IRIS
BUSATTO, Giovanni
 Distribuzione geografica
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Continente #
EU - Europa 45.701
NA - Nord America 7.223
AS - Asia 4.318
SA - Sud America 257
AF - Africa 54
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 10
Totale 57.589
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Nazione #
SE - Svezia 40.202
US - Stati Uniti d'America 7.093
CN - Cina 1.650
IE - Irlanda 1.646
SG - Singapore 1.244
DE - Germania 863
RU - Federazione Russa 760
UA - Ucraina 716
IT - Italia 681
TR - Turchia 441
HK - Hong Kong 353
IN - India 284
GB - Regno Unito 267
FI - Finlandia 206
BR - Brasile 177
VN - Vietnam 167
FR - Francia 103
CA - Canada 72
BE - Belgio 66
NL - Olanda 52
PL - Polonia 47
MX - Messico 42
JP - Giappone 40
AR - Argentina 29
BD - Bangladesh 29
EU - Europa 26
ES - Italia 22
ZA - Sudafrica 20
AT - Austria 18
PK - Pakistan 17
EC - Ecuador 14
IQ - Iraq 14
MA - Marocco 14
ID - Indonesia 10
VE - Venezuela 10
CL - Cile 9
DK - Danimarca 9
SA - Arabia Saudita 9
AU - Australia 8
LT - Lituania 8
LU - Lussemburgo 8
MY - Malesia 8
UZ - Uzbekistan 8
CO - Colombia 7
AE - Emirati Arabi Uniti 6
CZ - Repubblica Ceca 6
HU - Ungheria 5
KZ - Kazakistan 5
DZ - Algeria 4
IL - Israele 4
JM - Giamaica 4
KE - Kenya 4
KG - Kirghizistan 4
KW - Kuwait 4
PA - Panama 4
PE - Perù 4
TN - Tunisia 4
TW - Taiwan 4
AZ - Azerbaigian 3
EG - Egitto 3
ET - Etiopia 3
JO - Giordania 3
RO - Romania 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
AL - Albania 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
EE - Estonia 2
NP - Nepal 2
OM - Oman 2
PH - Filippine 2
PY - Paraguay 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AM - Armenia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BY - Bielorussia 1
CR - Costa Rica 1
DM - Dominica 1
GA - Gabon 1
GE - Georgia 1
GR - Grecia 1
GT - Guatemala 1
IM - Isola di Man 1
LB - Libano 1
LV - Lettonia 1
NI - Nicaragua 1
NO - Norvegia 1
PW - Palau 1
TO - Tonga 1
Totale 57.589
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Città #
Stockholm 39.001
Dublin 1.645
Chandler 1.147
Singapore 751
Ashburn 610
Jacksonville 531
The Dalles 486
San Jose 476
Rome 435
Izmir 404
Hong Kong 348
Dallas 340
Nanjing 334
Boardman 271
Beijing 267
Los Angeles 162
Hefei 160
Ann Arbor 155
Moscow 146
Lawrence 144
Princeton 144
Brooklyn 141
Wilmington 131
Woodbridge 123
Nanchang 116
New York 114
Dearborn 98
Ogden 97
Grafing 91
Pune 90
Cassino 87
Seattle 81
Munich 73
Brussels 66
Santa Clara 65
Inglewood 62
Council Bluffs 58
Kunming 56
Tianjin 56
Hebei 52
Ho Chi Minh City 52
Changsha 49
Des Moines 49
Helsinki 48
Orem 45
Shenyang 45
West Jordan 44
Orange 39
Tokyo 38
Warsaw 38
Jiaxing 37
Hanoi 36
Milan 33
São Paulo 30
Poplar 29
Montreal 28
San Francisco 28
Denver 27
Mumbai 27
Chennai 25
Toronto 24
Turku 23
Boston 22
Mexico City 22
Verona 22
Frankfurt am Main 21
Manchester 21
Naaldwijk 21
Hangzhou 20
St Petersburg 20
Atlanta 19
Brandenburg 19
London 19
Changchun 18
Johannesburg 18
Amsterdam 17
Shanghai 17
Auburn Hills 16
Gelsenkirchen 16
Houston 16
New Delhi 16
Kocaeli 15
Chicago 14
Phoenix 14
San Mateo 14
Norwalk 13
Vienna 13
Bremen 11
Lanzhou 11
Ankara 9
Haiphong 9
Padova 9
Querétaro 9
Saint Petersburg 9
Zhengzhou 9
Jinan 8
Luxembourg 8
Naples 8
Shenzhen 8
Bexley 7
Totale 50.966
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Nome #
EMI Analysis in High power Converters for Traction Application 2.033
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.022
Driving optimization of high voltage IGBT modules for traction application 2.022
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 2.013
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.013
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.008
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.004
The high frequency behaviour of high voltage and current IGBT modules 2.004
EMI Characterisation of high power IGBT modules For Traction Application 2.000
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.000
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 1.995
IGBT Modules Robustness During Turn-Off Commutation 1.993
Series Connection of High Power IGBT modules for traction applications 1.986
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 1.986
The robustness of series-connected high power IGBT modules 1.982
High Voltage, High Performance Switch using Series Connected IGBTs 1.980
Investigation of MOSFET failure in soft-switching conditions 1.975
Experimental characterisation of high efficiency resonant gate driver circuit 1.971
Innovative driving strategies for new generation high power igbt modules 1.963
All‐SiC 99.4%‐efficient three‐phase T‐type inverter with DC‐side common‐mode filter 1.935
Energy Efficient Architecture of Power Supply for Field Devices and Controllers of the RFI Computer-Based Interlocking 1.923
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 173
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 169
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 162
A lumped charge model for GTOs suitable for circuit simulation 162
