IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 7.358
NA - Nord America 3.810
AS - Asia 2.239
SA - Sud America 150
AF - Africa 28
Continente sconosciuto - Info sul continente non disponibili 17
OC - Oceania 3
Totale 13.605
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Nazione #
SE - Svezia 4.354
US - Stati Uniti d'America 3.737
IE - Irlanda 907
CN - Cina 840
SG - Singapore 658
DE - Germania 450
RU - Federazione Russa 433
IT - Italia 385
UA - Ucraina 363
TR - Turchia 224
HK - Hong Kong 184
IN - India 146
GB - Regno Unito 144
FI - Finlandia 118
BR - Brasile 96
VN - Vietnam 87
FR - Francia 69
CA - Canada 45
BE - Belgio 34
JP - Giappone 24
NL - Olanda 23
MX - Messico 21
PL - Polonia 21
AR - Argentina 17
BD - Bangladesh 17
EU - Europa 17
EC - Ecuador 13
ES - Italia 13
AT - Austria 10
ZA - Sudafrica 10
IQ - Iraq 9
CL - Cile 8
PK - Pakistan 8
SA - Arabia Saudita 8
LU - Lussemburgo 7
MA - Marocco 7
VE - Venezuela 6
DK - Danimarca 5
ID - Indonesia 5
LT - Lituania 5
UZ - Uzbekistan 5
CO - Colombia 4
MY - Malesia 4
HU - Ungheria 3
IL - Israele 3
TN - Tunisia 3
UY - Uruguay 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AU - Australia 2
AZ - Azerbaigian 2
BY - Bielorussia 2
DZ - Algeria 2
EE - Estonia 2
JM - Giamaica 2
KE - Kenya 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
PA - Panama 2
PE - Perù 2
PH - Filippine 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
BF - Burkina Faso 1
BG - Bulgaria 1
BO - Bolivia 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EG - Egitto 1
GA - Gabon 1
GR - Grecia 1
GT - Guatemala 1
IR - Iran 1
JO - Giordania 1
LV - Lettonia 1
NI - Nicaragua 1
OM - Oman 1
PW - Palau 1
RE - Reunion 1
Totale 13.605
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Città #
Stockholm 3.732
Dublin 907
Chandler 606
Singapore 383
Ashburn 327
San Jose 262
Jacksonville 260
The Dalles 244
Rome 225
Izmir 206
Dallas 190
Hong Kong 181
Nanjing 166
Beijing 148
Boardman 143
Ann Arbor 92
Los Angeles 87
Hefei 83
Moscow 80
Lawrence 77
Princeton 77
Brooklyn 66
New York 64
Wilmington 63
Cassino 61
Woodbridge 59
Nanchang 58
Dearborn 56
Ogden 53
Munich 51
Pune 42
Grafing 35
Inglewood 35
Santa Clara 35
Seattle 35
Brussels 34
Helsinki 33
Hebei 28
Shenyang 28
Ho Chi Minh City 27
Orem 27
Tianjin 27
Council Bluffs 24
Orange 24
Kunming 22
Tokyo 22
Des Moines 21
São Paulo 21
Montreal 20
Warsaw 20
Changsha 18
Turku 17
Hanoi 16
Jiaxing 16
Mumbai 16
St Petersburg 16
Mexico City 15
Chennai 14
Hangzhou 14
Milan 14
Poplar 14
Boston 13
Denver 13
San Francisco 13
Toronto 12
Atlanta 11
London 11
Verona 11
Amsterdam 10
Assago 10
Changchun 10
Frankfurt am Main 10
Houston 10
Shanghai 10
Auburn Hills 9
Johannesburg 8
Manchester 8
Padova 8
Brandenburg 7
Bremen 7
Chicago 7
Gelsenkirchen 7
Lanzhou 7
Luxembourg 7
New Delhi 7
Phoenix 7
Redwood City 7
San Mateo 7
Vienna 7
Ankara 6
Lappeenranta 6
Norwalk 6
Nuremberg 6
Quito 6
Staten Island 6
Walnut 6
Bexley 5
Caracas 5
Dronten 5
Haiphong 5
Totale 10.053
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Nome #
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.022
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.008
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 173
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 169
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 162
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 160
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 160
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 159
An On-Chip Non Invasive Integrated Current Sensing 150
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 149
Cosmic ray effects on power MOSFET 144
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 144
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 143
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 143
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 142
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 141
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 140
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 140
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 139
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 137
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 137
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 136
Non-destructive tester for single event burnout of power diodes 136
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 135
Developments on DC/DC converters for the LHC experiment upgrades 135
MAGFET Based Current Sensing for Power Integrated Circuit 133
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 133
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 132
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 132
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 130
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 129
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 128
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 128
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 126
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 125
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 123
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 122
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 122
The Reliability of New Generation Power MOSFETs in Radiation Environment 122
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 122
Power converters for future LHC experiments 121
Experimental study of power MOSFET’s gate damage in radiation environment 121
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 120
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 120
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 120
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 119
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 119
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 118
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 118
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 117
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 117
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 115
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 114
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 114
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 114
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 114
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 113
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 112
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 112
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 111
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 111
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 111
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 109
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 109
Thermal damage in SiC Schottky diodes induced by SE heavy ions 109
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 107
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 105
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 104
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 103
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 101
Design and realization of a 200 A low-cost high-side switch for automotive applications 100
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 98
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 97
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 96
Turn-off instabilities in large area IGBTs 95
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 88
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 85
Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge 84
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Heavy ions induced single event gate damages in medium voltage power MOSFET 80
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Multi-Objective Design of a Bidirectional DC-DC Converter for Battery-Powered Locomotive 40
Testing Integrated COTS DC/DC Converters in Hostile Environment 33
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 30
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 25
Burnout susceptibility of silicon power diodes when exposed to 14 MeV neutrons 4
The behaviour of 350 V GaN HEMTs during heavy ion irradiations 1
Optimal IMC-Based Control Design of a 3-Phase Buck Power Factor Correction Converter 1
Totale 13.945
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Categoria #
all - tutte 47.883
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 47.883
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021211 0 0 0 0 0 0 0 0 0 92 31 88
2021/2022678 7 0 9 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024499 54 31 28 10 18 86 67 48 78 12 1 66
2024/20251.418 47 31 99 43 127 17 173 81 479 13 187 121
2025/20266.319 222 461 119 311 409 304 368 82 153 3.890 0 0
Totale 13.945