IRIS
VELARDI, Francesco
 Distribuzione geografica
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Continente #
EU - Europa 3.586
NA - Nord America 3.331
AS - Asia 2.007
SA - Sud America 115
Continente sconosciuto - Info sul continente non disponibili 17
AF - Africa 16
OC - Oceania 3
Totale 9.075
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Nazione #
US - Stati Uniti d'America 3.264
IE - Irlanda 907
CN - Cina 789
SE - Svezia 635
SG - Singapore 586
DE - Germania 447
RU - Federazione Russa 409
IT - Italia 380
UA - Ucraina 363
TR - Turchia 221
HK - Hong Kong 160
GB - Regno Unito 141
IN - India 127
FI - Finlandia 117
BR - Brasile 78
VN - Vietnam 69
FR - Francia 62
CA - Canada 44
BE - Belgio 34
PL - Polonia 21
JP - Giappone 18
MX - Messico 18
EU - Europa 17
NL - Olanda 17
AR - Argentina 13
ES - Italia 12
AT - Austria 10
ZA - Sudafrica 9
BD - Bangladesh 8
EC - Ecuador 8
CL - Cile 7
LU - Lussemburgo 7
DK - Danimarca 5
LT - Lituania 5
PK - Pakistan 4
SA - Arabia Saudita 4
VE - Venezuela 4
HU - Ungheria 3
ID - Indonesia 3
IL - Israele 3
IQ - Iraq 3
AE - Emirati Arabi Uniti 2
AU - Australia 2
BY - Bielorussia 2
DZ - Algeria 2
KW - Kuwait 2
MA - Marocco 2
MY - Malesia 2
PA - Panama 2
PE - Perù 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
UY - Uruguay 2
UZ - Uzbekistan 2
AL - Albania 1
BF - Burkina Faso 1
BG - Bulgaria 1
CO - Colombia 1
CZ - Repubblica Ceca 1
DM - Dominica 1
EE - Estonia 1
EG - Egitto 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LV - Lettonia 1
NI - Nicaragua 1
PW - Palau 1
TN - Tunisia 1
Totale 9.075
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Città #
Dublin 907
Chandler 606
Singapore 347
Jacksonville 260
Rome 224
Ashburn 209
Izmir 206
Dallas 187
The Dalles 181
Nanjing 166
Hong Kong 157
Boardman 143
Beijing 142
Ann Arbor 92
Los Angeles 87
Hefei 83
Lawrence 77
Princeton 77
Brooklyn 66
New York 63
Wilmington 63
Cassino 61
Woodbridge 59
Moscow 58
Nanchang 58
Dearborn 56
Ogden 53
Munich 51
Pune 42
Grafing 35
Inglewood 35
Seattle 35
Brussels 34
Santa Clara 34
Helsinki 33
Hebei 28
Shenyang 28
Tianjin 27
Ho Chi Minh City 24
Orange 24
Kunming 22
Council Bluffs 21
Des Moines 20
Montreal 20
São Paulo 20
Warsaw 20
Changsha 18
Turku 17
Jiaxing 16
Tokyo 16
St Petersburg 15
Hangzhou 14
Milan 14
Orem 14
Poplar 14
Boston 13
Denver 13
Hanoi 13
Mexico City 13
Mumbai 13
Stockholm 13
San Francisco 12
Toronto 12
Atlanta 11
Chennai 11
London 11
Verona 11
Assago 10
Changchun 10
Houston 10
Shanghai 10
Auburn Hills 9
San Jose 9
Johannesburg 8
Padova 8
Brandenburg 7
Bremen 7
Frankfurt am Main 7
Gelsenkirchen 7
Lanzhou 7
Luxembourg 7
Manchester 7
Redwood City 7
San Mateo 7
Vienna 7
Ankara 6
Chicago 6
Norwalk 6
Nuremberg 6
Phoenix 6
Staten Island 6
Walnut 6
Amsterdam 5
Bexley 5
Dronten 5
Lappeenranta 5
Ottawa 5
Querétaro 5
City of London 4
Copenhagen 4
Totale 5.749
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Nome #
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 162
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 153
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 151
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET 149
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET 148
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 144
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 143
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 137
An On-Chip Non Invasive Integrated Current Sensing 137
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 136
Cosmic ray effects on power MOSFET 135
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 134
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 132
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 132
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 131
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs 130
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 129
Non-destructive tester for single event burnout of power diodes 128
MAGFET Based Current Sensing for Power Integrated Circuit 128
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 127
Developments on DC/DC converters for the LHC experiment upgrades 126
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions 125
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 125
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure 124
Experimental Study of the Damages Created in the Gate Oxide of Medium Voltage Power MOSFET During Heavy Ions Irradiation 123
Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET 123
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 122
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 122
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 121
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 121
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET 121
Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation 120
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure 118
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure 116
Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET 115
Power converters for future LHC experiments 115
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 114
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 113
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs 113
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 113
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 112
Experimental study of power MOSFET’s gate damage in radiation environment 112
The Reliability of New Generation Power MOSFETs in Radiation Environment 111
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 111
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 110
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment 110
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 110
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment 109
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement 109
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET 109
Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET 109
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 108
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 108
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 108
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 107
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET 106
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 106
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 106
Identification and Compensation of Hysteresis for Magnetostrictive Actuators 106
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators 104
Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity 104
Thermal damage in SiC Schottky diodes induced by SE heavy ions 103
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs 102
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 101
Heavy Ions Induced Single Event Gate Damage in Medium Voltage Power MOSFET 99
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives 97
Latent Damages in Gate Oxide of Medium Voltage Power MOSFET 96
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet 96
Induced Damages in Power MOSFETs after Heavy Ions Irradiation 91
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 91
Design and realization of a 200 A low-cost high-side switch for automotive applications 90
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 90
Turn-off instabilities in large area IGBTs 88
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 85
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit 82
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The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET 80
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Short-Circuit Operation of a 650-V/60-A GaN-Based Half-Bridge 77
Role of Active Clamp Circuit in a DC/AC Isolated Converter based on the principle of Pulsating DC Link 73
Heavy ions induced single event gate damages in medium voltage power MOSFET 72
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An Ultra-Fast Overcurrent Protection Circuit Based on SMD Shunt Resistors for Wide Band-Gap Devices 39
Multi-Objective Design of a Bidirectional DC-DC Converter for Battery-Powered Locomotive 29
Testing Integrated COTS DC/DC Converters in Hostile Environment 28
The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET 23
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 22
Totale 9.410
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Categoria #
all - tutte 42.102
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 42.102
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021430 0 0 0 0 0 105 9 73 32 92 31 88
2021/2022678 7 0 9 42 38 2 39 52 164 2 106 217
2022/20232.648 189 242 114 163 162 488 2 144 1.063 5 40 36
2023/2024499 54 31 28 10 18 86 67 48 78 12 1 66
2024/20251.418 47 31 99 43 127 17 173 81 479 13 187 121
2025/20261.784 222 461 119 311 409 262 0 0 0 0 0 0
Totale 9.410