IRIS
IANNUZZO, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 36.390
NA - Nord America 6.948
AS - Asia 4.295
SA - Sud America 180
AF - Africa 47
Continente sconosciuto - Info sul continente non disponibili 21
OC - Oceania 11
Totale 47.892
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Nazione #
SE - Svezia 30.864
US - Stati Uniti d'America 6.858
IE - Irlanda 1.795
CN - Cina 1.744
SG - Singapore 1.270
DE - Germania 883
UA - Ucraina 831
RU - Federazione Russa 716
IT - Italia 588
TR - Turchia 465
HK - Hong Kong 339
GB - Regno Unito 248
IN - India 218
FI - Finlandia 193
BR - Brasile 119
VN - Vietnam 117
FR - Francia 78
CA - Canada 47
NL - Olanda 46
BE - Belgio 41
PL - Polonia 36
MX - Messico 32
JP - Giappone 26
BD - Bangladesh 22
EU - Europa 21
AR - Argentina 20
ZA - Sudafrica 18
ES - Italia 16
DK - Danimarca 13
AT - Austria 12
IQ - Iraq 11
VE - Venezuela 11
AU - Australia 10
EC - Ecuador 9
UZ - Uzbekistan 9
MA - Marocco 8
MY - Malesia 8
SA - Arabia Saudita 8
CL - Cile 7
LT - Lituania 7
PK - Pakistan 7
CO - Colombia 6
ID - Indonesia 6
EG - Egitto 5
KR - Corea 5
RO - Romania 5
TN - Tunisia 5
TW - Taiwan 5
KZ - Kazakistan 4
LU - Lussemburgo 4
PA - Panama 4
SK - Slovacchia (Repubblica Slovacca) 4
AZ - Azerbaigian 3
DZ - Algeria 3
ET - Etiopia 3
HU - Ungheria 3
IL - Israele 3
JM - Giamaica 3
JO - Giordania 3
KE - Kenya 3
KW - Kuwait 3
PE - Perù 3
PY - Paraguay 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
GE - Georgia 2
KG - Kirghizistan 2
NP - Nepal 2
OM - Oman 2
PH - Filippine 2
UY - Uruguay 2
AL - Albania 1
BY - Bielorussia 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EE - Estonia 1
GA - Gabon 1
GR - Grecia 1
IM - Isola di Man 1
LK - Sri Lanka 1
MK - Macedonia 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
TH - Thailandia 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
UG - Uganda 1
Totale 47.892
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Città #
Stockholm 29.722
Dublin 1.795
Chandler 1.147
Singapore 745
Jacksonville 586
The Dalles 518
San Jose 482
Ashburn 478
Izmir 439
Rome 427
Nanjing 365
Dallas 354
Hong Kong 333
Boardman 279
Beijing 257
Hefei 168
Lawrence 161
Princeton 161
Nanchang 143
Ann Arbor 142
Wilmington 130
Los Angeles 126
Brooklyn 122
Moscow 119
Woodbridge 117
Dearborn 113
New York 110
Ogden 102
Shenyang 66
Grafing 65
Pune 65
Tianjin 64
Changsha 63
Kunming 62
Santa Clara 62
Des Moines 61
Seattle 55
Hebei 54
Inglewood 50
Jiaxing 46
Munich 46
Council Bluffs 43
Brussels 41
Cassino 39
Milan 39
West Jordan 38
Orange 37
Orem 35
Hanoi 34
Helsinki 32
Warsaw 30
Mumbai 28
Brandenburg 27
Ho Chi Minh City 26
Changchun 25
Tokyo 25
Denver 24
Hangzhou 24
São Paulo 24
Shanghai 21
Frankfurt am Main 20
Lanzhou 20
San Francisco 20
Auburn Hills 19
Toronto 19
Atlanta 18
Chennai 17
Naaldwijk 17
Manchester 16
Poplar 16
Verona 16
Houston 15
Mexico City 15
Amsterdam 14
Boston 14
Gelsenkirchen 14
Johannesburg 14
London 14
Montreal 14
San Mateo 14
Kocaeli 13
St Petersburg 13
Norwalk 12
Jinan 11
Turku 11
Vienna 11
New Delhi 10
Staten Island 10
Zhengzhou 10
Phoenix 9
Haiphong 8
Saint Petersburg 8
Walnut 8
Bexley 7
Bremen 7
Chicago 7
Dronten 7
Naples 7
Querétaro 7
Tashkent 7
Totale 41.501
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Nome #
EMI Analysis in High power Converters for Traction Application 2.033
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.022
Driving optimization of high voltage IGBT modules for traction application 2.022
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.013
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.004
The high frequency behaviour of high voltage and current IGBT modules 2.004
EMI Characterisation of high power IGBT modules For Traction Application 2.000
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.000
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 1.995
IGBT Modules Robustness During Turn-Off Commutation 1.993
Series Connection of High Power IGBT modules for traction applications 1.986
The robustness of series-connected high power IGBT modules 1.982
High Voltage, High Performance Switch using Series Connected IGBTs 1.980
Investigation of MOSFET failure in soft-switching conditions 1.975
Experimental characterisation of high efficiency resonant gate driver circuit 1.971
Innovative driving strategies for new generation high power igbt modules 1.963
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 173
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 169
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 162
A lumped charge model for GTOs suitable for circuit simulation 162
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 160
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 160
Comparison among eligible topologies for MARX klystron modulators 159
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 159
A general methodology for circuit simulation of high-voltage power devices 154
A circuit model for GTOs based on lumped charge approach 154
An On-Chip Non Invasive Integrated Current Sensing 150
