IRIS
BUSATTO, Giovanni
 Distribuzione geografica
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Continente #
EU - Europa 5.451
NA - Nord America 4.228
AS - Asia 1.768
Continente sconosciuto - Info sul continente non disponibili 26
SA - Sud America 10
OC - Oceania 6
AF - Africa 2
Totale 11.491
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Nazione #
US - Stati Uniti d'America 4.206
IE - Irlanda 1.643
SE - Svezia 1.200
CN - Cina 960
DE - Germania 759
UA - Ucraina 709
IT - Italia 608
TR - Turchia 424
IN - India 195
SG - Singapore 167
GB - Regno Unito 158
FI - Finlandia 155
BE - Belgio 62
FR - Francia 56
NL - Olanda 32
EU - Europa 26
RU - Federazione Russa 23
CA - Canada 18
AT - Austria 11
DK - Danimarca 9
LU - Lussemburgo 8
AU - Australia 6
CL - Cile 5
PL - Polonia 4
TW - Taiwan 4
CZ - Repubblica Ceca 3
HK - Hong Kong 3
ID - Indonesia 3
JP - Giappone 3
KW - Kuwait 3
PA - Panama 3
SK - Slovacchia (Repubblica Slovacca) 3
VN - Vietnam 3
BR - Brasile 2
HU - Ungheria 2
MY - Malesia 2
RO - Romania 2
AR - Argentina 1
BY - Bielorussia 1
DZ - Algeria 1
EC - Ecuador 1
EG - Egitto 1
ES - Italia 1
IM - Isola di Man 1
JM - Giamaica 1
LV - Lettonia 1
PE - Perù 1
SA - Arabia Saudita 1
Totale 11.491
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Città #
Dublin 1.642
Chandler 1.147
Jacksonville 531
Rome 425
Izmir 404
Nanjing 334
Ann Arbor 155
Lawrence 144
Princeton 144
Ashburn 141
Wilmington 131
Woodbridge 123
Brooklyn 116
Nanchang 116
Singapore 105
Dearborn 98
Ogden 97
Boardman 95
Grafing 91
Pune 90
Beijing 89
Los Angeles 82
Seattle 72
Cassino 66
Brussels 62
Inglewood 61
Kunming 56
Tianjin 56
Hebei 52
Changsha 49
Shenyang 45
Des Moines 44
West Jordan 44
Orange 39
Jiaxing 36
Milan 31
New York 31
Helsinki 25
Verona 22
Naaldwijk 21
San Francisco 20
Brandenburg 19
Hangzhou 19
Changchun 18
Auburn Hills 16
Gelsenkirchen 16
Shanghai 16
Kocaeli 15
Toronto 15
San Mateo 14
Norwalk 13
Bremen 11
Lanzhou 11
Vienna 11
Padova 9
Saint Petersburg 9
Zhengzhou 9
Jinan 8
Luxembourg 8
Dronten 7
Ningbo 7
Redmond 7
Redwood City 7
Staten Island 7
Naples 6
Walnut 6
Falls Church 5
Guangzhou 5
Hefei 5
Copenhagen 4
Shenzhen 4
Tappahannock 4
Warsaw 4
Bratislava 3
Genoa 3
Haikou 3
Hsinchu 3
Kuwait City 3
New Delhi 3
Seveso 3
Shaoxing 3
Taizhou 3
Amsterdam 2
Cambridge 2
Carrara 2
Catania 2
Chandigarh 2
Dong Ket 2
Fuzhou 2
Grugliasco 2
Hyderabad 2
Jinhua 2
London 2
Melbourne 2
Mumbai 2
Munich 2
Ottawa 2
Parma 2
Salerno 2
Secaucus 2
Totale 7.510
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Nome #
The high frequency behaviour of high voltage and current IGBT modules 109
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 105
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 105
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 104
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 104
EMI Analysis in High power Converters for Traction Application 99
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 99
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 98
A general methodology for circuit simulation of high-voltage power devices 97
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 97
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 95
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 95
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 95
A lumped charge model for GTOs suitable for circuit simulation 95
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 94
Driving optimization of high voltage IGBT modules for traction application 94
An Integrated milli-metric Cell Actuator: Design and Test 94
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 94
Non-destructive tester for single event burnout of power diodes 94
MAGFET Based Current Sensing for Power Integrated Circuit 94
Comparison among eligible topologies for MARX klystron modulators 94
Effects of heavy ion impact on power diodes 93
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 93
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 93
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 93
Cosmic ray effects on power MOSFET 92
PSPICE model for GTOs 92
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 92
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 91
An On-Chip Non Invasive Integrated Current Sensing 91
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions 91
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 91
Perspective Performances of MOS-Gated GTO in High-Power Applications 91
EMI Characterisation of high power IGBT modules For Traction Application 90
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation 90
Reliability tests of power IGBTs for railway traction 90
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 90
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 89
Series Connection of High Power IGBT modules for traction applications 89
The robustness of series-connected high power IGBT modules 89
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 89
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 89
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 89
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 89
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 89
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 89
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 88
An On-Chip Non Invasive Integrated Current Sensing 88
Experimental measurement of recombination lifetime in proton irradiated power devices 87
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 86
A non-destructive technique for magnetic imaging of current distributions inside power modules 86
Series connection of IGBTs in hard-switching applications 86
Investigation of MOSFET failure in soft-switching conditions 86
IGBT RBSOA non-destructive testing methods: Analysis and discussion 86
High Voltage, High Performance Switch using Series Connected IGBTs 85
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 85
BMFET vs BJT in reverse bias safe operations 85
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 85
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 85
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 85
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 85
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode 84
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 84
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 84
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 84
The Reliability of New Generation Power MOSFETs in Radiation Environment 84
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 83
High voltage bipolar mode JFET with normally-Off characteristics 83
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 83
Magnetic field imaging of current distributions in IGBT power modules 83
A non-destructive technique for magnetic imaging of current distributions inside power modules 83
A circuit model for GTOs based on lumped charge approach 83
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 83
null 82
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 82
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 82
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 82
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 82
Experimental study of power MOSFET’s gate damage in radiation environment 82
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 81
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 81
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 81
Performance Analysis of a Bipolar Mode FET (BMFET) with normally Off characteristics 81
Developments on DC/DC converters for the LHC experiment upgrades 81
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 81
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 80
Non Destructive SOA Testing of Power Modules (Invited) 80
null 80
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 80
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 80
Innovative driving strategies for new generation high power igbt modules 79
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 79
The turn-off transient of the Bipolar Mode Field Effect Transistor 79
Advanced RBSOA Analysis for Advanced Power BJT's 79
Long term Reliability Testing of HV-IGBT modules in worst case traction operation 79
Operation of SiC normally-off JFET at the edges of its safe operating area 79
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 79
Thermal damage in SiC Schottky diodes induced by SE heavy ions 79
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 79
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 79
Totale 8.776
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Categoria #
all - tutte 48.636
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.636
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020853 0 0 10 129 16 229 84 145 38 38 160 4
2020/20211.257 146 6 143 171 10 200 10 142 32 174 58 165
2021/20221.412 15 8 19 104 96 9 98 89 339 4 224 407
2022/20234.890 345 431 220 315 309 916 2 271 1.909 7 74 91
2023/20241.001 105 64 46 32 32 162 115 111 145 61 2 126
2024/2025149 85 64 0 0 0 0 0 0 0 0 0 0
Totale 12.053