singapore 1.296
DE - Germania 883
UA - Ucraina 831
RU - Federazione Russa 716
IT - Italia 611
TR - Turchia 465
HK - Hong Kong 340
GB - Regno Unito 250
IN - India 218
FI - Finlandia 193
VN - Vietnam 121
BR - Brasile 119
FR - Francia 78
BD - Bangladesh 69
CA - Canada 51
NL - Olanda 47
BE - Belgio 41
PL - Polonia 36
MX - Messico 34
JP - Giappone 27
EU - Europa 21
AR - Argentina 20
ZA - Sudafrica 18
ES - Italia 16
DK - Danimarca 13
AT - Austria 12
IQ - Iraq 11
VE - Venezuela 11
AU - Australia 10
EC - Ecuador 9
MY - Malesia 9
UZ - Uzbekistan 9
MA - Marocco 8
SA - Arabia Saudita 8
CL - Cile 7
LT - Lituania 7
PK - Pakistan 7
CO - Colombia 6
ID - Indonesia 6
EG - Egitto 5
KR - Corea 5
RO - Romania 5
TN - Tunisia 5
TW - Taiwan 5
JM - Giamaica 4
KZ - Kazakistan 4
LU - Lussemburgo 4
PA - Panama 4
SK - Slovacchia (Repubblica Slovacca) 4
AZ - Azerbaigian 3
DZ - Algeria 3
ET - Etiopia 3
HU - Ungheria 3
IL - Israele 3
JO - Giordania 3
KE - Kenya 3
KW - Kuwait 3
NP - Nepal 3
PE - Perù 3
PY - Paraguay 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
GE - Georgia 2
GT - Guatemala 2
KG - Kirghizistan 2
OM - Oman 2
PH - Filippine 2
UY - Uruguay 2
AL - Albania 1
BY - Bielorussia 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EE - Estonia 1
GA - Gabon 1
GR - Grecia 1
IM - Isola di Man 1
LB - Libano 1
LK - Sri Lanka 1
MK - Macedonia 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
TH - Thailandia 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
UG - Uganda 1
Totale 48.352
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Città #
Stockholm 29.722
Dublin 1.795
Chandler 1.148
Singapore 746
Jacksonville 587
San Jose 550
The Dalles 518
Ashburn 493
Izmir 439
Rome 431
Nanjing 365
Dallas 364
Hong Kong 334
Boardman 279
Beijing 259
Council Bluffs 182
Hefei 168
Lawrence 161
Princeton 161
Nanchang 143
Ann Arbor 142
Los Angeles 133
Wilmington 130
Brooklyn 122
New York 120
Moscow 119
Woodbridge 117
Dearborn 113
Ogden 102
Santa Clara 67
Shenyang 66
Grafing 65
Pune 65
Tianjin 64
Changsha 63
Kunming 62
Des Moines 61
Seattle 55
Hebei 54
Inglewood 50
Jiaxing 46
Munich 46
Brussels 41
Milan 41
Cassino 39
Orem 39
West Jordan 38
Orange 37
Hanoi 36
Helsinki 32
Warsaw 30
Mumbai 28
Brandenburg 27
Ho Chi Minh City 27
Denver 26
Changchun 25
Tokyo 25
Hangzhou 24
São Paulo 24
Shanghai 22
San Francisco 21
Toronto 21
Atlanta 20
Frankfurt am Main 20
Lanzhou 20
Auburn Hills 19
Verona 18
Chennai 17
Houston 17
Mexico City 17
Naaldwijk 17
Manchester 16
Poplar 16
London 15
Montreal 15
Amsterdam 14
Boston 14
Gelsenkirchen 14
Johannesburg 14
San Mateo 14
Kocaeli 13
St Petersburg 13
Norwalk 12
Jinan 11
Phoenix 11
Turku 11
Vienna 11
Chicago 10
New Delhi 10
Staten Island 10
Zhengzhou 10
Haiphong 8
Saint Petersburg 8
Walnut 8
Bexley 7
Bremen 7
Dronten 7
Naples 7
Querétaro 7
Tashkent 7
Totale 41.795
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Nome #
EMI Analysis in High power Converters for Traction Application 2.036
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.027
Driving optimization of high voltage IGBT modules for traction application 2.025
The high frequency behaviour of high voltage and current IGBT modules 2.025
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.014
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.012
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.009
EMI Characterisation of high power IGBT modules For Traction Application 2.004
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 1.997
IGBT Modules Robustness During Turn-Off Commutation 1.995
Series Connection of High Power IGBT modules for traction applications 1.990
High Voltage, High Performance Switch using Series Connected IGBTs 1.985
The robustness of series-connected high power IGBT modules 1.984
Experimental characterisation of high efficiency resonant gate driver circuit 1.978
Investigation of MOSFET failure in soft-switching conditions 1.976
Innovative driving strategies for new generation high power igbt modules 1.969
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 176
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 175
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 171
A lumped charge model for GTOs suitable for circuit simulation 164
Comparison among eligible topologies for MARX klystron modulators 164
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 164
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 162
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 161
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 160
A general methodology for circuit simulation of high-voltage power devices 159
An On-Chip Non Invasive Integrated Current Sensing 157
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 157
A circuit model for GTOs based on lumped charge approach 157
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 156
Cosmic ray effects on power MOSFET 151
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 149
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 148
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 147
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs 145
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 145
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 144
Effects of heavy ion impact on power diodes 143
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 143
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 143
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations 139
Non-destructive tester for single event burnout of power diodes 138
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 138
Developments on DC/DC converters for the LHC experiment upgrades 137
PSPICE model for GTOs 136
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 136
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 135
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 135
IGBT RBSOA non-destructive testing methods: Analysis and discussion 134
MAGFET Based Current Sensing for Power Integrated Circuit 133
Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction 133
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 133
A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations 131
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 130
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 130
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 129
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 129
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 129
An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit 128
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 127
Online junction temperature measurement using peak gate current 127
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 127
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 126
A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules 125
Operation of SiC normally-off JFET at the edges of its safe operating area 124
The Reliability of New Generation Power MOSFETs in Radiation Environment 123
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 122
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 122
Power converters for future LHC experiments 122
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 122
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 121
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 121
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 121
Non Destructive SOA Testing of Power Modules (Invited) 121
Experimental study of power MOSFET’s gate damage in radiation environment 121
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 120
Una antenna Uda-Yagi adattativa utilizzante un algoritmo particle swarm con particelle a dinamica variabile 119
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 117
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 117
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 116
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 116
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 116
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 114
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 114
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 114
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 114
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 113
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 112
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 112
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 111
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 111
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 110
Thermal damage in SiC Schottky diodes induced by SE heavy ions 110
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations 109
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 109
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode 108
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 107
Wire bond degradation under thermo- and pure mechanical loading 107
Approaching repetitive short circuit tests on MW-scale power modules by means of an automatic testing setup 105
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 105
Totale 43.078
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Categoria #
all - tutte 118.748
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 118.748
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021183 0 0 0 0 0 0 0 0 0 0 0 183
2021/20221.320 13 1 18 81 77 8 70 95 320 2 211 424
2022/20235.011 327 392 208 335 295 972 0 252 2.076 7 77 70
2023/2024856 80 52 36 31 24 112 126 78 155 52 0 110
2024/20252.361 89 56 176 15 218 7 255 136 810 74 357 168
2025/202634.267 323 816 151 335 585 505 748 143 611 29.655 285 110
Totale 48.861