IRIS
ABBATE, Carmine
 Distribuzione geografica
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Continente #
EU - Europa 41.859
NA - Nord America 3.020
AS - Asia 1.723
SA - Sud America 106
AF - Africa 30
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 1
Totale 46.749
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Nazione #
SE - Svezia 39.529
US - Stati Uniti d'America 2.962
IE - Irlanda 678
CN - Cina 648
SG - Singapore 477
DE - Germania 359
IT - Italia 326
RU - Federazione Russa 323
UA - Ucraina 294
TR - Turchia 195
IN - India 138
HK - Hong Kong 131
GB - Regno Unito 105
FI - Finlandia 86
BR - Brasile 79
VN - Vietnam 55
FR - Francia 52
CA - Canada 34
NL - Olanda 28
PL - Polonia 23
MX - Messico 17
JP - Giappone 16
BE - Belgio 15
BD - Bangladesh 14
PK - Pakistan 12
EU - Europa 10
ZA - Sudafrica 10
DK - Danimarca 9
ES - Italia 9
AR - Argentina 8
IQ - Iraq 7
VE - Venezuela 7
MA - Marocco 6
CL - Cile 5
ID - Indonesia 4
LT - Lituania 4
LU - Lussemburgo 4
TW - Taiwan 4
UZ - Uzbekistan 4
AT - Austria 3
DZ - Algeria 3
ET - Etiopia 3
KZ - Kazakistan 3
MY - Malesia 3
AE - Emirati Arabi Uniti 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
HU - Ungheria 2
JM - Giamaica 2
JO - Giordania 2
KE - Kenya 2
NP - Nepal 2
PA - Panama 2
RO - Romania 2
TN - Tunisia 2
AL - Albania 1
AU - Australia 1
BF - Burkina Faso 1
BO - Bolivia 1
DO - Repubblica Dominicana 1
EE - Estonia 1
EG - Egitto 1
GA - Gabon 1
IL - Israele 1
IM - Isola di Man 1
IR - Iran 1
KG - Kirghizistan 1
KW - Kuwait 1
LB - Libano 1
LV - Lettonia 1
NI - Nicaragua 1
NO - Norvegia 1
PY - Paraguay 1
RE - Reunion 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 46.749
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Città #
Stockholm 39.000
Dublin 678
Chandler 487
Singapore 290
Ashburn 247
The Dalles 214
Jacksonville 213
Rome 200
San Jose 188
Izmir 173
Dallas 142
Hong Kong 130
Nanjing 119
Boardman 117
Beijing 116
Brooklyn 84
Moscow 67
Hefei 65
Wilmington 61
Lawrence 59
Princeton 59
Los Angeles 57
Cassino 51
West Jordan 48
New York 47
Woodbridge 44
Ann Arbor 43
Munich 43
Nanchang 43
Dearborn 39
Ogden 37
Pune 33
Grafing 31
Seattle 29
Helsinki 28
Changsha 25
Kunming 24
Council Bluffs 23
Santa Clara 23
Warsaw 21
Hebei 20
Naaldwijk 19
Chennai 18
Orem 18
Des Moines 17
Inglewood 16
Brussels 15
Ho Chi Minh City 15
Milan 15
Orange 15
Shenyang 15
Tianjin 15
Montreal 14
São Paulo 14
Tokyo 14
Denver 13
Hanoi 13
Kocaeli 12
Manchester 12
Mumbai 12
Atlanta 10
Frankfurt am Main 10
Toronto 10
Johannesburg 9
Mexico City 9
San Francisco 9
Amsterdam 8
Chicago 8
Gelsenkirchen 8
Jiaxing 8
London 8
Hangzhou 7
New Delhi 7
Norwalk 7
Phoenix 7
St Petersburg 7
Assago 6
Auburn Hills 6
Lanzhou 6
Naples 6
Padova 6
Poplar 6
Redwood City 6
San Mateo 6
Turku 6
Verona 6
Brandenburg 5
Changchun 5
Falls Church 5
Shanghai 5
Bexley 4
Calgary 4
City of London 4
Copenhagen 4
Guangzhou 4
Haiphong 4
Lahore 4
Luxembourg 4
Ningbo 4
Nuremberg 4
Totale 43.952
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Nome #
EMI Analysis in High power Converters for Traction Application 2.033
A probe array for fast quantitative eddy current imaging 2.032
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.022
Driving optimization of high voltage IGBT modules for traction application 2.022
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 2.013
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.013
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.008
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.004
The high frequency behaviour of high voltage and current IGBT modules 2.004
EMI Characterisation of high power IGBT modules For Traction Application 2.000
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.000
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 1.995
IGBT Modules Robustness During Turn-Off Commutation 1.993
Series Connection of High Power IGBT modules for traction applications 1.986
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 1.986
The robustness of series-connected high power IGBT modules 1.982
High Voltage, High Performance Switch using Series Connected IGBTs 1.980
Investigation of MOSFET failure in soft-switching conditions 1.975
Experimental characterisation of high efficiency resonant gate driver circuit 1.971
Innovative driving strategies for new generation high power igbt modules 1.963
A probe array for fast quantitative eddy current imaging 1.919
Comparison among eligible topologies for MARX klystron modulators 159
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 148
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 143
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 143
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 140
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 140
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 139
Perspective Performances of MOS-Gated GTO in High-Power Applications 137
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 137
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 137
Developments on DC/DC converters for the LHC experiment upgrades 135
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 134
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 133
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 132
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 130
IGBT RBSOA non-destructive testing methods: Analysis and discussion 129
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 123
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 122
Non Destructive SOA Testing of Power Modules (Invited) 120
Operation of SiC normally-off JFET at the edges of its safe operating area 119
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 118
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 118
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 117
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 117
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 115
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 112
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 112
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 109
Thermal damage in SiC Schottky diodes induced by SE heavy ions 109
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 107
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 107
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 106
Performances of MOS-Gated GTO in High Voltage Power Applications 104
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 101
Design and realization of a 200 A low-cost high-side switch for automotive applications 100
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 98
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Mechanoluminescence of nylon under high velocity impact 97
Turn-off instabilities in large area IGBTs 95
The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off 90
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Effects of back-side He irradiation on MOS-GTO performances 48
Testing Integrated COTS DC/DC Converters in Hostile Environment 33
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 25
The behaviour of 350 V GaN HEMTs during heavy ion irradiations 1
Totale 47.065
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Categoria #
all - tutte 74.404
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.404
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021161 0 0 0 0 0 0 0 0 0 79 17 65
2021/2022641 5 0 9 62 49 5 32 42 153 0 104 180
2022/20232.063 143 182 83 143 133 378 2 117 800 3 42 37
2023/2024433 46 15 22 16 17 58 64 41 59 54 1 40
2024/20251.111 41 22 77 28 98 10 141 54 360 7 174 99
2025/202640.910 198 330 92 180 342 208 246 71 693 38.550 0 0
Totale 47.065