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 149
Cosmic ray effects on power MOSFET 144
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 144
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 144
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 143
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 142
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 141
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 140
Effects of heavy ion impact on power diodes 139
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 137
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 137
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 136
Non-destructive tester for single event burnout of power diodes 136
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 135
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations 135
Developments on DC/DC converters for the LHC experiment upgrades 135
PSPICE model for GTOs 133
MAGFET Based Current Sensing for Power Integrated Circuit 133
Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction 133
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 132
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 132
A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations 131
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 130
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 129
IGBT RBSOA non-destructive testing methods: Analysis and discussion 129
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 128
An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit 128
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 127
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 126
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs 126
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 126
Online junction temperature measurement using peak gate current 126
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 125
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 125
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 123
A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules 123
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 122
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 122
The Reliability of New Generation Power MOSFETs in Radiation Environment 122
Power converters for future LHC experiments 121
Experimental study of power MOSFET’s gate damage in radiation environment 121
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 120
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 120
Non Destructive SOA Testing of Power Modules (Invited) 120
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 119
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 119
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 118
Operation of SiC normally-off JFET at the edges of its safe operating area 118
Una antenna Uda-Yagi adattativa utilizzante un algoritmo particle swarm con particelle a dinamica variabile 118
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 117
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 117
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 117
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 116
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 115
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 114
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 114
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 114
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 112
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 112
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 111
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 111
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 109
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 109
Thermal damage in SiC Schottky diodes induced by SE heavy ions 109
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 107
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations 106
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 106
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 105
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode 105
Wire bond degradation under thermo- and pure mechanical loading 105
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 104
Approaching repetitive short circuit tests on MW-scale power modules by means of an automatic testing setup 104
A comprehensive investigation on the short circuit performance of MW-level IGBT power modules 104
Totale 42.710
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Categoria #
all - tutte 114.106
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 114.106
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021432 0 0 0 0 0 0 0 0 0 187 62 183
2021/20221.320 13 1 18 81 77 8 70 95 320 2 211 424
2022/20235.011 327 392 208 335 295 972 0 252 2.076 7 77 70
2023/2024856 80 52 36 31 24 112 126 78 155 52 0 110
2024/20252.361 89 56 176 15 218 7 255 136 810 74 357 168
2025/202633.807 323 816 151 335 585 505 748 143 611 29.590 0 0
Totale 48.401