IRIS
BUSATTO, Giovanni
 Distribuzione geografica
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Continente #
EU - Europa 6.635
NA - Nord America 6.360
AS - Asia 3.792
SA - Sud America 185
AF - Africa 30
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 9
Totale 17.037
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Nazione #
US - Stati Uniti d'America 6.248
IE - Irlanda 1.644
CN - Cina 1.518
SE - Svezia 1.231
SG - Singapore 1.100
DE - Germania 855
RU - Federazione Russa 724
UA - Ucraina 715
IT - Italia 673
TR - Turchia 436
HK - Hong Kong 300
GB - Regno Unito 253
IN - India 251
FI - Finlandia 206
BR - Brasile 137
FR - Francia 96
VN - Vietnam 94
CA - Canada 70
BE - Belgio 65
PL - Polonia 46
NL - Olanda 42
MX - Messico 33
JP - Giappone 29
EU - Europa 26
ES - Italia 20
ZA - Sudafrica 19
AR - Argentina 18
AT - Austria 18
BD - Bangladesh 13
DK - Danimarca 9
EC - Ecuador 9
CL - Cile 8
LT - Lituania 8
LU - Lussemburgo 8
AU - Australia 7
CZ - Repubblica Ceca 6
ID - Indonesia 6
IQ - Iraq 6
AE - Emirati Arabi Uniti 5
PK - Pakistan 5
SA - Arabia Saudita 5
HU - Ungheria 4
IL - Israele 4
MY - Malesia 4
PA - Panama 4
TW - Taiwan 4
VE - Venezuela 4
DZ - Algeria 3
KW - Kuwait 3
PE - Perù 3
RO - Romania 3
SK - Slovacchia (Repubblica Slovacca) 3
CO - Colombia 2
EG - Egitto 2
KE - Kenya 2
KG - Kirghizistan 2
KZ - Kazakistan 2
MA - Marocco 2
PY - Paraguay 2
UY - Uruguay 2
UZ - Uzbekistan 2
AL - Albania 1
AM - Armenia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BY - Bielorussia 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
IM - Isola di Man 1
JM - Giamaica 1
JO - Giordania 1
LV - Lettonia 1
NI - Nicaragua 1
NP - Nepal 1
PW - Palau 1
TN - Tunisia 1
TO - Tonga 1
TT - Trinidad e Tobago 1
Totale 17.037
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Città #
Dublin 1.643
Chandler 1.147
Singapore 672
Jacksonville 531
Rome 434
Ashburn 413
Izmir 404
The Dalles 377
Dallas 337
Nanjing 334
Hong Kong 296
Boardman 271
Beijing 253
Hefei 160
Los Angeles 160
Ann Arbor 155
Lawrence 144
Princeton 144
Brooklyn 138
Wilmington 131
Woodbridge 123
Nanchang 116
Moscow 112
New York 109
Dearborn 98
Ogden 97
Grafing 91
Pune 90
Cassino 87
Seattle 80
Munich 73
Brussels 65
Inglewood 62
Santa Clara 57
Kunming 56
Tianjin 56
Council Bluffs 53
Hebei 52
Changsha 49
Des Moines 48
Helsinki 48
Shenyang 45
West Jordan 44
Orange 39
Ho Chi Minh City 38
Jiaxing 37
Warsaw 37
Milan 33
Stockholm 30
Poplar 29
Denver 27
Montreal 27
San Francisco 27
São Paulo 27
Tokyo 27
Mumbai 24
Orem 24
Toronto 24
Turku 23
Boston 22
Verona 22
Naaldwijk 21
Atlanta 19
Brandenburg 19
Chennai 19
Hangzhou 19
London 19
Mexico City 19
St Petersburg 19
Changchun 18
Hanoi 18
Johannesburg 17
Shanghai 17
Auburn Hills 16
Gelsenkirchen 16
Houston 16
Kocaeli 15
San Jose 15
Manchester 14
San Mateo 14
Frankfurt am Main 13
Norwalk 13
Phoenix 13
Vienna 13
Chicago 12
Bremen 11
Lanzhou 11
Ankara 9
Padova 9
Querétaro 9
Saint Petersburg 9
Zhengzhou 9
Amsterdam 8
Jinan 8
Luxembourg 8
New Delhi 8
Shenzhen 8
Bexley 7
Dronten 7
Gragnano 7
Totale 10.894
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Nome #
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 161
EMI Analysis in High power Converters for Traction Application 157
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 151
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 150
Driving optimization of high voltage IGBT modules for traction application 150
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 148
A lumped charge model for GTOs suitable for circuit simulation 148
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 147
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 145
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 143
A general methodology for circuit simulation of high-voltage power devices 142
The high frequency behaviour of high voltage and current IGBT modules 142
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 141
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 141
A circuit model for GTOs based on lumped charge approach 141
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode 139
An Integrated milli-metric Cell Actuator: Design and Test 139
Comparison among eligible topologies for MARX klystron modulators 139
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 138
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 137
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 136
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 136
An On-Chip Non Invasive Integrated Current Sensing 136
A non-destructive technique for magnetic imaging of current distributions inside power modules 136
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 135
EMI Characterisation of high power IGBT modules For Traction Application 134
Cosmic ray effects on power MOSFET 134
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 133
