IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 2.950
NA - Nord America 2.350
AS - Asia 937
Continente sconosciuto - Info sul continente non disponibili 17
SA - Sud America 11
OC - Oceania 2
AF - Africa 1
Totale 6.268
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Nazione #
US - Stati Uniti d'America 2.335
IE - Irlanda 907
SE - Svezia 623
CN - Cina 484
DE - Germania 400
UA - Ucraina 361
IT - Italia 351
TR - Turchia 213
SG - Singapore 131
FI - Finlandia 96
IN - India 95
GB - Regno Unito 93
FR - Francia 36
BE - Belgio 34
EU - Europa 17
CA - Canada 13
NL - Olanda 11
RU - Federazione Russa 8
LU - Lussemburgo 7
AT - Austria 6
CL - Cile 5
DK - Danimarca 5
VN - Vietnam 3
AR - Argentina 2
AU - Australia 2
BY - Bielorussia 2
EC - Ecuador 2
HK - Hong Kong 2
JP - Giappone 2
KW - Kuwait 2
PL - Polonia 2
SK - Slovacchia (Repubblica Slovacca) 2
AL - Albania 1
BR - Brasile 1
EE - Estonia 1
ES - Italia 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
KG - Kirghizistan 1
LV - Lettonia 1
MY - Malesia 1
PA - Panama 1
PE - Perù 1
RO - Romania 1
SA - Arabia Saudita 1
ZA - Sudafrica 1
Totale 6.268
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Città #
Dublin 907
Chandler 606
Jacksonville 260
Rome 218
Izmir 206
Nanjing 166
Boardman 139
Singapore 93
Ann Arbor 92
Lawrence 77
Princeton 77
Ashburn 63
Wilmington 63
Woodbridge 59
Nanchang 58
Cassino 57
Dearborn 56
Ogden 53
Brooklyn 52
Beijing 45
Los Angeles 45
Pune 42
Grafing 35
Brussels 34
Inglewood 34
Helsinki 32
Seattle 31
Hebei 28
Shenyang 28
Tianjin 27
Orange 24
Kunming 22
Santa Clara 21
Des Moines 20
Munich 20
Changsha 18
Jiaxing 16
Hangzhou 14
Milan 14
New York 14
Verona 11
Changchun 10
San Francisco 10
Shanghai 10
Auburn Hills 9
Toronto 9
Padova 8
Brandenburg 7
Bremen 7
Gelsenkirchen 7
Lanzhou 7
Luxembourg 7
Redwood City 7
San Mateo 7
Norwalk 6
Staten Island 6
Vienna 6
Walnut 6
Dronten 5
Copenhagen 4
Kocaeli 4
Ottawa 4
Shenzhen 4
West Jordan 4
Zhengzhou 4
Foggia 3
Genoa 3
Guangzhou 3
Jinan 3
London 3
Naaldwijk 3
Redmond 3
Saint Petersburg 3
Tappahannock 3
Bratislava 2
Cambridge 2
Delhi 2
Dong Ket 2
Espoo 2
Gragnano 2
Grugliasco 2
Haikou 2
Kuwait City 2
Lappeenranta 2
Minsk 2
Mumbai 2
Ningbo 2
Salerno 2
Secaucus 2
Shaoxing 2
Warsaw 2
Almere Stad 1
Amsterdam 1
Bishkek 1
Budapest 1
Buenos Aires 1
Calderara Di Reno 1
Charlotte 1
Chengdu 1
Council Bluffs 1
Totale 4.105
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Nome #
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 108
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 106
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 102
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 101
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 101
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 100
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 98
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 98
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 97
Non-destructive tester for single event burnout of power diodes 96
MAGFET Based Current Sensing for Power Integrated Circuit 96
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 95
An On-Chip Non Invasive Integrated Current Sensing 95
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 95
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 95
Cosmic ray effects on power MOSFET 94
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 94
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 93
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 92
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 92
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 91
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 90
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 89
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 88
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 88
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 87
The Reliability of New Generation Power MOSFETs in Radiation Environment 87
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 87
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 87
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 86
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 86
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 86
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 85
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 85
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 85
Developments on DC/DC converters for the LHC experiment upgrades 84
Experimental study of power MOSFET’s gate damage in radiation environment 84
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 83
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 83
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 83
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 83
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 83
null 82
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 82
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 82
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 81
Thermal damage in SiC Schottky diodes induced by SE heavy ions 81
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 81
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 81
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 80
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 80
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 80
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 80
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 80
Power converters for future LHC experiments 79
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 79
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 79
null 78
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 78
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 77
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 77
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 77
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 74
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 73
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 70
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 70
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 69
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 69
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 66
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 66
null 65
Turn-off instabilities in large area IGBTs 64
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 63
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 62
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 61
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 55
Heavy ions induced single event gate damages in medium voltage power MOSFET 52
Design and realization of a 200 A low-cost high-side switch for automotive applications 44
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 35
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 31
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 23
Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge 17
Testing Integrated COTS DC/DC Converters in Hostile Environment 4
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 3
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 3
Totale 6.571
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Categoria #
all - tutte 29.616
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.616
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020359 0 0 0 0 0 120 40 74 18 21 83 3
2020/2021691 74 3 73 102 9 105 9 73 32 92 31 88
2021/2022678 7 0 9 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024499 54 31 28 10 18 86 67 48 78 12 1 66
2024/2025363 47 31 99 43 127 16 0 0 0 0 0 0
Totale 6.571