ABBATE, Carmine
 Distribuzione geografica
Continente #
EU - Europa 2.347
NA - Nord America 1.872
AS - Asia 758
Continente sconosciuto - Info sul continente non disponibili 10
SA - Sud America 6
AF - Africa 2
OC - Oceania 1
Totale 4.996
Nazione #
US - Stati Uniti d'America 1.862
IE - Irlanda 678
SE - Svezia 528
CN - Cina 359
DE - Germania 316
IT - Italia 299
UA - Ucraina 292
TR - Turchia 188
SG - Singapore 107
IN - India 92
FI - Finlandia 79
GB - Regno Unito 57
FR - Francia 28
NL - Olanda 20
BE - Belgio 14
EU - Europa 10
DK - Danimarca 9
RU - Federazione Russa 9
CA - Canada 8
LU - Lussemburgo 4
PL - Polonia 4
TW - Taiwan 4
CL - Cile 3
AT - Austria 2
BR - Brasile 2
ID - Indonesia 2
JP - Giappone 2
PA - Panama 2
RO - Romania 2
AU - Australia 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
HK - Hong Kong 1
HU - Ungheria 1
IM - Isola di Man 1
IR - Iran 1
KG - Kirghizistan 1
LV - Lettonia 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
ZA - Sudafrica 1
Totale 4.996
Città #
Dublin 678
Chandler 487
Jacksonville 213
Rome 191
Izmir 173
Nanjing 119
Boardman 95
Singapore 75
Brooklyn 71
Wilmington 61
Ashburn 59
Lawrence 59
Princeton 59
Cassino 50
West Jordan 48
Woodbridge 44
Ann Arbor 43
Nanchang 43
Dearborn 39
Ogden 37
Beijing 36
Pune 33
Grafing 31
Helsinki 28
Los Angeles 28
Seattle 26
Changsha 25
Kunming 24
Hebei 20
Naaldwijk 19
New York 18
Des Moines 16
Inglewood 16
Munich 16
Orange 15
Shenyang 15
Tianjin 15
Brussels 14
Milan 13
Kocaeli 12
Santa Clara 11
Gelsenkirchen 8
Jiaxing 8
Norwalk 7
Toronto 7
Auburn Hills 6
Hangzhou 6
Lanzhou 6
Padova 6
Redwood City 6
San Francisco 6
San Mateo 6
Verona 6
Brandenburg 5
Changchun 5
Falls Church 5
Naples 5
Shanghai 5
Copenhagen 4
Luxembourg 4
Ningbo 4
Saint Petersburg 4
Walnut 4
Warsaw 4
Foggia 3
Guangzhou 3
Hsinchu 3
Jinan 3
Seveso 3
Taizhou 3
Zhengzhou 3
Cambridge 2
Espoo 2
Hefei 2
Lappeenranta 2
Mumbai 2
Redmond 2
Støvring 2
Tappahannock 2
Vienna 2
Amsterdam 1
Berlin 1
Bishkek 1
Bradford 1
Bratislava 1
Bremen 1
Clifton 1
Dalian 1
Delhi 1
Dongguan 1
Douglas 1
Frankfurt am Main 1
Frederikshavn 1
Fuzhou 1
Grugliasco 1
Guayaquil 1
Haikou 1
Hendon 1
Horia 1
Hyderabad 1
Totale 3.261
Nome #
A probe array for fast quantitative eddy current imaging 113
The high frequency behaviour of high voltage and current IGBT modules 111
Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area 109
MOS-Gated GTO: a new functionally integrated device suitable for high voltage power applications 107
EMI Analysis in High power Converters for Traction Application 102
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation 100
Analysis and Optimisation through Innovative Driving Strategies of High Power IGBT Performances/EMI Reduction Trade-off for Converter Systems in Railway Applications 99
null 98
Comparison among eligible topologies for MARX klystron modulators 98
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters 97
Optimization of High-Voltage IGBT Modules Turn-on on Inductive Load 97
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit 97
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications 96
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents 95
Driving optimization of high voltage IGBT modules for traction application 95
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 94
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 93
Perspective Performances of MOS-Gated GTO in High-Power Applications 93
EMI Characterisation of high power IGBT modules For Traction Application 92
High-Voltage, High-Performance Switch Using Series-Connected IGBTs 92
Series Connection of High Power IGBT modules for traction applications 91
The robustness of series-connected high power IGBT modules 90
IGBT RBSOA non-destructive testing methods: Analysis and discussion 89
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters (invited) 88
Investigation of MOSFET failure in soft-switching conditions 88
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) 88
High Voltage, High Performance Switch using Series Connected IGBTs 87
Instable Mechanisms During Unclamped Operation of High Power IGBT Modules 87
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs 87
Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit . 86
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes 86
Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit 84
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments 83
IGBT Modules Robustness During Turn-Off Commutation 83
Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 83
Developments on DC/DC converters for the LHC experiment upgrades 83
Measurement of IGBT High-Frequency Input Impedance in Short Circuit 83
null 82
Non Destructive SOA Testing of Power Modules (Invited) 82
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules 82
Innovative driving strategies for new generation high power igbt modules 81
Operation of SiC normally-off JFET at the edges of its safe operating area 81
Unclamped repetitive stress on 1200 V normally-off SiC JFETs 81
Thermal damage in SiC Schottky diodes induced by SE heavy ions 81
null 80
Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit 80
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit 80
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I 80
High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit 79
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs 79
Performances of MOS-Gated GTO in High Voltage Power Applications 77
Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices 72
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition 66
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit 66
null 65
The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off 64
Turn-off instabilities in large area IGBTs 64
An accurate switching current measurement based on resistive shunt applied to short circuit gan hemt characterization 62
Experimental characterisation of high efficiency resonant gate driver circuit 62
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests 61
Mechanoluminescence of nylon under high velocity impact 59
Design and realization of a 200 A low-cost high-side switch for automotive applications 44
A Novel Modulation Technique for Pulsating DC Link Multistage Converter with Zero Voltage Transition Based on Different and Unrelated Switching Frequencies 25
A probe array for fast quantitative eddy current imaging 10
Effects of back-side He irradiation on MOS-GTO performances 4
Testing Integrated COTS DC/DC Converters in Hostile Environment 4
Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters 3
Totale 5.300
Categoria #
all - tutte 23.318
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.318


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020303 0 0 0 0 7 98 39 58 14 21 63 3
2020/2021528 59 1 59 73 4 77 5 57 32 79 17 65
2021/2022641 5 0 9 62 49 5 32 42 153 0 104 180
2022/20232.063 143 182 83 143 133 378 2 117 800 3 42 37
2023/2024433 46 15 22 16 17 58 64 41 59 54 1 40
2024/2025256 41 22 77 28 88 0 0 0 0 0 0 0
Totale 5.300