IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 7.387
NA - Nord America 4.337
AS - Asia 2.322
Continente sconosciuto - Info sul continente non disponibili 368
SA - Sud America 154
AF - Africa 28
OC - Oceania 3
Totale 14.599
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Nazione #
SE - Svezia 4.354
US - Stati Uniti d'America 4.255
IE - Irlanda 908
CN - Cina 863
SG - Singapore 696
DE - Germania 450
RU - Federazione Russa 433
IT - Italia 403
UA - Ucraina 364
TR - Turchia 224
HK - Hong Kong 185
IN - India 146
GB - Regno Unito 145
FI - Finlandia 118
BR - Brasile 98
VN - Vietnam 89
FR - Francia 70
CA - Canada 49
BD - Bangladesh 34
BE - Belgio 34
JP - Giappone 25
NL - Olanda 24
MX - Messico 23
PL - Polonia 21
AR - Argentina 18
EU - Europa 17
ES - Italia 15
EC - Ecuador 14
AT - Austria 10
ZA - Sudafrica 10
IQ - Iraq 9
CL - Cile 8
PK - Pakistan 8
SA - Arabia Saudita 8
LU - Lussemburgo 7
MA - Marocco 7
VE - Venezuela 6
DK - Danimarca 5
ID - Indonesia 5
LT - Lituania 5
UZ - Uzbekistan 5
CO - Colombia 4
MY - Malesia 4
GR - Grecia 3
HU - Ungheria 3
IL - Israele 3
PA - Panama 3
TN - Tunisia 3
UY - Uruguay 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AU - Australia 2
AZ - Azerbaigian 2
BY - Bielorussia 2
DZ - Algeria 2
EE - Estonia 2
GT - Guatemala 2
JM - Giamaica 2
KE - Kenya 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
PE - Perù 2
PH - Filippine 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
BF - Burkina Faso 1
BG - Bulgaria 1
BO - Bolivia 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EG - Egitto 1
GA - Gabon 1
IR - Iran 1
JO - Giordania 1
LV - Lettonia 1
MK - Macedonia 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PW - Palau 1
RE - Reunion 1
RS - Serbia 1
SV - El Salvador 1
Totale 14.248
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Città #
Stockholm 3.732
Dublin 907
Chandler 606
Singapore 386
Ashburn 339
San Jose 315
Council Bluffs 307
Jacksonville 260
The Dalles 244
Rome 225
Izmir 206
Dallas 194
Hong Kong 182
Nanjing 166
Beijing 152
Boardman 143
Ann Arbor 92
Los Angeles 89
Hefei 83
Moscow 80
Lawrence 77
Princeton 77
New York 71
Brooklyn 67
Wilmington 63
Cassino 61
Woodbridge 59
Nanchang 58
Dearborn 56
Columbus 55
Ogden 53
Munich 51
Santa Clara 45
Pune 42
Grafing 35
Inglewood 35
Seattle 35
Brussels 34
Helsinki 33
Hebei 28
Shenyang 28
Ho Chi Minh City 27
Orem 27
Tianjin 27
Orange 24
Kunming 22
São Paulo 22
Tokyo 22
Des Moines 21
Phoenix 21
Montreal 20
Warsaw 20
Changsha 18
Hanoi 17
Turku 17
Jiaxing 16
Mexico City 16
Mumbai 16
St Petersburg 16
San Francisco 15
Chennai 14
Hangzhou 14
Houston 14
Milan 14
Poplar 14
Toronto 14
Boston 13
Denver 13
Verona 13
Atlanta 11
London 11
Amsterdam 10
Assago 10
Changchun 10
Frankfurt am Main 10
Shanghai 10
Auburn Hills 9
Chicago 9
Johannesburg 8
Lanzhou 8
Manchester 8
Padova 8
Brandenburg 7
Bremen 7
Gelsenkirchen 7
Luxembourg 7
New Delhi 7
Quito 7
Redwood City 7
San Mateo 7
Staten Island 7
Vienna 7
Ankara 6
Lappeenranta 6
Norwalk 6
Nuremberg 6
Ottawa 6
Walnut 6
Bexley 5
Caracas 5
Totale 10.516
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Nome #
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.033
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.021
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 185
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 180
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 178
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 171
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 167
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 166
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 163
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 162
An On-Chip Non Invasive Integrated Current Sensing 161
Cosmic ray effects on power MOSFET 159
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 156
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 155
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 154
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 151
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 148
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 146
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 146
Non-destructive tester for single event burnout of power diodes 145
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 145
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 144
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 142
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 140
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 139
MAGFET Based Current Sensing for Power Integrated Circuit 139
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 139
Developments on DC/DC converters for the LHC experiment upgrades 139
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 139
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 139
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 136
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 135
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 135
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 133
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 132
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 131
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 130
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 129
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 129
The Reliability of New Generation Power MOSFETs in Radiation Environment 128
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 128
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 125
Power converters for future LHC experiments 125
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 125
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 125
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 124
Experimental study of power MOSFET’s gate damage in radiation environment 124
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 123
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 123
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 123
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 122
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 121
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 120
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 120
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 118
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 118
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 118
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 118
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 117
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 117
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 116
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 116
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 115
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 114
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 113
Thermal damage in SiC Schottky diodes induced by SE heavy ions 112
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 112
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 111
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 109
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 109
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 108
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 108
Design and realization of a 200 A low-cost high-side switch for automotive applications 106
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 100
Turn-off instabilities in large area IGBTs 97
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 94
Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge 93
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 92
Heavy ions induced single event gate damages in medium voltage power MOSFET 84
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An Ultra-Fast Overcurrent Protection Circuit Based on SMD Shunt Resistors for Wide Band-Gap Devices 65
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Multi-Objective Design of a Bidirectional DC-DC Converter for Battery-Powered Locomotive 50
Testing Integrated COTS DC/DC Converters in Hostile Environment 36
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 33
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 28
Optimal IMC-Based Control Design of a 3-Phase Buck Power Factor Correction Converter 17
The behaviour of 350 V GaN HEMTs during heavy ion irradiations 14
Burnout susceptibility of silicon power diodes when exposed to 14 MeV neutrons 13
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A Simple and Accurate Software Technique for the Dynamic Measurement of the Current in Fast Switching Devices using a Resistive Shunt 2
Totale 14.599
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Categoria #
all - tutte 52.998
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 52.998
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022671 0 0 9 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024499 54 31 28 10 18 86 67 48 78 12 1 66
2024/20251.418 47 31 99 43 127 17 173 81 479 13 187 121
2025/20266.611 222 461 119 311 409 304 368 82 153 3.957 165 60
2026/2027362 220 142 0 0 0 0 0 0 0 0 0 0
Totale 14.599