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 132
Advanced RBSOA Analysis for Advanced Power BJT's 132
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 132
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 131
Effects of heavy ion impact on power diodes 130
PSPICE model for GTOs 130
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 130
A non-destructive technique for magnetic imaging of current distributions inside power modules 130
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 129
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 129
Non-destructive tester for single event burnout of power diodes 128
MAGFET Based Current Sensing for Power Integrated Circuit 128
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 128
Perspective Performances of MOS-Gated GTO in High-Power Applications 126
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 126
Developments on DC/DC converters for the LHC experiment upgrades 126
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 125
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 125
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 125
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 124
IGBT Modules Robustness During Turn-Off Commutation 124
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 124
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 123
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 123
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 122
Experimental measurement of recombination lifetime in proton irradiated power devices 122
Series Connection of High Power IGBT modules for traction applications 121
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 121
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 121
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 121
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 121
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions 120
The robustness of series-connected high power IGBT modules 120
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 120
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 119
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 119
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 117
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation 116
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 116
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 115
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 115
Power converters for future LHC experiments 115
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 114
IGBT RBSOA non-destructive testing methods: Analysis and discussion 114
High Voltage, High Performance Switch using Series Connected IGBTs 113
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 113
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 113
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 113
Reliability tests of power IGBTs for railway traction 113
Series connection of IGBTs in hard-switching applications 113
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 113
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 113
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 112
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 112
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 112
Experimental study of power MOSFET’s gate damage in radiation environment 112
High voltage bipolar mode JFET with normally-Off characteristics 111
Non Destructive SOA Testing of Power Modules (Invited) 111
The Reliability of New Generation Power MOSFETs in Radiation Environment 111
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 111
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 110
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 110
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 109
An On-Chip Non Invasive Integrated Current Sensing 109
Investigation of MOSFET failure in soft-switching conditions 109
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 109
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 109
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 108
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 108
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 108
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 108
BMFET vs BJT in reverse bias safe operations 106
Totale 12.507
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Categoria #
all - tutte 79.520
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 79.520
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021781 0 0 0 0 0 200 10 142 32 174 58 165
2021/20221.412 15 8 19 104 96 9 98 89 339 4 224 407
2022/20234.890 345 431 220 315 309 916 2 271 1.909 7 74 91
2023/20241.001 105 64 46 32 32 162 115 111 145 61 2 126
2024/20252.532 85 64 176 61 235 27 342 140 824 15 360 203
2025/20263.222 411 826 221 538 794 432 0 0 0 0 0 0
Totale 17.658