IRIS
ABBATE, Carmine
 Distribuzione geografica
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Continente #
EU - Europa 41.877
NA - Nord America 3.466
AS - Asia 1.817
Continente sconosciuto - Info sul continente non disponibili 331
SA - Sud America 111
AF - Africa 30
OC - Oceania 1
Totale 47.633
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Nazione #
SE - Svezia 39.529
US - Stati Uniti d'America 3.399
CN - Cina 684
IE - Irlanda 678
SG - Singapore 510
DE - Germania 359
IT - Italia 335
RU - Federazione Russa 323
UA - Ucraina 295
TR - Turchia 195
IN - India 138
HK - Hong Kong 133
GB - Regno Unito 107
FI - Finlandia 86
BR - Brasile 81
VN - Vietnam 59
FR - Francia 54
CA - Canada 37
NL - Olanda 29
BD - Bangladesh 28
PL - Polonia 23
MX - Messico 19
JP - Giappone 18
BE - Belgio 15
PK - Pakistan 12
EU - Europa 10
ZA - Sudafrica 10
AR - Argentina 9
DK - Danimarca 9
ES - Italia 9
IQ - Iraq 7
VE - Venezuela 7
CL - Cile 6
MA - Marocco 6
ID - Indonesia 4
LT - Lituania 4
LU - Lussemburgo 4
MY - Malesia 4
NP - Nepal 4
TW - Taiwan 4
UZ - Uzbekistan 4
AT - Austria 3
DZ - Algeria 3
EC - Ecuador 3
ET - Etiopia 3
KZ - Kazakistan 3
PA - Panama 3
AE - Emirati Arabi Uniti 2
CO - Colombia 2
CZ - Repubblica Ceca 2
GR - Grecia 2
HU - Ungheria 2
JM - Giamaica 2
JO - Giordania 2
KE - Kenya 2
RO - Romania 2
TN - Tunisia 2
AL - Albania 1
AU - Australia 1
BF - Burkina Faso 1
BO - Bolivia 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
EG - Egitto 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
IL - Israele 1
IM - Isola di Man 1
IR - Iran 1
KG - Kirghizistan 1
KW - Kuwait 1
LB - Libano 1
LV - Lettonia 1
MK - Macedonia 1
NI - Nicaragua 1
NO - Norvegia 1
PY - Paraguay 1
RE - Reunion 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 47.312
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Città #
Stockholm 39.000
Dublin 678
Chandler 487
Singapore 293
Council Bluffs 285
Ashburn 261
San Jose 229
Jacksonville 214
The Dalles 214
Rome 201
Izmir 173
Dallas 145
Hong Kong 132
Beijing 120
Nanjing 119
Boardman 117
Brooklyn 85
Moscow 67
Hefei 65
Wilmington 61
Los Angeles 60
Lawrence 59
Princeton 59
New York 55
Cassino 51
West Jordan 48
Columbus 45
Woodbridge 44
Ann Arbor 43
Munich 43
Nanchang 43
Dearborn 39
Ogden 37
Pune 33
Grafing 31
Santa Clara 31
Seattle 29
Helsinki 28
Changsha 25
Kunming 24
Warsaw 21
Hebei 20
Naaldwijk 19
Orem 19
Chennai 18
Des Moines 17
Phoenix 17
Ho Chi Minh City 16
Inglewood 16
Brussels 15
Milan 15
Orange 15
Shenyang 15
São Paulo 15
Tianjin 15
Hanoi 14
Montreal 14
Tokyo 14
Denver 13
Kocaeli 12
Manchester 12
Mumbai 12
Toronto 12
Mexico City 11
Atlanta 10
Chicago 10
Frankfurt am Main 10
Johannesburg 9
San Francisco 9
Amsterdam 8
Gelsenkirchen 8
Jiaxing 8
London 8
Shanghai 8
Verona 8
Hangzhou 7
Lanzhou 7
New Delhi 7
Norwalk 7
St Petersburg 7
Assago 6
Auburn Hills 6
Naples 6
Padova 6
Poplar 6
Redwood City 6
San Mateo 6
Turku 6
Brandenburg 5
Changchun 5
Falls Church 5
Guangzhou 5
Houston 5
Bexley 4
Calgary 4
City of London 4
Copenhagen 4
Da Nang 4
Haiphong 4
Lahore 4
Totale 44.372
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Nome #
A probe array for fast quantitative eddy current imaging 2.046
EMI Analysis in High power Converters for Traction Application 2.041
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 2.033
The high frequency behaviour of high voltage and current IGBT modules 2.033
Driving optimization of high voltage IGBT modules for traction application 2.031
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 2.023
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 2.021
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 2.019
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 2.018
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 2.014
EMI Characterisation of high power IGBT modules For Traction Application 2.013
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 2.003
IGBT Modules Robustness During Turn-Off Commutation 2.000
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 1.998
Series Connection of High Power IGBT modules for traction applications 1.997
High Voltage, High Performance Switch using Series Connected IGBTs 1.992
The robustness of series-connected high power IGBT modules 1.991
Experimental characterisation of high efficiency resonant gate driver circuit 1.984
Investigation of MOSFET failure in soft-switching conditions 1.983
Innovative driving strategies for new generation high power igbt modules 1.976
A probe array for fast quantitative eddy current imaging 1.926
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 173
Comparison among eligible topologies for MARX klystron modulators 169
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 157
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 156
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 155
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 148
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 148
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 146
Perspective Performances of MOS-Gated GTO in High-Power Applications 144
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 144
IGBT RBSOA non-destructive testing methods: Analysis and discussion 139
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 139
Developments on DC/DC converters for the LHC experiment upgrades 139
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 139
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 139
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 137
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 135
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 130
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 129
Operation of SiC normally-off JFET at the edges of its safe operating area 128
Non Destructive SOA Testing of Power Modules (Invited) 126
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 125
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 124
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 121
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 121
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 118
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 118
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 117
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 114
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 112
Thermal damage in SiC Schottky diodes induced by SE heavy ions 112
Performances of MOS-Gated GTO in High Voltage Power Applications 111
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 111
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 109
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 108
Design and realization of a 200 A low-cost high-side switch for automotive applications 106
Mechanoluminescence of nylon under high velocity impact 99
null 98
Turn-off instabilities in large area IGBTs 97
The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off 91
null 82
null 80
null 65
Effects of back-side He irradiation on MOS-GTO performances 49
Testing Integrated COTS DC/DC Converters in Hostile Environment 36
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 28
The behaviour of 350 V GaN HEMTs during heavy ion irradiations 14
null 3
A Simple and Accurate Software Technique for the Dynamic Measurement of the Current in Fast Switching Devices using a Resistive Shunt 2
Totale 47.633
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Categoria #
all - tutte 77.998
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 77.998
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022636 0 0 9 62 49 5 32 42 153 0 104 180
2022/20232.063 143 182 83 143 133 378 2 117 800 3 42 37
2023/2024433 46 15 22 16 17 58 64 41 59 54 1 40
2024/20251.111 41 22 77 28 98 10 141 54 360 7 174 99
2025/202641.173 198 330 92 180 342 208 246 71 693 38.594 161 58
2026/2027305 198 107 0 0 0 0 0 0 0 0 0 0
Totale 47.633