BUSATTO, Giovanni
 Distribuzione geografica
Continente #
EU - Europa 45.758
NA - Nord America 7.823
AS - Asia 4.452
SA - Sud America 265
AF - Africa 54
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 10
Totale 58.388
Nazione #
SE - Svezia 40.202
US - Stati Uniti d'America 7.682
CN - Cina 1.685
IE - Irlanda 1.647
SG - Singapore 1.286
DE - Germania 863
RU - Federazione Russa 760
IT - Italia 719
UA - Ucraina 718
TR - Turchia 441
HK - Hong Kong 355
IN - India 284
GB - Regno Unito 271
FI - Finlandia 206
BR - Brasile 180
VN - Vietnam 172
FR - Francia 106
CA - Canada 78
BD - Bangladesh 71
BE - Belgio 66
NL - Olanda 53
PL - Polonia 47
MX - Messico 45
JP - Giappone 43
AR - Argentina 33
EU - Europa 26
ES - Italia 25
ZA - Sudafrica 20
AT - Austria 18
PK - Pakistan 17
IQ - Iraq 15
EC - Ecuador 14
MA - Marocco 14
CL - Cile 10
ID - Indonesia 10
MY - Malesia 10
VE - Venezuela 10
DK - Danimarca 9
SA - Arabia Saudita 9
AU - Australia 8
LT - Lituania 8
LU - Lussemburgo 8
UZ - Uzbekistan 8
CO - Colombia 7
AE - Emirati Arabi Uniti 6
CZ - Repubblica Ceca 6
HU - Ungheria 5
KZ - Kazakistan 5
PA - Panama 5
DZ - Algeria 4
IL - Israele 4
JM - Giamaica 4
KE - Kenya 4
KG - Kirghizistan 4
KW - Kuwait 4
NP - Nepal 4
PE - Perù 4
TN - Tunisia 4
TW - Taiwan 4
AZ - Azerbaigian 3
EG - Egitto 3
ET - Etiopia 3
GR - Grecia 3
JO - Giordania 3
RO - Romania 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
AL - Albania 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
EE - Estonia 2
LV - Lettonia 2
OM - Oman 2
PH - Filippine 2
PY - Paraguay 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AM - Armenia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BY - Bielorussia 1
CR - Costa Rica 1
DM - Dominica 1
GA - Gabon 1
GE - Georgia 1
GT - Guatemala 1
HN - Honduras 1
IM - Isola di Man 1
LB - Libano 1
MK - Macedonia 1
NI - Nicaragua 1
NO - Norvegia 1
PW - Palau 1
RS - Serbia 1
TO - Tonga 1
Totale 58.388
Città #
Stockholm 39.001
Dublin 1.645
Chandler 1.147
Singapore 753
Ashburn 627
San Jose 555
Jacksonville 532
The Dalles 486
Rome 445
Council Bluffs 404
Izmir 404
Hong Kong 350
Dallas 348
Nanjing 334
Beijing 274
Boardman 271
Los Angeles 169
Hefei 160
Ann Arbor 155
Moscow 146
Lawrence 144
Princeton 144
Brooklyn 143
Wilmington 131
New York 127
Woodbridge 123
Nanchang 116
Dearborn 98
Ogden 97
Grafing 91
Pune 90
Cassino 87
Seattle 81
Santa Clara 74
Munich 73
Brussels 66
Inglewood 62
Kunming 56
Tianjin 56
Ho Chi Minh City 53
Hebei 52
Changsha 49
Des Moines 49
Helsinki 48
Orem 48
Shenyang 45
West Jordan 44
Orange 39
Hanoi 38
Tokyo 38
Warsaw 38
Jiaxing 37
Milan 35
San Francisco 32
São Paulo 32
Poplar 29
Montreal 28
Denver 27
Mumbai 27
Toronto 27
Chennai 25
Mexico City 24
Verona 24
Turku 23
Boston 22
Atlanta 21
Frankfurt am Main 21
Manchester 21
Naaldwijk 21
Hangzhou 20
St Petersburg 20
Brandenburg 19
London 19
Changchun 18
Houston 18
Johannesburg 18
Shanghai 18
Amsterdam 17
Phoenix 17
Auburn Hills 16
Gelsenkirchen 16
New Delhi 16
Chicago 15
Kocaeli 15
San Mateo 14
Norwalk 13
Vienna 13
Lanzhou 12
Bremen 11
Ankara 9
Haiphong 9
Naples 9
Padova 9
Querétaro 9
Saint Petersburg 9
Zhengzhou 9
Jinan 8
Luxembourg 8
Shenzhen 8
Bexley 7
Totale 51.501
Nome #
EMI Analysis in High power Converters for Traction Application 2.039
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.030
Driving optimization of high voltage IGBT modules for traction application 2.028
The high frequency behaviour of high voltage and current IGBT modules 2.028
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 2.020
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.017
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.016
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.015
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.012
EMI Characterisation of high power IGBT modules For Traction Application 2.007
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 2.001
IGBT Modules Robustness During Turn-Off Commutation 1.998
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 1.995
Series Connection of High Power IGBT modules for traction applications 1.994
High Voltage, High Performance Switch using Series Connected IGBTs 1.988
The robustness of series-connected high power IGBT modules 1.988
Experimental characterisation of high efficiency resonant gate driver circuit 1.981
Investigation of MOSFET failure in soft-switching conditions 1.980
Innovative driving strategies for new generation high power igbt modules 1.972
All‐SiC 99.4%‐efficient three‐phase T‐type inverter with DC‐side common‐mode filter 1.941
Energy Efficient Architecture of Power Supply for Field Devices and Controllers of the RFI Computer-Based Interlocking 1.926
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 179
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 176
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 171
Comparison among eligible topologies for MARX klystron modulators 167
A lumped charge model for GTOs suitable for circuit simulation 166
