IRIS
IANNUZZO, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 36.434
NA - Nord America 7.920
AS - Asia 4.420
Continente sconosciuto - Info sul continente non disponibili 530
SA - Sud America 184
AF - Africa 48
OC - Oceania 11
Totale 49.547
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Nazione #
SE - Svezia 30.864
US - Stati Uniti d'America 7.811
IE - Irlanda 1.796
CN - Cina 1.763
SG - Singapore 1.317
DE - Germania 883
UA - Ucraina 832
RU - Federazione Russa 716
IT - Italia 618
TR - Turchia 465
HK - Hong Kong 341
GB - Regno Unito 250
IN - India 218
FI - Finlandia 193
VN - Vietnam 121
BR - Brasile 120
FR - Francia 81
BD - Bangladesh 70
CA - Canada 54
NL - Olanda 48
BE - Belgio 41
PL - Polonia 36
MX - Messico 35
JP - Giappone 27
AR - Argentina 22
EU - Europa 21
ES - Italia 19
ZA - Sudafrica 18
DK - Danimarca 13
AT - Austria 12
IQ - Iraq 11
VE - Venezuela 11
AU - Australia 10
MY - Malesia 10
EC - Ecuador 9
UZ - Uzbekistan 9
CL - Cile 8
MA - Marocco 8
SA - Arabia Saudita 8
LT - Lituania 7
PK - Pakistan 7
CO - Colombia 6
ID - Indonesia 6
EG - Egitto 5
KR - Corea 5
RO - Romania 5
TN - Tunisia 5
TW - Taiwan 5
JM - Giamaica 4
KE - Kenya 4
KZ - Kazakistan 4
LU - Lussemburgo 4
PA - Panama 4
SK - Slovacchia (Repubblica Slovacca) 4
AZ - Azerbaigian 3
DZ - Algeria 3
ET - Etiopia 3
GT - Guatemala 3
HU - Ungheria 3
IL - Israele 3
JO - Giordania 3
KW - Kuwait 3
NP - Nepal 3
PE - Perù 3
PY - Paraguay 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
CR - Costa Rica 2
GE - Georgia 2
KG - Kirghizistan 2
OM - Oman 2
PH - Filippine 2
UY - Uruguay 2
AL - Albania 1
BG - Bulgaria 1
BY - Bielorussia 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EE - Estonia 1
GA - Gabon 1
GR - Grecia 1
HN - Honduras 1
IM - Isola di Man 1
KN - Saint Kitts e Nevis 1
LB - Libano 1
LK - Sri Lanka 1
MK - Macedonia 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
PR - Porto Rico 1
PS - Palestinian Territory 1
RS - Serbia 1
SV - El Salvador 1
TH - Thailandia 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
UG - Uganda 1
Totale 49.038
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Città #
Stockholm 29.722
Dublin 1.795
Chandler 1.148
Singapore 750
Council Bluffs 625
Jacksonville 587
San Jose 554
The Dalles 518
Ashburn 507
Izmir 439
Rome 431
Nanjing 365
Dallas 364
Hong Kong 335
Boardman 279
Beijing 261
Hefei 168
Lawrence 161
Princeton 161
Nanchang 143
Ann Arbor 142
Los Angeles 134
Wilmington 130
Brooklyn 123
New York 120
Moscow 119
Woodbridge 117
Dearborn 113
Ogden 102
Columbus 88
Santa Clara 70
Shenyang 66
Grafing 65
Pune 65
Tianjin 64
Changsha 63
Kunming 62
Des Moines 61
Seattle 55
Hebei 54
Inglewood 50
Jiaxing 46
Munich 46
Phoenix 44
Milan 42
Brussels 41
Cassino 39
Orem 39
Orange 38
West Jordan 38
Hanoi 36
Helsinki 32
Warsaw 30
Mumbai 28
Brandenburg 27
Ho Chi Minh City 27
Denver 26
Changchun 25
São Paulo 25
Tokyo 25
Hangzhou 24
Shanghai 24
Toronto 22
San Francisco 21
Atlanta 20
Frankfurt am Main 20
Lanzhou 20
Auburn Hills 19
Verona 19
Houston 18
Chennai 17
Mexico City 17
Naaldwijk 17
Manchester 16
Poplar 16
London 15
Montreal 15
Amsterdam 14
Boston 14
Gelsenkirchen 14
Johannesburg 14
San Mateo 14
Kocaeli 13
St Petersburg 13
Norwalk 12
Chicago 11
Jinan 11
Turku 11
Vienna 11
New Delhi 10
Staten Island 10
Zhengzhou 10
Haiphong 8
Saint Petersburg 8
Walnut 8
Bexley 7
Bremen 7
Dronten 7
Naples 7
Querétaro 7
Totale 42.391
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Nome #
EMI Analysis in High power Converters for Traction Application 2.041
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.033
The high frequency behaviour of high voltage and current IGBT modules 2.033
Driving optimization of high voltage IGBT modules for traction application 2.031
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.019
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.018
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.014
EMI Characterisation of high power IGBT modules For Traction Application 2.013
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 2.004
IGBT Modules Robustness During Turn-Off Commutation 2.000
Series Connection of High Power IGBT modules for traction applications 1.999
High Voltage, High Performance Switch using Series Connected IGBTs 1.992
The robustness of series-connected high power IGBT modules 1.991
Experimental characterisation of high efficiency resonant gate driver circuit 1.984
Investigation of MOSFET failure in soft-switching conditions 1.983
Innovative driving strategies for new generation high power igbt modules 1.976
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 185
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 180
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 178
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 173
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 171
A lumped charge model for GTOs suitable for circuit simulation 170
Comparison among eligible topologies for MARX klystron modulators 169
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 167
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 166
