IRIS
BUSATTO, Giovanni
 Distribuzione geografica
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Continente #
EU - Europa 45.765
NA - Nord America 8.457
AS - Asia 4.478
Continente sconosciuto - Info sul continente non disponibili 666
SA - Sud America 267
AF - Africa 54
OC - Oceania 10
Totale 59.697
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Nazione #
SE - Svezia 40.202
US - Stati Uniti d'America 8.306
CN - Cina 1.692
IE - Irlanda 1.647
SG - Singapore 1.303
DE - Germania 863
RU - Federazione Russa 760
IT - Italia 725
UA - Ucraina 718
TR - Turchia 441
HK - Hong Kong 357
IN - India 284
GB - Regno Unito 271
FI - Finlandia 206
BR - Brasile 181
VN - Vietnam 172
FR - Francia 106
CA - Canada 81
BD - Bangladesh 71
BE - Belgio 66
NL - Olanda 54
PL - Polonia 47
MX - Messico 45
JP - Giappone 43
AR - Argentina 33
EU - Europa 26
ES - Italia 25
ZA - Sudafrica 20
AT - Austria 18
PK - Pakistan 17
EC - Ecuador 15
IQ - Iraq 15
MA - Marocco 14
CL - Cile 10
ID - Indonesia 10
MY - Malesia 10
VE - Venezuela 10
DK - Danimarca 9
SA - Arabia Saudita 9
AU - Australia 8
LT - Lituania 8
LU - Lussemburgo 8
UZ - Uzbekistan 8
CO - Colombia 7
AE - Emirati Arabi Uniti 6
CZ - Repubblica Ceca 6
HU - Ungheria 5
KZ - Kazakistan 5
PA - Panama 5
CR - Costa Rica 4
DZ - Algeria 4
IL - Israele 4
JM - Giamaica 4
KE - Kenya 4
KG - Kirghizistan 4
KW - Kuwait 4
NP - Nepal 4
PE - Perù 4
TN - Tunisia 4
TW - Taiwan 4
AZ - Azerbaigian 3
EG - Egitto 3
ET - Etiopia 3
GR - Grecia 3
GT - Guatemala 3
JO - Giordania 3
RO - Romania 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
AL - Albania 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
EE - Estonia 2
HN - Honduras 2
LV - Lettonia 2
OM - Oman 2
PH - Filippine 2
PY - Paraguay 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AM - Armenia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BY - Bielorussia 1
DM - Dominica 1
GA - Gabon 1
GE - Georgia 1
IM - Isola di Man 1
LB - Libano 1
MK - Macedonia 1
NI - Nicaragua 1
NO - Norvegia 1
PW - Palau 1
RS - Serbia 1
SV - El Salvador 1
TO - Tonga 1
Totale 59.057
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Città #
Stockholm 39.001
Dublin 1.645
Chandler 1.147
Council Bluffs 765
Singapore 759
Ashburn 645
San Jose 577
Jacksonville 532
The Dalles 486
Rome 446
Izmir 404
Hong Kong 352
Dallas 348
Nanjing 334
Beijing 275
Boardman 271
Los Angeles 170
Hefei 160
Ann Arbor 155
Moscow 146
Lawrence 144
Princeton 144
Brooklyn 143
Wilmington 131
New York 127
Woodbridge 123
Columbus 122
Nanchang 116
Dearborn 98
Ogden 97
Grafing 91
Pune 90
Cassino 87
Santa Clara 86
Seattle 83
Munich 73
Brussels 66
Inglewood 62
Phoenix 58
Kunming 56
Tianjin 56
Ho Chi Minh City 53
Hebei 52
Changsha 49
Des Moines 49
Helsinki 48
Orem 48
Shenyang 45
West Jordan 44
Orange 39
Hanoi 38
Tokyo 38
Warsaw 38
Jiaxing 37
Milan 35
San Francisco 32
São Paulo 32
Poplar 29
Toronto 29
Denver 28
Montreal 28
Mumbai 27
Chennai 25
Verona 25
Mexico City 24
Turku 23
Atlanta 22
Boston 22
Frankfurt am Main 21
Manchester 21
Naaldwijk 21
Hangzhou 20
Houston 20
Shanghai 20
St Petersburg 20
Brandenburg 19
London 19
Changchun 18
Johannesburg 18
Amsterdam 17
Auburn Hills 16
Chicago 16
Gelsenkirchen 16
New Delhi 16
Kocaeli 15
San Mateo 14
Norwalk 13
Vienna 13
Lanzhou 12
Bremen 11
Ankara 9
Haiphong 9
Naples 9
Padova 9
Querétaro 9
Saint Petersburg 9
Zhengzhou 9
Jinan 8
Luxembourg 8
Quito 8
Totale 52.093
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Nome #
EMI Analysis in High power Converters for Traction Application 2.043
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.033
The high frequency behaviour of high voltage and current IGBT modules 2.033
Driving optimization of high voltage IGBT modules for traction application 2.031
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 2.023
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.021
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.019
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.018
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.015
EMI Characterisation of high power IGBT modules For Traction Application 2.013
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 2.004
IGBT Modules Robustness During Turn-Off Commutation 2.003
Series Connection of High Power IGBT modules for traction applications 1.999
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 1.998
High Voltage, High Performance Switch using Series Connected IGBTs 1.992
The robustness of series-connected high power IGBT modules 1.991
Experimental characterisation of high efficiency resonant gate driver circuit 1.987
Investigation of MOSFET failure in soft-switching conditions 1.983
Innovative driving strategies for new generation high power igbt modules 1.976
All‐SiC 99.4%‐efficient three‐phase T‐type inverter with DC‐side common‐mode filter 1.948
Energy Efficient Architecture of Power Supply for Field Devices and Controllers of the RFI Computer-Based Interlocking 1.934
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 185
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 180
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 178
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 176
