BUSATTO, Giovanni
BUSATTO, Giovanni
Dipartimento di Ingegneria Elettrica e dell'Informazione "Maurizio Scarano"
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET
2008-01-01 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET
2008-01-01 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A circuit model for GTOs based on lumped charge approach
1998-01-01 Iannuzzo, Francesco; Busatto, Giovanni
A general methodology for circuit simulation of high-voltage power devices
2000-01-01 Iannuzzo, Francesco; Busatto, Giovanni
A Hybrid Modulation Technique for Voltage Regulation in LLC Converters in the Presence of Transformer Parasitic Capacitance
2022-01-01 Palazzo, Simone; Busatto, Giovanni; De Santis, Enzo; Giacomobono, Roberto; Di Ruzza, Dario; Panariello, Giuseppe
A lumped charge model for GTOs suitable for circuit simulation
1999-01-01 Iannuzzo, Francesco; Busatto, Giovanni
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs
2011-01-01 Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
A non-destructive technique for magnetic imaging of current distributions inside power modules
2000-01-01 Pepe, G. P.; Ruosi, A.; Valentino, M.; Peluso, G.; Busatto, Giovanni; Migliore, Marco Donald
A non-destructive technique for magnetic imaging of current distributions inside power modules
1999-01-01 Pepe, G. P.; Busatto, Giovanni; Ruosi, A.; Valentino, M.; Peluso, G.
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs
2007-01-01 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies
2021-01-01 Marciano, D.; Palazzo, S.; Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F.
A time-resolved IBICC experiment using the IEEM of the SIRAD facility
2012-01-01 L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode
1997-01-01 Busatto, Giovanni; Persiano, G. V.; Strollo, A.; Spirito, P.
Advanced RBSOA Analysis for Advanced Power BJT's
1996-01-01 Busatto, Giovanni; L., Fratelli; A., Patti
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization
2021-01-01 Abbate, C.; Colella, L.; Di Folco, R.; Busatto, G.; Martano, E.; Palazzo, S.; Sanseverino, A.; Velardi, F.
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
An Integrated milli-metric Cell Actuator: Design and Test
2001-01-01 Busatto, Giovanni; DI STEFANO, Roberto; M., Scarano
An On-Chip Non Invasive Integrated Current Sensing
2002-01-01 Busatto, Giovanni; La, Capruccia; Iannuzzo, Velardi; Roncella,
An On-Chip Non Invasive Integrated Current Sensing
2002-01-01 Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure
2004-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET | 1-gen-2008 | A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò | |
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET | 1-gen-2008 | A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò | |
A circuit model for GTOs based on lumped charge approach | 1-gen-1998 | Iannuzzo, Francesco; Busatto, Giovanni | |
A general methodology for circuit simulation of high-voltage power devices | 1-gen-2000 | Iannuzzo, Francesco; Busatto, Giovanni | |
A Hybrid Modulation Technique for Voltage Regulation in LLC Converters in the Presence of Transformer Parasitic Capacitance | 1-gen-2022 | Palazzo, Simone; Busatto, Giovanni; De Santis, Enzo; Giacomobono, Roberto; Di Ruzza, Dario; Panariello, Giuseppe | |
A lumped charge model for GTOs suitable for circuit simulation | 1-gen-1999 | Iannuzzo, Francesco; Busatto, Giovanni | |
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs | 1-gen-2011 | Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery | |
A non-destructive technique for magnetic imaging of current distributions inside power modules | 1-gen-2000 | Pepe, G. P.; Ruosi, A.; Valentino, M.; Peluso, G.; Busatto, Giovanni; Migliore, Marco Donald | |
A non-destructive technique for magnetic imaging of current distributions inside power modules | 1-gen-1999 | Pepe, G. P.; Busatto, Giovanni; Ruosi, A.; Valentino, M.; Peluso, G. | |
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs | 1-gen-2007 | Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina | |
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies | 1-gen-2021 | Marciano, D.; Palazzo, S.; Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. | |
A time-resolved IBICC experiment using the IEEM of the SIRAD facility | 1-gen-2012 | L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery | |
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode | 1-gen-1997 | Busatto, Giovanni; Persiano, G. V.; Strollo, A.; Spirito, P. | |
Advanced RBSOA Analysis for Advanced Power BJT's | 1-gen-1996 | Busatto, Giovanni; L., Fratelli; A., Patti | |
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization | 1-gen-2021 | Abbate, C.; Colella, L.; Di Folco, R.; Busatto, G.; Martano, E.; Palazzo, S.; Sanseverino, A.; Velardi, F. | |
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata | |
An Integrated milli-metric Cell Actuator: Design and Test | 1-gen-2001 | Busatto, Giovanni; DI STEFANO, Roberto; M., Scarano | |
An On-Chip Non Invasive Integrated Current Sensing | 1-gen-2002 | Busatto, Giovanni; La, Capruccia; Iannuzzo, Velardi; Roncella, | |
An On-Chip Non Invasive Integrated Current Sensing | 1-gen-2002 | Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella | |
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure | 1-gen-2004 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori |