The behaviour of a 350 V Enhancement Mode GaN power HEMT during heavy ion irradiation is presented. A new experimental setup has been developed to increase the sensitivity of the measurement. It allowed the measurement of the charge collected at the terminals following the impact with energetic particles to be extended by almost an order of magnitude. The results obtained, interpreted with the help of two-dimensional finite element simulations, demonstrate that the tested devices exhibit very different behaviour from those previously characterized. They do not show significant charge amplification and are not subjected to single-event gate rupture. Furthermore, it is demonstrated that the device failure is due to a recursive mechanism like that which develops in silicon PiN diodes when exposed to heavy ion irradiation.
The behaviour of 350 V GaN HEMTs during heavy ion irradiations
Velardi F.;Canale Parola G.;Palazzo S.;Martano E.;Sanseverino A.;Abbate C.;Busatto G.
2025-01-01
Abstract
The behaviour of a 350 V Enhancement Mode GaN power HEMT during heavy ion irradiation is presented. A new experimental setup has been developed to increase the sensitivity of the measurement. It allowed the measurement of the charge collected at the terminals following the impact with energetic particles to be extended by almost an order of magnitude. The results obtained, interpreted with the help of two-dimensional finite element simulations, demonstrate that the tested devices exhibit very different behaviour from those previously characterized. They do not show significant charge amplification and are not subjected to single-event gate rupture. Furthermore, it is demonstrated that the device failure is due to a recursive mechanism like that which develops in silicon PiN diodes when exposed to heavy ion irradiation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
