IRIS
BUSATTO, Giovanni
 Distribuzione geografica
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Continente #
EU - Europa 5.539
NA - Nord America 4.517
AS - Asia 1.868
Continente sconosciuto - Info sul continente non disponibili 26
SA - Sud America 12
OC - Oceania 6
AF - Africa 4
Totale 11.972
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Nazione #
US - Stati Uniti d'America 4.490
IE - Irlanda 1.644
SE - Svezia 1.201
CN - Cina 969
DE - Germania 781
UA - Ucraina 711
IT - Italia 630
TR - Turchia 424
SG - Singapore 251
IN - India 196
FI - Finlandia 179
GB - Regno Unito 165
BE - Belgio 65
FR - Francia 57
NL - Olanda 34
EU - Europa 26
RU - Federazione Russa 24
CA - Canada 23
AT - Austria 11
DK - Danimarca 9
LU - Lussemburgo 8
AU - Australia 6
CL - Cile 5
HK - Hong Kong 4
JP - Giappone 4
PL - Polonia 4
TW - Taiwan 4
BR - Brasile 3
CZ - Repubblica Ceca 3
ID - Indonesia 3
KW - Kuwait 3
MY - Malesia 3
PA - Panama 3
SK - Slovacchia (Repubblica Slovacca) 3
VN - Vietnam 3
AR - Argentina 2
EG - Egitto 2
HU - Ungheria 2
KG - Kirghizistan 2
RO - Romania 2
SA - Arabia Saudita 2
AL - Albania 1
BY - Bielorussia 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
ES - Italia 1
IM - Isola di Man 1
JM - Giamaica 1
LV - Lettonia 1
PE - Perù 1
ZA - Sudafrica 1
Totale 11.972
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Città #
Dublin 1.643
Chandler 1.147
Jacksonville 531
Rome 426
Izmir 404
Nanjing 334
Boardman 251
Singapore 183
Ann Arbor 155
Lawrence 144
Princeton 144
Ashburn 141
Wilmington 131
Woodbridge 123
Brooklyn 116
Nanchang 116
Dearborn 98
Ogden 97
Grafing 91
Pune 90
Beijing 89
Los Angeles 88
Cassino 79
Seattle 72
Brussels 65
Inglewood 61
Kunming 56
Tianjin 56
Hebei 52
Changsha 49
Helsinki 47
Shenyang 45
Des Moines 44
West Jordan 44
Orange 39
Jiaxing 36
Santa Clara 32
Milan 31
New York 31
Munich 23
Verona 22
Naaldwijk 21
San Francisco 20
Brandenburg 19
Hangzhou 19
Changchun 18
Shanghai 17
Toronto 17
Auburn Hills 16
Gelsenkirchen 16
Kocaeli 15
San Mateo 14
Norwalk 13
Bremen 11
Lanzhou 11
Vienna 11
Padova 9
Saint Petersburg 9
Zhengzhou 9
Jinan 8
Luxembourg 8
Dronten 7
Gragnano 7
Ningbo 7
Redmond 7
Redwood City 7
Staten Island 7
Guangzhou 6
Naples 6
Walnut 6
Falls Church 5
Hefei 5
Ottawa 5
Shenzhen 5
Copenhagen 4
London 4
Tappahannock 4
Warsaw 4
Bratislava 3
Genoa 3
Haikou 3
Hsinchu 3
Kuwait City 3
New Delhi 3
Seveso 3
Shaoxing 3
Taizhou 3
Amsterdam 2
Bishkek 2
Cambridge 2
Carrara 2
Catania 2
Chandigarh 2
Delhi 2
Dong Ket 2
Espoo 2
Frankfurt am Main 2
Fuzhou 2
Grugliasco 2
Hyderabad 2
Totale 7.856
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Nome #
The high frequency behaviour of high voltage and current IGBT modules 111
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 109
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 108
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 107
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 106
EMI Analysis in High power Converters for Traction Application 102
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 102
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 101
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 101
A lumped charge model for GTOs suitable for circuit simulation 101
A general methodology for circuit simulation of high-voltage power devices 100
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 100
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 99
Comparison among eligible topologies for MARX klystron modulators 99
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 98
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 98
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 97
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 97
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 97
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 97
Effects of heavy ion impact on power diodes 96
PSPICE model for GTOs 96
Driving optimization of high voltage IGBT modules for traction application 96
An Integrated milli-metric Cell Actuator: Design and Test 96
Non-destructive tester for single event burnout of power diodes 96
MAGFET Based Current Sensing for Power Integrated Circuit 96
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 95
An On-Chip Non Invasive Integrated Current Sensing 95
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 95
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 95
Cosmic ray effects on power MOSFET 94
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 94
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode 94
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 93
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions 93
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation 93
Perspective Performances of MOS-Gated GTO in High-Power Applications 93
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 92
EMI Characterisation of high power IGBT modules For Traction Application 92
Reliability tests of power IGBTs for railway traction 92
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 92
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 92
Series Connection of High Power IGBT modules for traction applications 91
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode 91
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 91
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 90
An On-Chip Non Invasive Integrated Current Sensing 90
The robustness of series-connected high power IGBT modules 90
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 89
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode 89
A non-destructive technique for magnetic imaging of current distributions inside power modules 89
Series connection of IGBTs in hard-switching applications 89
IGBT RBSOA non-destructive testing methods: Analysis and discussion 89
Experimental measurement of recombination lifetime in proton irradiated power devices 89
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 88
Investigation of MOSFET failure in soft-switching conditions 88
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 88
High Voltage, High Performance Switch using Series Connected IGBTs 87
BMFET vs BJT in reverse bias safe operations 87
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 87
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 87
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 87
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 87
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 87
The Reliability of New Generation Power MOSFETs in Radiation Environment 87
A non-destructive technique for magnetic imaging of current distributions inside power modules 87
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 87
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 86
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 86
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 86
A circuit model for GTOs based on lumped charge approach 86
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 85
High voltage bipolar mode JFET with normally-Off characteristics 85
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 85
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 85
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 85
Magnetic field imaging of current distributions in IGBT power modules 84
Developments on DC/DC converters for the LHC experiment upgrades 84
Experimental study of power MOSFET’s gate damage in radiation environment 84
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 83
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 83
IGBT Modules Robustness During Turn-Off Commutation 83
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 83
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 83
Performance Analysis of a Bipolar Mode FET (BMFET) with normally Off characteristics 83
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 83
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 83
null 82
The turn-off transient of the Bipolar Mode Field Effect Transistor 82
Advanced RBSOA Analysis for Advanced Power BJT's 82
Non Destructive SOA Testing of Power Modules (Invited) 82
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 82
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 82
Innovative driving strategies for new generation high power igbt modules 81
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 81
Long term Reliability Testing of HV-IGBT modules in worst case traction operation 81
Operation of SiC normally-off JFET at the edges of its safe operating area 81
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 81
Thermal damage in SiC Schottky diodes induced by SE heavy ions 81
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 81
Totale 9.055
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Categoria #
all - tutte 56.301
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.301
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020698 0 0 0 0 0 229 84 145 38 38 160 4
2020/20211.257 146 6 143 171 10 200 10 142 32 174 58 165
2021/20221.412 15 8 19 104 96 9 98 89 339 4 224 407
2022/20234.890 345 431 220 315 309 916 2 271 1.909 7 74 91
2023/20241.001 105 64 46 32 32 162 115 111 145 61 2 126
2024/2025643 85 64 176 61 235 22 0 0 0 0 0 0
Totale 12.547