IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 3.570
NA - Nord America 3.229
AS - Asia 1.931
SA - Sud America 107
Continente sconosciuto - Info sul continente non disponibili 17
AF - Africa 15
OC - Oceania 3
Totale 8.872
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Nazione #
US - Stati Uniti d'America 3.172
IE - Irlanda 907
CN - Cina 785
SE - Svezia 630
SG - Singapore 540
DE - Germania 447
RU - Federazione Russa 409
IT - Italia 380
UA - Ucraina 363
TR - Turchia 220
HK - Hong Kong 156
GB - Regno Unito 138
IN - India 123
FI - Finlandia 117
BR - Brasile 71
FR - Francia 62
VN - Vietnam 57
CA - Canada 40
BE - Belgio 34
EU - Europa 17
PL - Polonia 17
NL - Olanda 16
JP - Giappone 14
AR - Argentina 13
MX - Messico 12
ES - Italia 11
AT - Austria 10
ZA - Sudafrica 9
BD - Bangladesh 8
EC - Ecuador 8
CL - Cile 7
LU - Lussemburgo 7
DK - Danimarca 5
SA - Arabia Saudita 4
HU - Ungheria 3
ID - Indonesia 3
IL - Israele 3
IQ - Iraq 3
LT - Lituania 3
PK - Pakistan 3
VE - Venezuela 3
AE - Emirati Arabi Uniti 2
AU - Australia 2
BY - Bielorussia 2
DZ - Algeria 2
KW - Kuwait 2
MA - Marocco 2
MY - Malesia 2
PA - Panama 2
PE - Perù 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
UY - Uruguay 2
UZ - Uzbekistan 2
AL - Albania 1
BF - Burkina Faso 1
BG - Bulgaria 1
CO - Colombia 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EE - Estonia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LV - Lettonia 1
NI - Nicaragua 1
PW - Palau 1
TN - Tunisia 1
Totale 8.872
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Città #
Dublin 907
Chandler 606
Singapore 301
Jacksonville 260
Rome 224
Izmir 206
Ashburn 192
Dallas 187
The Dalles 170
Nanjing 166
Hong Kong 153
Boardman 143
Beijing 142
Ann Arbor 92
Hefei 83
Los Angeles 78
Lawrence 77
Princeton 77
Brooklyn 64
Wilmington 63
Cassino 61
New York 59
Woodbridge 59
Moscow 58
Nanchang 58
Dearborn 56
Ogden 53
Munich 51
Pune 42
Grafing 35
Inglewood 35
Brussels 34
Seattle 34
Helsinki 33
Santa Clara 33
Hebei 28
Shenyang 28
Tianjin 27
Orange 24
Ho Chi Minh City 23
Kunming 22
Council Bluffs 21
Des Moines 20
Changsha 18
São Paulo 17
Turku 17
Jiaxing 16
Montreal 16
Warsaw 16
St Petersburg 15
Hangzhou 14
Milan 14
Mumbai 13
Boston 12
Poplar 12
San Francisco 12
Tokyo 12
Toronto 12
Verona 11
Assago 10
Changchun 10
Denver 10
Hanoi 10
London 10
Mexico City 10
Shanghai 10
Auburn Hills 9
Atlanta 8
Chennai 8
Johannesburg 8
Padova 8
Stockholm 8
Brandenburg 7
Bremen 7
Frankfurt am Main 7
Gelsenkirchen 7
Houston 7
Lanzhou 7
Luxembourg 7
Manchester 7
Orem 7
Redwood City 7
San Mateo 7
Vienna 7
Chicago 6
Norwalk 6
Nuremberg 6
Staten Island 6
Walnut 6
Ankara 5
Bexley 5
Dronten 5
Lappeenranta 5
Ottawa 5
Amsterdam 4
City of London 4
Copenhagen 4
Kocaeli 4
Orta di Atella 4
Phoenix 4
Totale 5.594
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Nome #
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 160
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 149
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 148
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 146
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 145
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 141
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 139
An On-Chip Non Invasive Integrated Current Sensing 135
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 134
Cosmic ray effects on power MOSFET 132
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 132
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 131
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 131
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 129
MAGFET Based Current Sensing for Power Integrated Circuit 127
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 127
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 125
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 124
Developments on DC/DC converters for the LHC experiment upgrades 124
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 123
Non-destructive tester for single event burnout of power diodes 123
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 123
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 123
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 122
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 121
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 120
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 120
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 120
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 119
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 118
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 117
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 116
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 115
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 114
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 114
Power converters for future LHC experiments 112
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 111
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 111
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 111
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 110
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 109
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 109
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 109
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 108
The Reliability of New Generation Power MOSFETs in Radiation Environment 108
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 107
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 107
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 107
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 107
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 107
Experimental study of power MOSFET’s gate damage in radiation environment 107
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 105
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 105
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 105
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 105
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 104
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 103
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 103
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 103
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 102
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 102
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 100
Thermal damage in SiC Schottky diodes induced by SE heavy ions 100
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 100
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 97
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 96
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 96
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 95
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 90
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 90
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 90
Design and realization of a 200 A low-cost high-side switch for automotive applications 87
Turn-off instabilities in large area IGBTs 86
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 82
null 82
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 79
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 79
null 78
Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge 76
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 72
Heavy ions induced single event gate damages in medium voltage power MOSFET 72
null 65
An Ultra-Fast Overcurrent Protection Circuit Based on SMD Shunt Resistors for Wide Band-Gap Devices 35
Multi-Objective Design of a Bidirectional DC-DC Converter for Battery-Powered Locomotive 26
Testing Integrated COTS DC/DC Converters in Hostile Environment 26
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 23
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 21
Totale 9.207
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Categoria #
all - tutte 41.539
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 41.539
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021430 0 0 0 0 0 105 9 73 32 92 31 88
2021/2022678 7 0 9 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024499 54 31 28 10 18 86 67 48 78 12 1 66
2024/20251.418 47 31 99 43 127 17 173 81 479 13 187 121
2025/20261.581 222 461 119 311 409 59 0 0 0 0 0 0
Totale 9.207