A general methodology for circuit simulation of high-voltage power devices 165
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 163
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 162
An On-Chip Non Invasive Integrated Current Sensing 161
A circuit model for GTOs based on lumped charge approach 160
Cosmic ray effects on power MOSFET 159
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 156
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 154
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 151
Effects of heavy ion impact on power diodes 150
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs 150
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 149
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 148
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 147
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 147
Non-destructive tester for single event burnout of power diodes 145
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations 144
PSPICE model for GTOs 142
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 142
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 140
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 139
MAGFET Based Current Sensing for Power Integrated Circuit 139
IGBT RBSOA non-destructive testing methods: Analysis and discussion 139
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 139
Developments on DC/DC converters for the LHC experiment upgrades 139
Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction 138
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 136
A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations 136
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 135
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 135
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 133
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 133
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 133
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 132
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 131
A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules 131
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 130
An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit 130
Online junction temperature measurement using peak gate current 130
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 129
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 129
Operation of SiC normally-off JFET at the edges of its safe operating area 128
The Reliability of New Generation Power MOSFETs in Radiation Environment 128
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 128
Non Destructive SOA Testing of Power Modules (Invited) 126
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 125
Power converters for future LHC experiments 125
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 124
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 124
Experimental study of power MOSFET’s gate damage in radiation environment 124
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 123
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 123
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 122
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 121
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 120
Una antenna Uda-Yagi adattativa utilizzante un algoritmo particle swarm con particelle a dinamica variabile 120
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 118
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 118
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 118
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 117
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 117
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 117
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 116
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 116
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 115
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations 114
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode 113
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 112
Thermal damage in SiC Schottky diodes induced by SE heavy ions 112
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 112
Wire bond degradation under thermo- and pure mechanical loading 112
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 111
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 111
Lumped Charge PSPICE Model for High–Voltage IGBTs 109
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 108
Totale 43.568
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Categoria #
all - tutte 122.665
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 122.665
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.307 0 1 18 81 77 8 70 95 320 2 211 424
2022/20235.011 327 392 208 335 295 972 0 252 2.076 7 77 70
2023/2024856 80 52 36 31 24 112 126 78 155 52 0 110
2024/20252.361 89 56 176 15 218 7 255 136 810 74 357 168
2025/202634.279 323 816 151 335 585 505 748 143 611 29.655 285 122
2026/2027674 422 252 0 0 0 0 0 0 0 0 0 0
Totale 49.547