IRIS
BUSATTO, Giovanni
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
EU - Europa 6.609
NA - Nord America 6.205
AS - Asia 3.662
SA - Sud America 179
AF - Africa 28
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 9
Totale 16.718
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 6.104
IE - Irlanda 1.644
CN - Cina 1.517
SE - Svezia 1.227
SG - Singapore 990
DE - Germania 855
RU - Federazione Russa 722
UA - Ucraina 715
IT - Italia 673
TR - Turchia 434
HK - Hong Kong 294
GB - Regno Unito 245
IN - India 243
FI - Finlandia 206
BR - Brasile 131
FR - Francia 96
VN - Vietnam 94
BE - Belgio 65
CA - Canada 65
NL - Olanda 41
PL - Polonia 39
MX - Messico 27
EU - Europa 26
JP - Giappone 26
AR - Argentina 18
AT - Austria 18
ES - Italia 18
ZA - Sudafrica 17
BD - Bangladesh 13
DK - Danimarca 9
EC - Ecuador 9
CL - Cile 8
LU - Lussemburgo 8
AU - Australia 7
CZ - Repubblica Ceca 6
ID - Indonesia 6
IQ - Iraq 6
LT - Lituania 6
AE - Emirati Arabi Uniti 5
PK - Pakistan 5
SA - Arabia Saudita 5
HU - Ungheria 4
IL - Israele 4
MY - Malesia 4
PA - Panama 4
TW - Taiwan 4
VE - Venezuela 4
DZ - Algeria 3
KW - Kuwait 3
PE - Perù 3
RO - Romania 3
SK - Slovacchia (Repubblica Slovacca) 3
CO - Colombia 2
EG - Egitto 2
KE - Kenya 2
KG - Kirghizistan 2
KZ - Kazakistan 2
MA - Marocco 2
PY - Paraguay 2
UY - Uruguay 2
UZ - Uzbekistan 2
AL - Albania 1
AM - Armenia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BY - Bielorussia 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
IM - Isola di Man 1
JM - Giamaica 1
JO - Giordania 1
LV - Lettonia 1
NI - Nicaragua 1
NP - Nepal 1
PW - Palau 1
TN - Tunisia 1
TO - Tonga 1
TT - Trinidad e Tobago 1
Totale 16.718
Salva come PNG Salva come JPEG
Città #
Dublin 1.643
Chandler 1.147
Singapore 562
Jacksonville 531
Rome 434
Izmir 404
Ashburn 379
The Dalles 359
Dallas 336
Nanjing 334
Hong Kong 290
Boardman 271
Beijing 253
Hefei 160
Ann Arbor 155
Los Angeles 150
Lawrence 144
Princeton 144
Brooklyn 138
Wilmington 131
Woodbridge 123
Nanchang 116
Moscow 112
New York 102
Dearborn 98
Ogden 97
Grafing 91
Pune 90
Cassino 87
Seattle 79
Munich 73
Brussels 65
Inglewood 62
Kunming 56
Santa Clara 56
Tianjin 56
Council Bluffs 53
Hebei 52
Changsha 49
Des Moines 48
Helsinki 48
Shenyang 45
West Jordan 44
Orange 39
Ho Chi Minh City 38
Jiaxing 37
Milan 33
Warsaw 31
San Francisco 27
Stockholm 26
Poplar 25
São Paulo 24
Tokyo 24
Toronto 24
Montreal 23
Mumbai 23
Turku 23
Denver 22
Verona 22
Boston 21
Naaldwijk 21
Brandenburg 19
Hangzhou 19
St Petersburg 19
Changchun 18
Hanoi 18
Shanghai 17
Auburn Hills 16
Gelsenkirchen 16
London 16
Mexico City 16
Orem 16
Johannesburg 15
Kocaeli 15
Atlanta 14
San Mateo 14
Chennai 13
Frankfurt am Main 13
Manchester 13
Norwalk 13
Vienna 13
Bremen 11
Chicago 11
Houston 11
Lanzhou 11
Phoenix 11
Padova 9
Saint Petersburg 9
Zhengzhou 9
Jinan 8
Luxembourg 8
Shenzhen 8
Amsterdam 7
Ankara 7
Bexley 7
Dronten 7
Gragnano 7
New Delhi 7
Ningbo 7
Redmond 7
Totale 10.625
Salva come PNG Salva come JPEG
Nome #
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 159
EMI Analysis in High power Converters for Traction Application 156
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 149
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 147
Driving optimization of high voltage IGBT modules for traction application 147
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 146
A lumped charge model for GTOs suitable for circuit simulation 145
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 143
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 143
A general methodology for circuit simulation of high-voltage power devices 140
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 140
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 140
The high frequency behaviour of high voltage and current IGBT modules 139
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 139
A circuit model for GTOs based on lumped charge approach 139
An Integrated milli-metric Cell Actuator: Design and Test 138
Comparison among eligible topologies for MARX klystron modulators 138
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 137
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode 136
An On-Chip Non Invasive Integrated Current Sensing 135
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 135
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 134
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 134
A non-destructive technique for magnetic imaging of current distributions inside power modules 133
EMI Characterisation of high power IGBT modules For Traction Application 132
Cosmic ray effects on power MOSFET 132
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 132
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 131
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 131
