IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 7.371
NA - Nord America 4.007
AS - Asia 2.306
SA - Sud America 150
AF - Africa 28
Continente sconosciuto - Info sul continente non disponibili 17
OC - Oceania 3
Totale 13.882
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Nazione #
SE - Svezia 4.354
US - Stati Uniti d'America 3.929
IE - Irlanda 907
CN - Cina 859
SG - Singapore 684
DE - Germania 450
RU - Federazione Russa 433
IT - Italia 394
UA - Ucraina 364
TR - Turchia 224
HK - Hong Kong 185
IN - India 146
GB - Regno Unito 144
FI - Finlandia 118
BR - Brasile 96
VN - Vietnam 89
FR - Francia 69
CA - Canada 48
BD - Bangladesh 34
BE - Belgio 34
JP - Giappone 25
NL - Olanda 24
MX - Messico 22
PL - Polonia 21
AR - Argentina 17
EU - Europa 17
EC - Ecuador 13
ES - Italia 13
AT - Austria 10
ZA - Sudafrica 10
IQ - Iraq 9
CL - Cile 8
PK - Pakistan 8
SA - Arabia Saudita 8
LU - Lussemburgo 7
MA - Marocco 7
VE - Venezuela 6
DK - Danimarca 5
ID - Indonesia 5
LT - Lituania 5
UZ - Uzbekistan 5
CO - Colombia 4
MY - Malesia 4
GR - Grecia 3
HU - Ungheria 3
IL - Israele 3
PA - Panama 3
TN - Tunisia 3
UY - Uruguay 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AU - Australia 2
AZ - Azerbaigian 2
BY - Bielorussia 2
DZ - Algeria 2
EE - Estonia 2
JM - Giamaica 2
KE - Kenya 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
PE - Perù 2
PH - Filippine 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
BF - Burkina Faso 1
BG - Bulgaria 1
BO - Bolivia 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EG - Egitto 1
GA - Gabon 1
GT - Guatemala 1
IR - Iran 1
JO - Giordania 1
LV - Lettonia 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PW - Palau 1
RE - Reunion 1
Totale 13.882
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Città #
Stockholm 3.732
Dublin 907
Chandler 606
Singapore 384
Ashburn 334
San Jose 312
Jacksonville 260
The Dalles 244
Rome 225
Izmir 206
Dallas 194
Hong Kong 182
Nanjing 166
Beijing 151
Boardman 143
Council Bluffs 98
Ann Arbor 92
Los Angeles 89
Hefei 83
Moscow 80
Lawrence 77
Princeton 77
New York 71
Brooklyn 67
Wilmington 63
Cassino 61
Woodbridge 59
Nanchang 58
Dearborn 56
Ogden 53
Munich 51
Pune 42
Santa Clara 40
Grafing 35
Inglewood 35
Seattle 35
Brussels 34
Helsinki 33
Hebei 28
Shenyang 28
Ho Chi Minh City 27
Orem 27
Tianjin 27
Orange 24
Kunming 22
Tokyo 22
Des Moines 21
São Paulo 21
Montreal 20
Warsaw 20
Changsha 18
Hanoi 17
Turku 17
Jiaxing 16
Mexico City 16
Mumbai 16
St Petersburg 16
San Francisco 15
Chennai 14
Hangzhou 14
Milan 14
Poplar 14
Boston 13
Denver 13
Toronto 13
Houston 12
Verona 12
Atlanta 11
London 11
Amsterdam 10
Assago 10
Changchun 10
Frankfurt am Main 10
Shanghai 10
Auburn Hills 9
Johannesburg 8
Lanzhou 8
Manchester 8
Padova 8
Phoenix 8
Brandenburg 7
Bremen 7
Chicago 7
Gelsenkirchen 7
Luxembourg 7
New Delhi 7
Redwood City 7
San Mateo 7
Vienna 7
Ankara 6
Lappeenranta 6
Norwalk 6
Nuremberg 6
Ottawa 6
Quito 6
Staten Island 6
Walnut 6
Bexley 5
Caracas 5
Da Nang 5
Totale 10.219
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Nome #
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.027
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.016
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 176
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 175
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 171
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 164
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 162
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 161
An On-Chip Non Invasive Integrated Current Sensing 157
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 157
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 156
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 153
Cosmic ray effects on power MOSFET 151
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 149
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 148
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 147
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 147
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 144
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 143
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 143
Non-destructive tester for single event burnout of power diodes 138
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 138
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 138
Developments on DC/DC converters for the LHC experiment upgrades 137
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 137
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 136
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 136
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 135
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 135
MAGFET Based Current Sensing for Power Integrated Circuit 133
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 133
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 130
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 130
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 129
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 129
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 129
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 127
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 124
The Reliability of New Generation Power MOSFETs in Radiation Environment 123
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 122
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 122
Power converters for future LHC experiments 122
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 122
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 122
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 121
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 121
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 121
Experimental study of power MOSFET’s gate damage in radiation environment 121
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 120
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 119
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 118
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 118
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 117
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 116
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 114
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 114
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 114
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 114
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 113
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 113
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 113
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 112
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 112
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 112
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 111
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 111
Thermal damage in SiC Schottky diodes induced by SE heavy ions 110
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 109
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 107
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 105
Design and realization of a 200 A low-cost high-side switch for automotive applications 102
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 102
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 100
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 99
Turn-off instabilities in large area IGBTs 96
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 90
Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge 88
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 86
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Heavy ions induced single event gate damages in medium voltage power MOSFET 80
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An Ultra-Fast Overcurrent Protection Circuit Based on SMD Shunt Resistors for Wide Band-Gap Devices 58
Multi-Objective Design of a Bidirectional DC-DC Converter for Battery-Powered Locomotive 44
Testing Integrated COTS DC/DC Converters in Hostile Environment 34
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 30
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 25
Burnout susceptibility of silicon power diodes when exposed to 14 MeV neutrons 9
Optimal IMC-Based Control Design of a 3-Phase Buck Power Factor Correction Converter 8
The behaviour of 350 V GaN HEMTs during heavy ion irradiations 4
Totale 14.230
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Categoria #
all - tutte 50.630
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.630
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202188 0 0 0 0 0 0 0 0 0 0 0 88
2021/2022678 7 0 9 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024499 54 31 28 10 18 86 67 48 78 12 1 66
2024/20251.418 47 31 99 43 127 17 173 81 479 13 187 121
2025/20266.604 222 461 119 311 409 304 368 82 153 3.957 165 53
Totale 14.230