IANNUZZO, Francesco

IANNUZZO, Francesco  

Dipartimento di Ingegneria Elettrica e dell'Informazione "Maurizio Scarano"  

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Risultati 1 - 20 di 163 (tempo di esecuzione: 0.104 secondi).
Titolo Data di pubblicazione Autore(i) File
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 1-gen-2008 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 1-gen-2008 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules 1-gen-2016 Bahman, Amir Sajjad; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco; Blaabjerg, Frede
A circuit model for GTOs based on lumped charge approach 1-gen-1998 Iannuzzo, Francesco; Busatto, Giovanni
A comprehensive investigation on the short circuit performance of MW-level IGBT power modules 1-gen-2015 Wu, Rui; Diaz Reigosa, Paula; Iannuzzo, Francesco; Wang, Huai; Blaabjerg, Frede
A general methodology for circuit simulation of high-voltage power devices 1-gen-2000 Iannuzzo, Francesco; Busatto, Giovanni
A lumped charge model for GTOs suitable for circuit simulation 1-gen-1999 Iannuzzo, Francesco; Busatto, Giovanni
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 1-gen-2011 Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 1-gen-2007 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina
A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules 1-gen-2016 Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze; Blaabjerg, Frede
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis 1-gen-2017 Ceccarelli, L.; Reigosa, P. D.; Iannuzzo, F.; Blaabjerg, F.
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations 1-gen-2014 Rui, Wu; Huai, Wang; Ke, Ma; Pramod, Ghimire; Iannuzzo, Francesco; Frede, Blaabjerg
A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations 1-gen-2016 Wu, Rui; Wang, Huai; Pedersen, Kristian Bonderup; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco; Blaabjerg, Frede
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 1-gen-2012 L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction 1-gen-2016 Luo, Haoze; Iannuzzo, Francesco; Ma, Ke; Blaabjerg, Frede; Li, Wuhua; He, Xiangning
Advanced power cycler with intelligent monitoring strategy of IGBT module under test 1-gen-2017 Choi, U. M.; Blaabjerg, F.; Iannuzzo, F.
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 1-gen-2002 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit 1-gen-2014 Rui, Wu; Iannuzzo, Francesco; Huai, Wang; Frede, Blaabjerg
An On-Chip Non Invasive Integrated Current Sensing 1-gen-2002 Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 1-gen-2004 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori