IRIS
IANNUZZO, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 5.633
NA - Nord America 4.200
AS - Asia 1.868
Continente sconosciuto - Info sul continente non disponibili 21
SA - Sud America 9
OC - Oceania 8
AF - Africa 1
Totale 11.740
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Nazione #
US - Stati Uniti d'America 4.183
IE - Irlanda 1.792
SE - Svezia 1.142
CN - Cina 1.136
UA - Ucraina 823
DE - Germania 809
IT - Italia 550
TR - Turchia 457
GB - Regno Unito 169
FI - Finlandia 167
IN - India 137
SG - Singapore 113
FR - Francia 54
BE - Belgio 38
NL - Olanda 29
EU - Europa 21
RU - Federazione Russa 16
CA - Canada 13
DK - Danimarca 13
AT - Austria 9
AU - Australia 8
KR - Corea 5
TW - Taiwan 5
CL - Cile 4
HK - Hong Kong 4
LU - Lussemburgo 4
PL - Polonia 4
RO - Romania 4
SK - Slovacchia (Repubblica Slovacca) 4
VN - Vietnam 4
PA - Panama 3
BR - Brasile 2
HU - Ungheria 2
ID - Indonesia 2
KW - Kuwait 2
SA - Arabia Saudita 2
AM - Armenia 1
AR - Argentina 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
EG - Egitto 1
ES - Italia 1
IM - Isola di Man 1
JM - Giamaica 1
PE - Perù 1
Totale 11.740
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Città #
Dublin 1.792
Chandler 1.147
Jacksonville 586
Izmir 439
Rome 426
Nanjing 365
Lawrence 161
Princeton 161
Nanchang 143
Ann Arbor 142
Wilmington 130
Beijing 117
Woodbridge 117
Dearborn 113
Ashburn 110
Brooklyn 102
Ogden 102
Boardman 99
Singapore 69
Shenyang 66
Grafing 65
Pune 65
Tianjin 64
Changsha 63
Kunming 62
Des Moines 56
Hebei 54
New York 53
Seattle 51
Inglewood 49
Jiaxing 46
Cassino 39
Brussels 38
West Jordan 38
Orange 37
Milan 34
Brandenburg 27
Changchun 25
Los Angeles 25
Hangzhou 24
Lanzhou 20
Auburn Hills 19
Shanghai 18
Helsinki 17
Naaldwijk 17
Verona 16
Gelsenkirchen 14
San Francisco 14
San Mateo 14
Kocaeli 13
Toronto 13
Norwalk 12
Jinan 11
Staten Island 10
Zhengzhou 10
Vienna 9
Saint Petersburg 8
Walnut 8
Bremen 7
Dronten 7
Ningbo 6
Falls Church 5
Hefei 5
Naples 5
Tappahannock 5
Bratislava 4
Haikou 4
Luxembourg 4
Redwood City 4
Shaoxing 4
Taizhou 4
Warsaw 4
Fuzhou 3
Grugliasco 3
Guangzhou 3
Hsinchu 3
Hyderabad 3
Melbourne 3
Redmond 3
Seveso 3
Shenzhen 3
Chandigarh 2
Dong Ket 2
Hanoi 2
Kuwait City 2
Lecco 2
Mainhausen 2
Parma 2
Strasbourg 2
Støvring 2
Sydney 2
Vittorio Veneto 2
Wenzhou 2
Aachen 1
Almere Stad 1
Amsterdam 1
Banqiao 1
Budapest 1
Cairo 1
Calderara Di Reno 1
Totale 7.671
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Nome #
The high frequency behaviour of high voltage and current IGBT modules 106
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 103
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 103
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 103
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 98
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 98
EMI Analysis in High power Converters for Traction Application 97
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 96
A general methodology for circuit simulation of high-voltage power devices 95
A lumped charge model for GTOs suitable for circuit simulation 94
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 93
Non-destructive tester for single event burnout of power diodes 93
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 93
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 92
Cosmic ray effects on power MOSFET 92
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 92
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 92
MAGFET Based Current Sensing for Power Integrated Circuit 92
Comparison among eligible topologies for MARX klystron modulators 92
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 91
Effects of heavy ion impact on power diodes 91
Driving optimization of high voltage IGBT modules for traction application 91
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 91
EMI Characterisation of high power IGBT modules For Traction Application 90
An On-Chip Non Invasive Integrated Current Sensing 90
PSPICE model for GTOs 90
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 90
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 89
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 89
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 89
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 88
Series Connection of High Power IGBT modules for traction applications 88
The robustness of series-connected high power IGBT modules 88
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 88
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 88
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 87
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 87
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 85
Investigation of MOSFET failure in soft-switching conditions 85
IGBT RBSOA non-destructive testing methods: Analysis and discussion 85
High Voltage, High Performance Switch using Series Connected IGBTs 84
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 84
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 84
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 84
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 83
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 83
The Reliability of New Generation Power MOSFETs in Radiation Environment 83
null 82
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 82
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs 82
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 82
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 82
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 82
Experimental study of power MOSFET’s gate damage in radiation environment 82
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 81
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 81
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 81
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 81
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 81
A circuit model for GTOs based on lumped charge approach 81
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 80
null 80
Developments on DC/DC converters for the LHC experiment upgrades 80
Una antenna Uda-Yagi adattativa utilizzante un algoritmo particle swarm con particelle a dinamica variabile 80
Innovative driving strategies for new generation high power igbt modules 79
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 79
Non Destructive SOA Testing of Power Modules (Invited) 79
Operation of SiC normally-off JFET at the edges of its safe operating area 79
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 79
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 79
Thermal damage in SiC Schottky diodes induced by SE heavy ions 79
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 79
null 78
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 78
A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules 78
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 77
IGBT Modules Robustness During Turn-Off Commutation 77
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 77
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 77
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 77
Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters 77
Power converters for future LHC experiments 76
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 76
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 76
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode 75
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 75
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 75
Approaching repetitive short circuit tests on MW-scale power modules by means of an automatic testing setup 75
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 74
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 74
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations 74
Wire bond degradation under thermo- and pure mechanical loading 74
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules 74
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations 73
Junction temperature estimation method for a 600V, 30A IGBT module during converter operation 73
Lumped Charge PSPICE Model for High–Voltage IGBTs 73
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 72
IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current 72
Modeling of Short-Circuit-Related Thermal Stress in Aged IGBT Modules 72
Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester 71
Totale 8.381
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Categoria #
all - tutte 48.175
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.175
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.393 454 10 5 100 11 266 90 175 47 47 185 3
2020/20211.343 171 3 167 173 2 225 7 162 1 187 62 183
2021/20221.320 13 1 18 81 77 8 70 95 320 2 211 424
2022/20235.011 327 392 208 335 295 972 0 252 2.076 7 77 70
2023/2024856 80 52 36 31 24 112 126 78 155 52 0 110
2024/202513 13 0 0 0 0 0 0 0 0 0 0 0
Totale 12.246