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 160
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 160
Comparison among eligible topologies for MARX klystron modulators 159
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 159
A general methodology for circuit simulation of high-voltage power devices 154
A circuit model for GTOs based on lumped charge approach 154
An On-Chip Non Invasive Integrated Current Sensing 150
An Integrated milli-metric Cell Actuator: Design and Test 150
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 149
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 148
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode 146
A non-destructive technique for magnetic imaging of current distributions inside power modules 145
Cosmic ray effects on power MOSFET 144
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 144
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 143
A non-destructive technique for magnetic imaging of current distributions inside power modules 143
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 143
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 142
Advanced RBSOA Analysis for Advanced Power BJT's 141
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 141
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 140
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 140
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 140
Effects of heavy ion impact on power diodes 139
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 139
Perspective Performances of MOS-Gated GTO in High-Power Applications 137
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 137
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 137
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 137
Experimental measurement of recombination lifetime in proton irradiated power devices 137
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 136
Non-destructive tester for single event burnout of power diodes 136
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 135
Developments on DC/DC converters for the LHC experiment upgrades 135
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 134
PSPICE model for GTOs 133
MAGFET Based Current Sensing for Power Integrated Circuit 133
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 133
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 132
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 132
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 130
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 129
IGBT RBSOA non-destructive testing methods: Analysis and discussion 129
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 128
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 128
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 127
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions 127
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 126
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 126
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 125
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 125
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation 124
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 123
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 123
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 122
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 122
The Reliability of New Generation Power MOSFETs in Radiation Environment 122
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 122
Power converters for future LHC experiments 121
Experimental study of power MOSFET’s gate damage in radiation environment 121
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 120
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 120
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 120
Non Destructive SOA Testing of Power Modules (Invited) 120
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 120
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 119
Operation of SiC normally-off JFET at the edges of its safe operating area 119
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 119
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 118
An On-Chip Non Invasive Integrated Current Sensing 118
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 118
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 117
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 117
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 117
Reliability tests of power IGBTs for railway traction 116
Totale 52.449
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Categoria #
all - tutte 122.779
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 122.779
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021397 0 0 0 0 0 0 0 0 0 174 58 165
2021/20221.412 15 8 19 104 96 9 98 89 339 4 224 407
2022/20234.890 345 431 220 315 309 916 2 271 1.909 7 74 91
2023/20241.001 105 64 46 32 32 162 115 111 145 61 2 126
2024/20252.532 85 64 176 61 235 27 342 140 824 15 360 203
2025/202643.779 411 826 221 538 794 571 676 163 788 38.791 0 0
Totale 58.215