IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 2.879
NA - Nord America 2.153
AS - Asia 793
Continente sconosciuto - Info sul continente non disponibili 17
SA - Sud America 8
OC - Oceania 2
Totale 5.852
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Nazione #
US - Stati Uniti d'America 2.142
IE - Irlanda 907
SE - Svezia 622
CN - Cina 474
DE - Germania 380
UA - Ucraina 361
IT - Italia 328
TR - Turchia 213
IN - India 94
GB - Regno Unito 90
FI - Finlandia 78
FR - Francia 35
BE - Belgio 32
EU - Europa 17
NL - Olanda 10
CA - Canada 9
RU - Federazione Russa 8
LU - Lussemburgo 7
AT - Austria 6
CL - Cile 5
DK - Danimarca 5
VN - Vietnam 3
AU - Australia 2
BY - Bielorussia 2
HK - Hong Kong 2
JP - Giappone 2
KW - Kuwait 2
PL - Polonia 2
SK - Slovacchia (Repubblica Slovacca) 2
AR - Argentina 1
EC - Ecuador 1
ES - Italia 1
HU - Ungheria 1
ID - Indonesia 1
IR - Iran 1
JM - Giamaica 1
LV - Lettonia 1
PA - Panama 1
PE - Perù 1
RO - Romania 1
SG - Singapore 1
Totale 5.852
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Città #
Dublin 907
Chandler 606
Jacksonville 260
Rome 218
Izmir 206
Nanjing 166
Ann Arbor 92
Lawrence 77
Princeton 77
Ashburn 63
Wilmington 63
Woodbridge 59
Nanchang 58
Dearborn 56
Ogden 53
Brooklyn 52
Cassino 49
Boardman 46
Beijing 45
Pune 42
Grafing 35
Inglewood 34
Brussels 32
Seattle 31
Hebei 28
Shenyang 28
Tianjin 27
Orange 24
Kunming 22
Des Moines 20
Changsha 18
Helsinki 16
Jiaxing 16
Hangzhou 14
Los Angeles 14
Milan 14
New York 14
Verona 11
Changchun 10
San Francisco 10
Shanghai 10
Auburn Hills 9
Toronto 8
Brandenburg 7
Bremen 7
Gelsenkirchen 7
Lanzhou 7
Luxembourg 7
Redwood City 7
San Mateo 7
Norwalk 6
Staten Island 6
Vienna 6
Walnut 6
Dronten 5
Copenhagen 4
Kocaeli 4
West Jordan 4
Zhengzhou 4
Foggia 3
Jinan 3
Naaldwijk 3
Redmond 3
Saint Petersburg 3
Shenzhen 3
Tappahannock 3
Bratislava 2
Cambridge 2
Dong Ket 2
Grugliasco 2
Guangzhou 2
Haikou 2
Kuwait City 2
Lappeenranta 2
Minsk 2
Mumbai 2
Ningbo 2
Salerno 2
Secaucus 2
Shaoxing 2
Warsaw 2
Almere Stad 1
Amsterdam 1
Budapest 1
Calderara Di Reno 1
Charlotte 1
Chengdu 1
Delhi 1
Euerdorf 1
Frankfurt am Main 1
Fuzhou 1
Hanoi 1
Harbin 1
Hefei 1
Hendon 1
Houston 1
Huntington 1
Hyderabad 1
Lima 1
Liverpool 1
Totale 3.804
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Nome #
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 102
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 101
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 97
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 96
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 94
Non-destructive tester for single event burnout of power diodes 93
Cosmic ray effects on power MOSFET 92
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 92
MAGFET Based Current Sensing for Power Integrated Circuit 92
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 92
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 91
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 91
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 91
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 90
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 89
An On-Chip Non Invasive Integrated Current Sensing 88
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 88
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 87
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 87
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 87
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 87
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 86
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 84
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 84
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 83
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 83
The Reliability of New Generation Power MOSFETs in Radiation Environment 83
null 82
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 82
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 82
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 82
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 81
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 81
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 81
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 81
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 81
Experimental study of power MOSFET’s gate damage in radiation environment 81
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 80
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 80
Developments on DC/DC converters for the LHC experiment upgrades 80
null 78
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 78
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 78
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 78
Thermal damage in SiC Schottky diodes induced by SE heavy ions 78
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 78
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 78
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 77
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 77
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 77
Power converters for future LHC experiments 76
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 76
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 76
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 76
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 76
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 75
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 74
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 74
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 74
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 73
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 71
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 69
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 69
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 66
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 65
null 65
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 65
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 65
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 62
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 61
Turn-off instabilities in large area IGBTs 60
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 59
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 59
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 53
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 53
Heavy ions induced single event gate damages in medium voltage power MOSFET 49
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 47
Design and realization of a 200 A low-cost high-side switch for automotive applications 42
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 28
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 20
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 1
Testing Integrated COTS DC/DC Converters in Hostile Environment 1
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 1
Totale 6.142
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Categoria #
all - tutte 22.298
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.298
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019282 0 0 0 0 0 0 0 0 0 0 68 214
2019/2020639 188 8 9 65 10 120 40 74 18 21 83 3
2020/2021691 74 3 73 102 9 105 9 73 32 92 31 88
2021/2022678 7 0 9 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024433 54 31 28 10 18 86 67 48 78 12 1 0
Totale 6.142