WYSS, JEFFERY
 Distribuzione geografica
Continente #
EU - Europa 5.694
NA - Nord America 4.131
AS - Asia 2.399
SA - Sud America 126
AF - Africa 26
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 4
Totale 12.386
Nazione #
US - Stati Uniti d'America 4.068
SE - Svezia 2.507
IE - Irlanda 976
CN - Cina 878
SG - Singapore 771
DE - Germania 589
UA - Ucraina 419
RU - Federazione Russa 389
IT - Italia 349
TR - Turchia 232
HK - Hong Kong 231
FI - Finlandia 150
IN - India 139
GB - Regno Unito 130
BR - Brasile 92
VN - Vietnam 62
FR - Francia 53
CA - Canada 32
AT - Austria 24
BE - Belgio 24
MX - Messico 24
NL - Olanda 22
JP - Giappone 20
PL - Polonia 20
AR - Argentina 13
BD - Bangladesh 13
ES - Italia 13
ZA - Sudafrica 11
IQ - Iraq 9
EC - Ecuador 8
RO - Romania 7
EU - Europa 6
IL - Israele 6
MA - Marocco 6
SA - Arabia Saudita 6
PK - Pakistan 5
UZ - Uzbekistan 5
AU - Australia 4
CO - Colombia 4
DK - Danimarca 4
LU - Lussemburgo 4
AE - Emirati Arabi Uniti 3
EG - Egitto 3
ID - Indonesia 3
JM - Giamaica 3
KE - Kenya 3
KW - Kuwait 3
UY - Uruguay 3
AL - Albania 2
DZ - Algeria 2
HU - Ungheria 2
KZ - Kazakistan 2
LT - Lituania 2
PT - Portogallo 2
VE - Venezuela 2
AZ - Azerbaigian 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
CL - Cile 1
CZ - Repubblica Ceca 1
DM - Dominica 1
DO - Repubblica Dominicana 1
IR - Iran 1
JO - Giordania 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
MY - Malesia 1
NP - Nepal 1
OM - Oman 1
PA - Panama 1
PE - Perù 1
PH - Filippine 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TL - Timor Orientale 1
TN - Tunisia 1
Totale 12.386
Città #
Stockholm 1.863
Dublin 975
Dallas 610
Chandler 550
Singapore 434
Jacksonville 305
Ashburn 301
San Jose 270
Hong Kong 229
Izmir 228
Rome 223
The Dalles 196
Nanjing 187
Boardman 152
Beijing 121
Munich 97
Moscow 96
Hefei 94
Lawrence 85
Princeton 85
Wilmington 84
Ann Arbor 80
Nanchang 76
Los Angeles 71
Woodbridge 69
New York 67
Helsinki 59
Brooklyn 58
Ogden 51
Grafing 50
Dearborn 43
Orem 42
Pune 39
Inglewood 38
Santa Clara 36
Seattle 36
Tianjin 36
Des Moines 30
Shenyang 29
Changsha 28
Orange 27
Brussels 24
Hebei 24
Bremen 22
Jiaxing 22
Brandenburg 20
Chennai 20
Kunming 20
Tokyo 20
Milan 18
Montreal 18
Warsaw 18
Cassino 17
Hanoi 17
Mumbai 17
Verona 16
Ho Chi Minh City 15
Manchester 15
Nuremberg 15
Denver 14
Frankfurt am Main 14
Poplar 14
São Paulo 14
Auburn Hills 13
Houston 13
Mexico City 13
Vienna 12
Council Bluffs 11
Johannesburg 11
Amsterdam 10
Boston 10
Chicago 10
London 10
Falls Church 9
Lappeenranta 9
Norwalk 9
San Francisco 9
Hangzhou 8
Phoenix 8
Guangzhou 7
Jinan 7
L’Aquila 7
New Delhi 7
St Petersburg 7
Shanghai 6
Toronto 6
Atlanta 5
Lanzhou 5
Legnaro 5
Ningbo 5
Querétaro 5
Saint Petersburg 5
Turku 5
Walnut 5
Zhengzhou 5
Assago 4
Belo Horizonte 4
Cambridge 4
Changchun 4
Copenhagen 4
Totale 8.821
Nome #
A novel sensor for ion electron emission microscopy. 2.002
Advanced proton imaging in computed tomography 260
Heavy-Ion Radiation Test on LTC1668 DAC 253
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 174
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 170
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 160
Charge Collection effiency of standard and oxygenated silicon microstrip detectors 156
Anomalous charge loss from floating-gate memory cells due to heavy ion irradiation 155
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure 150
CoolGAL: a Galinstan bathed Be fast neutron production target at the NEPIR facility 146
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 145
Accelerated wear-out of ultra-thin gate oxides after irradiation 144
Effects of heavy ion impact on power diodes 139
Detection Efficiency and Spatial Resolution of the SIRAD Ion Electron Emission Microscope 138
Effects of proton irradiation on glass filter substrates for the Rosetta mission 138
Experimental measurement of recombination lifetime in proton irradiated power devices 137
Non-destructive tester for single event burnout of power diodes 136
ARCADIA fully depleted CMOS MAPS development with LFoundry 110 nm CIS 134
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 134
Ion Impact Detection and Micromapping with a SDRAM for IEEM Diagnostics and Applications 133
A Neutron-induced Single Event Effects Facility at the 70 MeV Cyclotron of LNL-INFN 132
Secondary electron yield of Au and Al2O3 surfaces from swift heavy ion impacts in the 2.5-7.9 MeV/amu energy range 128
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure 128
Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16, 21, and 27 MeV protons 127
Observation of B^{+}→ψ(2S)K^{+} and B^{0}→ψ(2S)K^{*}(892)^{0} decays and measurements of B-meson branching fractions into J/ψ and ψ(2S) final states 126
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 126
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES 125
Ion-Induced Charge and Single-Event Burnout in Silicon Power UMOSFETs 124
Radiation-induced effects on the XAA1.2 ASIC chip for space application 123
The Reliability of New Generation Power MOSFETs in Radiation Environment 123
