IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 7.549
NA - Nord America 4.841
AS - Asia 2.329
Continente sconosciuto - Info sul continente non disponibili 374
SA - Sud America 156
AF - Africa 30
OC - Oceania 3
Totale 15.282
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Nazione #
US - Stati Uniti d'America 4.703
SE - Svezia 4.354
IE - Irlanda 909
CN - Cina 866
SG - Singapore 696
IT - Italia 548
DE - Germania 450
RU - Federazione Russa 434
UA - Ucraina 364
TR - Turchia 224
HK - Hong Kong 188
GB - Regno Unito 153
IN - India 146
FI - Finlandia 118
BR - Brasile 99
VN - Vietnam 89
FR - Francia 72
CA - Canada 61
BD - Bangladesh 34
BE - Belgio 34
JP - Giappone 25
MX - Messico 25
NL - Olanda 24
PL - Polonia 21
AR - Argentina 18
EU - Europa 17
ES - Italia 15
EC - Ecuador 14
AT - Austria 10
ZA - Sudafrica 10
IQ - Iraq 9
CL - Cile 8
PK - Pakistan 8
SA - Arabia Saudita 8
LU - Lussemburgo 7
MA - Marocco 7
PR - Porto Rico 7
SV - El Salvador 7
CR - Costa Rica 6
GT - Guatemala 6
LT - Lituania 6
VE - Venezuela 6
CO - Colombia 5
DK - Danimarca 5
HN - Honduras 5
ID - Indonesia 5
NI - Nicaragua 5
RO - Romania 5
TT - Trinidad e Tobago 5
UZ - Uzbekistan 5
GP - Guadalupe 4
IL - Israele 4
MY - Malesia 4
GR - Grecia 3
HU - Ungheria 3
PA - Panama 3
TN - Tunisia 3
UY - Uruguay 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AU - Australia 2
AZ - Azerbaigian 2
BY - Bielorussia 2
CW - ???statistics.table.value.countryCode.CW??? 2
DZ - Algeria 2
EE - Estonia 2
JM - Giamaica 2
KE - Kenya 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
PE - Perù 2
PH - Filippine 2
SC - Seychelles 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
BF - Burkina Faso 1
BG - Bulgaria 1
BM - Bermuda 1
BO - Bolivia 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EG - Egitto 1
GA - Gabon 1
IR - Iran 1
JO - Giordania 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
NP - Nepal 1
OM - Oman 1
PW - Palau 1
RE - Reunion 1
RS - Serbia 1
SX - ???statistics.table.value.countryCode.SX??? 1
Totale 14.928
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Città #
Stockholm 3.732
Dublin 907
Chandler 606
Ashburn 463
San Jose 399
Singapore 386
Council Bluffs 356
Jacksonville 260
The Dalles 244
Rome 229
Izmir 206
Dallas 196
Hong Kong 184
Nanjing 166
Beijing 152
Boardman 144
Los Angeles 94
Ann Arbor 92
Hefei 83
Moscow 80
Lawrence 77
Princeton 77
New York 73
Brooklyn 71
Wilmington 63
Cassino 61
Milan 59
Woodbridge 59
Nanchang 58
Santa Clara 57
Dearborn 56
Columbus 55
Ogden 53
Munich 51
Pune 42
Seattle 36
Grafing 35
Inglewood 35
Brussels 34
Helsinki 33
Hebei 28
Phoenix 28
Shenyang 28
Ho Chi Minh City 27
Orem 27
Tianjin 27
Orange 24
Montreal 23
Kunming 22
São Paulo 22
Tokyo 22
Des Moines 21
Warsaw 20
Changsha 18
Hanoi 17
Mexico City 17
Turku 17
Jiaxing 16
Mumbai 16
San Francisco 16
St Petersburg 16
Denver 15
Atlanta 14
Chennai 14
Hangzhou 14
Houston 14
Miano 14
Poplar 14
Toronto 14
Verona 14
Boston 13
London 11
Amsterdam 10
Assago 10
Changchun 10
Chicago 10
Frankfurt am Main 10
Shanghai 10
Auburn Hills 9
Johannesburg 8
Lanzhou 8
Manchester 8
Naples 8
Padova 8
Brandenburg 7
Bremen 7
Gelsenkirchen 7
Luxembourg 7
New Delhi 7
Quito 7
Redwood City 7
San Mateo 7
Staten Island 7
Vienna 7
Ankara 6
Lappeenranta 6
Norwalk 6
Nuremberg 6
Ottawa 6
San José 6
Totale 10.882
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Nome #
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.037
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.028
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 191
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 186
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 184
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 179
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 179
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 173
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 170
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 167
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 167
An On-Chip Non Invasive Integrated Current Sensing 166
Cosmic ray effects on power MOSFET 164
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 161
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 160
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 156
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 156
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 156
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 155
Non-destructive tester for single event burnout of power diodes 154
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 154
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 153
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 152
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 150
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 150
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 149
MAGFET Based Current Sensing for Power Integrated Circuit 148
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 147
Developments on DC/DC converters for the LHC experiment upgrades 147
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 146
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 145
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 145
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 145
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 143
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 142
Experimental study of power MOSFET’s gate damage in radiation environment 141
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 137
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 135
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 135
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 134
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 134
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 133
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 132
The Reliability of New Generation Power MOSFETs in Radiation Environment 132
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 131
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 130
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 130
Power converters for future LHC experiments 130
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 130
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 129
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 129
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 127
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 127
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 126
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 125
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 125
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 124
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 124
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 124
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 124
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 123
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 123
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 122
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 121
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 121
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 121
Thermal damage in SiC Schottky diodes induced by SE heavy ions 120
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 117
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 117
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 116
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 116
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 116
Design and realization of a 200 A low-cost high-side switch for automotive applications 114
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 111
Turn-off instabilities in large area IGBTs 104
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 100
Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge 98
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 97
Heavy ions induced single event gate damages in medium voltage power MOSFET 89
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An Ultra-Fast Overcurrent Protection Circuit Based on SMD Shunt Resistors for Wide Band-Gap Devices 76
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Multi-Objective Design of a Bidirectional DC-DC Converter for Battery-Powered Locomotive 61
Testing Integrated COTS DC/DC Converters in Hostile Environment 42
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 37
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 34
Optimal IMC-Based Control Design of a 3-Phase Buck Power Factor Correction Converter 31
The behaviour of 350 V GaN HEMTs during heavy ion irradiations 30
Burnout susceptibility of silicon power diodes when exposed to 14 MeV neutrons 27
A Simple and Accurate Software Technique for the Dynamic Measurement of the Current in Fast Switching Devices using a Resistive Shunt 20
Totale 15.282
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Categoria #
all - tutte 56.160
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.160
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022662 0 0 0 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024499 54 31 28 10 18 86 67 48 78 12 1 66
2024/20251.418 47 31 99 43 127 17 173 81 479 13 187 121
2025/20266.611 222 461 119 311 409 304 368 82 153 3.957 165 60
2026/20271.045 220 155 254 416 0 0 0 0 0 0 0 0
Totale 15.282