A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.

Online junction temperature measurement using peak gate current

IANNUZZO, Francesco;
2015-01-01

Abstract

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.
2015
9781479967353
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11580/47245
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