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 130
Effects of heavy ion impact on power diodes 129
Advanced RBSOA Analysis for Advanced Power BJT's 129
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 129
PSPICE model for GTOs 128
A non-destructive technique for magnetic imaging of current distributions inside power modules 128
MAGFET Based Current Sensing for Power Integrated Circuit 127
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 127
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 127
Perspective Performances of MOS-Gated GTO in High-Power Applications 125
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 124
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 124
Developments on DC/DC converters for the LHC experiment upgrades 124
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 123
Non-destructive tester for single event burnout of power diodes 123
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 123
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 123
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 123
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 122
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 122
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 122
Experimental measurement of recombination lifetime in proton irradiated power devices 121
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 120
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 120
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 120
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 120
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 119
Series Connection of High Power IGBT modules for traction applications 118
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 117
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 117
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions 117
The robustness of series-connected high power IGBT modules 117
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 117
IGBT Modules Robustness During Turn-Off Commutation 116
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 115
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 115
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 114
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation 114
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 114
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 114
High Voltage, High Performance Switch using Series Connected IGBTs 112
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 112
Reliability tests of power IGBTs for railway traction 112
Series connection of IGBTs in hard-switching applications 112
IGBT RBSOA non-destructive testing methods: Analysis and discussion 112
Power converters for future LHC experiments 112
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 111
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 111
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 111
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 111
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 111
High voltage bipolar mode JFET with normally-Off characteristics 110
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 110
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 110
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 109
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 109
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 109
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 108
An On-Chip Non Invasive Integrated Current Sensing 108
The Reliability of New Generation Power MOSFETs in Radiation Environment 108
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 107
Investigation of MOSFET failure in soft-switching conditions 107
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 107
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 107
Experimental study of power MOSFET’s gate damage in radiation environment 107
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 106
Non Destructive SOA Testing of Power Modules (Invited) 106
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 105
BMFET vs BJT in reverse bias safe operations 105
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 105
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 105
Totale 12.282
Salva come PNG Salva come JPEG
Categoria #
all - tutte 78.639
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.639
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021781 0 0 0 0 0 200 10 142 32 174 58 165
2021/20221.412 15 8 19 104 96 9 98 89 339 4 224 407
2022/20234.890 345 431 220 315 309 916 2 271 1.909 7 74 91
2023/20241.001 105 64 46 32 32 162 115 111 145 61 2 126
2024/20252.532 85 64 176 61 235 27 342 140 824 15 360 203
2025/20262.903 411 826 221 538 794 113 0 0 0 0 0 0
Totale 17.339