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 165
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 165
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 164
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 163
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 159
A general methodology for circuit simulation of high-voltage power devices 159
An On-Chip Non Invasive Integrated Current Sensing 158
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 158
A circuit model for GTOs based on lumped charge approach 157
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode 156
An Integrated milli-metric Cell Actuator: Design and Test 156
Cosmic ray effects on power MOSFET 155
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 154
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 153
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 152
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 151
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 148
Effects of heavy ion impact on power diodes 147
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 147
A non-destructive technique for magnetic imaging of current distributions inside power modules 146
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 146
A non-destructive technique for magnetic imaging of current distributions inside power modules 146
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 144
Advanced RBSOA Analysis for Advanced Power BJT's 144
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 143
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 143
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 143
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 143
Non-destructive tester for single event burnout of power diodes 142
Perspective Performances of MOS-Gated GTO in High-Power Applications 141
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 139
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 138
Developments on DC/DC converters for the LHC experiment upgrades 138
Experimental measurement of recombination lifetime in proton irradiated power devices 138
IGBT RBSOA non-destructive testing methods: Analysis and discussion 137
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 137
PSPICE model for GTOs 136
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 136
MAGFET Based Current Sensing for Power Integrated Circuit 136
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 136
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 135
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 135
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 134
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 133
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 132
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 132
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation 132
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions 130
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 130
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 130
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 129
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 129
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 128
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 127
The Reliability of New Generation Power MOSFETs in Radiation Environment 127
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 127
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 125
Non Destructive SOA Testing of Power Modules (Invited) 124
Operation of SiC normally-off JFET at the edges of its safe operating area 124
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 124
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 123
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 123
An On-Chip Non Invasive Integrated Current Sensing 123
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 123
Power converters for future LHC experiments 123
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 122
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 122
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 121
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 121
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 121
Experimental study of power MOSFET’s gate damage in radiation environment 121
High voltage bipolar mode JFET with normally-Off characteristics 120
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 120
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 119
Totale 53.043
Categoria #
all - tutte 129.192
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 129.192


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.412 15 8 19 104 96 9 98 89 339 4 224 407
2022/20234.890 345 431 220 315 309 916 2 271 1.909 7 74 91
2023/20241.001 105 64 46 32 32 162 115 111 145 61 2 126
2024/20252.532 85 64 176 61 235 27 342 140 824 15 360 203
2025/202644.338 411 826 221 538 794 571 676 163 788 38.881 324 145
2026/2027251 251 0 0 0 0 0 0 0 0 0 0 0
Totale 59.025