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 174
A lumped charge model for GTOs suitable for circuit simulation 170
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 170
Comparison among eligible topologies for MARX klystron modulators 169
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 167
A general methodology for circuit simulation of high-voltage power devices 165
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 163
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 162
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 162
An On-Chip Non Invasive Integrated Current Sensing 161
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode 160
A circuit model for GTOs based on lumped charge approach 160
Cosmic ray effects on power MOSFET 159
An Integrated milli-metric Cell Actuator: Design and Test 159
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 157
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 156
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 155
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 152
A non-destructive technique for magnetic imaging of current distributions inside power modules 151
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 151
Effects of heavy ion impact on power diodes 150
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 150
Non-destructive tester for single event burnout of power diodes 148
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 148
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 147
Advanced RBSOA Analysis for Advanced Power BJT's 147
A non-destructive technique for magnetic imaging of current distributions inside power modules 147
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 147
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 146
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 145
Perspective Performances of MOS-Gated GTO in High-Power Applications 145
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 145
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 143
PSPICE model for GTOs 142
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 142
MAGFET Based Current Sensing for Power Integrated Circuit 142
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 142
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 140
Experimental measurement of recombination lifetime in proton irradiated power devices 140
IGBT RBSOA non-destructive testing methods: Analysis and discussion 139
Developments on DC/DC converters for the LHC experiment upgrades 139
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 139
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 139
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 138
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 138
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 138
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation 137
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 137
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 135
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions 133
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 133
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 133
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 133
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 131
An On-Chip Non Invasive Integrated Current Sensing 131
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 130
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 129
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 129
Operation of SiC normally-off JFET at the edges of its safe operating area 128
The Reliability of New Generation Power MOSFETs in Radiation Environment 128
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 128
Non Destructive SOA Testing of Power Modules (Invited) 127
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 127
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 126
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 126
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 125
Reliability tests of power IGBTs for railway traction 125
Power converters for future LHC experiments 125
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 125
Experimental study of power MOSFET’s gate damage in radiation environment 125
High voltage bipolar mode JFET with normally-Off characteristics 124
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 124
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 124
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 124
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 124
Totale 53.458
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Categoria #
all - tutte 133.254
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 133.254
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.389 0 0 19 104 96 9 98 89 339 4 224 407
2022/20234.890 345 431 220 315 309 916 2 271 1.909 7 74 91
2023/20241.001 105 64 46 32 32 162 115 111 145 61 2 126
2024/20252.532 85 64 176 61 235 27 342 140 824 15 360 203
2025/202644.338 411 826 221 538 794 571 676 163 788 38.881 324 145
2026/2027923 494 287 142 0 0 0 0 0 0 0 0 0
Totale 59.697