ABBATE, Carmine
 Distribuzione geografica
Continente #
EU - Europa 41.869
NA - Nord America 3.185
AS - Asia 1.806
SA - Sud America 106
AF - Africa 30
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 1
Totale 47.007
Nazione #
SE - Svezia 39.529
US - Stati Uniti d'America 3.123
CN - Cina 679
IE - Irlanda 678
SG - Singapore 504
DE - Germania 359
IT - Italia 331
RU - Federazione Russa 323
UA - Ucraina 295
TR - Turchia 195
IN - India 138
HK - Hong Kong 133
GB - Regno Unito 107
FI - Finlandia 86
BR - Brasile 79
VN - Vietnam 59
FR - Francia 52
CA - Canada 35
BD - Bangladesh 28
NL - Olanda 28
PL - Polonia 23
MX - Messico 19
JP - Giappone 18
BE - Belgio 15
PK - Pakistan 12
EU - Europa 10
ZA - Sudafrica 10
DK - Danimarca 9
ES - Italia 9
AR - Argentina 8
IQ - Iraq 7
VE - Venezuela 7
MA - Marocco 6
CL - Cile 5
ID - Indonesia 4
LT - Lituania 4
LU - Lussemburgo 4
MY - Malesia 4
NP - Nepal 4
TW - Taiwan 4
UZ - Uzbekistan 4
AT - Austria 3
DZ - Algeria 3
ET - Etiopia 3
KZ - Kazakistan 3
PA - Panama 3
AE - Emirati Arabi Uniti 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
GR - Grecia 2
HU - Ungheria 2
JM - Giamaica 2
JO - Giordania 2
KE - Kenya 2
RO - Romania 2
TN - Tunisia 2
AL - Albania 1
AU - Australia 1
BF - Burkina Faso 1
BO - Bolivia 1
DO - Repubblica Dominicana 1
EE - Estonia 1
EG - Egitto 1
GA - Gabon 1
IL - Israele 1
IM - Isola di Man 1
IR - Iran 1
KG - Kirghizistan 1
KW - Kuwait 1
LB - Libano 1
LV - Lettonia 1
NI - Nicaragua 1
NO - Norvegia 1
PY - Paraguay 1
RE - Reunion 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 47.007
Città #
Stockholm 39.000
Dublin 678
Chandler 487
Singapore 291
Ashburn 254
San Jose 228
Jacksonville 214
The Dalles 214
Rome 201
Izmir 173
Dallas 144
Hong Kong 132
Beijing 119
Nanjing 119
Boardman 117
Council Bluffs 94
Brooklyn 85
Moscow 67
Hefei 65
Wilmington 61
Lawrence 59
Los Angeles 59
Princeton 59
New York 55
Cassino 51
West Jordan 48
Woodbridge 44
Ann Arbor 43
Munich 43
Nanchang 43
Dearborn 39
Ogden 37
Pune 33
Grafing 31
Seattle 29
Helsinki 28
Santa Clara 27
Changsha 25
Kunming 24
Warsaw 21
Hebei 20
Naaldwijk 19
Orem 19
Chennai 18
Des Moines 17
Ho Chi Minh City 16
Inglewood 16
Brussels 15
Milan 15
Orange 15
Shenyang 15
Tianjin 15
Hanoi 14
Montreal 14
São Paulo 14
Tokyo 14
Denver 13
Kocaeli 12
Manchester 12
Mumbai 12
Mexico City 11
Toronto 11
Atlanta 10
Frankfurt am Main 10
Johannesburg 9
San Francisco 9
Amsterdam 8
Chicago 8
Gelsenkirchen 8
Jiaxing 8
London 8
Hangzhou 7
Lanzhou 7
New Delhi 7
Norwalk 7
Phoenix 7
St Petersburg 7
Verona 7
Assago 6
Auburn Hills 6
Naples 6
Padova 6
Poplar 6
Redwood City 6
San Mateo 6
Shanghai 6
Turku 6
Brandenburg 5
Changchun 5
Falls Church 5
Guangzhou 5
Houston 5
Bexley 4
Calgary 4
City of London 4
Copenhagen 4
Da Nang 4
Haiphong 4
Lahore 4
Luxembourg 4
Totale 44.106
Nome #
A probe array for fast quantitative eddy current imaging 2.037
EMI Analysis in High power Converters for Traction Application 2.036
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.027
Driving optimization of high voltage IGBT modules for traction application 2.025
The high frequency behaviour of high voltage and current IGBT modules 2.025
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 2.017
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.016
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.014
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.012
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.009
EMI Characterisation of high power IGBT modules For Traction Application 2.004
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 1.997
IGBT Modules Robustness During Turn-Off Commutation 1.995
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 1.991
Series Connection of High Power IGBT modules for traction applications 1.990
High Voltage, High Performance Switch using Series Connected IGBTs 1.985
The robustness of series-connected high power IGBT modules 1.984
Experimental characterisation of high efficiency resonant gate driver circuit 1.978
Investigation of MOSFET failure in soft-switching conditions 1.976
Innovative driving strategies for new generation high power igbt modules 1.969
A probe array for fast quantitative eddy current imaging 1.921
Comparison among eligible topologies for MARX klystron modulators 164
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 160
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 153
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 150
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 149
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 147
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 143
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 143
Perspective Performances of MOS-Gated GTO in High-Power Applications 138
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 138
Developments on DC/DC converters for the LHC experiment upgrades 137
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 137
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 136
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 135
IGBT RBSOA non-destructive testing methods: Analysis and discussion 134
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 134
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 133
Operation of SiC normally-off JFET at the edges of its safe operating area 124
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 124
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 122
Non Destructive SOA Testing of Power Modules (Invited) 121
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 120
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 119
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 117
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 116
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 116
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 114
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 113
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 113
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 110
Thermal damage in SiC Schottky diodes induced by SE heavy ions 110
Performances of MOS-Gated GTO in High Voltage Power Applications 109
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 107
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 107
Design and realization of a 200 A low-cost high-side switch for automotive applications 102
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 102
null 98
Mechanoluminescence of nylon under high velocity impact 98
Turn-off instabilities in large area IGBTs 96
The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off 90
null 82
null 80
null 65
Effects of back-side He irradiation on MOS-GTO performances 48
Testing Integrated COTS DC/DC Converters in Hostile Environment 34
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 25
The behaviour of 350 V GaN HEMTs during heavy ion irradiations 4
Totale 47.325
Categoria #
all - tutte 76.383
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 76.383


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202165 0 0 0 0 0 0 0 0 0 0 0 65
2021/2022641 5 0 9 62 49 5 32 42 153 0 104 180
2022/20232.063 143 182 83 143 133 378 2 117 800 3 42 37
2023/2024433 46 15 22 16 17 58 64 41 59 54 1 40
2024/20251.111 41 22 77 28 98 10 141 54 360 7 174 99
2025/202641.170 198 330 92 180 342 208 246 71 693 38.594 161 55
Totale 47.325