RADIATION DAMAGE OF STANDARD AND OXYGENATED SILICON DIODES IRRADIATIED BY 16-MEV AND 27-MEV PROTONS 121
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 120
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact 120
Radiation hardness of silicon detectors for high-energy physics applications 119
Secondary electron yield of Au and Al2O3 surfaces from swift heavy ion impact in the 2.5–7.9 MeV/amu energy range 119
The SPES project at the INFN- Laboratori Nazionali di Legnaro 119
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs 118
SIRAD: AN IRRADIATION FACILITY AT THE LNL TANDEM ACCELERATOR FOR RADIATION DAMAGE STUDIES ON SEMICONDUCTOR DETECTORS AND ELECTRONIC DEVICES AND SYSTEMS 118
LOW- AND HIGH-ENERGY PROTON IRRADIATIONS OF STANDARD AND OXYGENATED SILICON DIODES 118
Ion electron emission microscopy at SIRAD 118
Performance of the SIRAD ion electron emission microscope 118
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 118
Neutron irradiation effects on standard and oxygenated silicon diodes 117
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure 117
Silicon Detectors for gamma-ray and beta-spectroscopy 117
Single event upset studies on the CMS tracker APV25 readout chip 116
Position sensitive detectors for ion electron emission microscopy 115
RADIATION EFFECTS ON FLOATING-GATE MEMORY CELLS 114
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact 114
ANEM: A rotating composite target to produce an atmospheric-like neutron beam at the LNL SPES facility 114
THE FUTURE OF THE SIRAD SEE FACILITY: ION-ELECTRON EMISSION MISROSCOPY 113
CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results 113
Status of the ion electron emission microscope at the SIRAD single event facility 113
Calorimeter prototyping for the iMPACT project pCT scanner 113
Lithium ion-induced damage in silicon detectors 112
Silicon diode radiation hardening for high energy physics detectors 112
Radiation defects in neutron irradiated silicon with high oxygen concentrations 110
ION ELECTRON EMISSION MICROSCOPY AT THE SIRAD SINGLE EVENT FACILITY 110
ANEM: The future neutron production target for Single Event Effect studies at LNL 109
Proton irradiation effects on standard and oxygenated silicon diodes 108
Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors 108
Semiconductor detectors for neutron flux measurements 107
LePIX: first results from a novel monolithic pixel sensor 107
LOW FIELD LEAKAGE CURRENT AND SOFT BREAKDOWN IN ULTRA-THIN GATE OXIDES AFTER HEAVY ION, ELECTRONS OR X-RAY IRRADIATION 106
First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM 104
Measurement of the inclusive jet cross section inpp¯collisions ats=1.8TeV 104
THIN OXIDE DEGRADATION AFTER HIGH-ENERGY ION IRRADIATION 103
HEAVY ION IRRADIATION OF THIN GATE OXIDES 103
Status and prospects of the SIRAD irradiation facility for radiation effects studies at LNL 102
High energy Si ion irradiation effects on 10nm thick oxide MOS capacitors 102
Nuclear Structure Studies with Stable and Radioactive Beams: The SPES radioactive ion beam project 102
IBICC Sensitivity Map of a Power MOSFET with the SIRAD IEEM 98
Fast Neutrons at LNL Legnaro 98
High-Energy Ion Irradiation Effects on Thin Oxide p-Channel MOSFETs 96
Investigation of t-tbar in the full hadronic final state at CDF with a neural network approach 96
First results from a novel monolithic pixel sensor 96
Measurement of thett¯production cross section inpp¯collisions at sqrt(s)=1.8TeV 94
iMPACT: An Innovative Tracker and Calorimeter for Proton Computed Tomography 94
The SPES project of INFN: Facility and detectors 94
The SPES radioactive ion beam project of INFN 92
The SPES project: a second generation ISOL facility 91
The QMN Beam Line of the Neutron-induced Single Event Effects Facility at the 70 MeV Cyclotron of LNL-INFN 91
Neutron production targets for a new Single Event Effects facility at the 70 MeV Cyclotron of LNL-INFN 90
LNL irradiation facilities for radiation damage studies on electronic devices 90
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 87
The SPES Radioactive Ion Beam facility of INFN 82
SPES and the neutron facilities at Laboratori Nazionali di Legnaro 80
LINUS, the Integrated LNL Neutron Source facility 67
The Phase 0 of the NEPIR project at LNL 57
Nuclear physics midterm plan at Legnaro National Laboratories (LNL) 53
Fast neutron production at the LNL Tandem from the $$^7$$Li($$^{14}$$N,xn)X reaction 41
On the Vulnerability of UMOSFETs in Terrestrial Radiation Environments 32
Study of a simplified CoolGal target to support the Phase-0 NEPIR facility 31
null 15
Burnout susceptibility of silicon power diodes when exposed to 14 MeV neutrons 4
Totale 12.646
Categoria #
all - tutte 48.764
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.764


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021235 0 0 0 0 0 0 0 0 0 100 30 105
2021/2022634 5 1 4 53 52 8 59 55 111 4 115 167
2022/20232.655 174 203 118 147 219 498 0 128 1.084 2 40 42
2023/2024471 49 21 37 22 31 68 53 49 83 6 1 51
2024/20251.463 42 26 107 28 126 26 236 129 452 29 152 110
2025/20264.817 209 626 362 212 354 290 426 117 142 2.079 0 0
Totale 12.646