Sfoglia per Autore
Non-destructive tester for single event burnout of power diodes
2001-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Velardi, Francesco; Wyss, Jeffery
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators
2001-01-01 C., Natale; Velardi, Francesco; C., Visone
Identification and Compensation of Hysteresis for Magnetostrictive Actuators
2001-01-01 C., Natale; Velardi, Francesco; C., Visone
The Reliability of New Generation Power MOSFETs in Radiation Environment
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Kaminksy
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs
2002-01-01 Busatto, Giovanni; B., Cascone; L., Fratelli; M., Balsamo; Iannuzzo, Francesco; Velardi, Francesco
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori
An On-Chip Non Invasive Integrated Current Sensing
2002-01-01 Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact
2003-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement
2003-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Velardi, Francesco; M., Valentino; G. P., Pepe
MAGFET Based Current Sensing for Power Integrated Circuit
2003-01-01 Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents
2003-01-01 Busatto, Giovanni; Abbate, C.; Cascone, B.; Manzo, R.; Fratelli, L.; Giannini, G.; Iannuzzo, Francesco; Velardi, Francesco
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure
2003-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curr; A., Cascio; F., Frisina; A., Cavagnoli
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment
2003-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curro'; A., Cascio; F., Frisina
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure
2003-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure
2004-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curro'; A., Cascio; F., Frisina
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure
2004-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curr; A., Cascio; F., Frisina
Cosmic ray effects on power MOSFET
2004-01-01 Busatto, Giovanni; A., Cascio; G., Curro'; F., Frisina; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure
2004-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure
2004-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curro'; A., Cascio; F., Frisina
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Non-destructive tester for single event burnout of power diodes | 1-gen-2001 | Busatto, Giovanni; Iannuzzo, Francesco; Velardi, Francesco; Wyss, Jeffery | |
Modelling and Compensation of Hysteresis for Magnetostrictive Actuators | 1-gen-2001 | C., Natale; Velardi, Francesco; C., Visone | |
Identification and Compensation of Hysteresis for Magnetostrictive Actuators | 1-gen-2001 | C., Natale; Velardi, Francesco; C., Visone | |
The Reliability of New Generation Power MOSFETs in Radiation Environment | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Kaminksy | |
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs | 1-gen-2002 | Busatto, Giovanni; B., Cascone; L., Fratelli; M., Balsamo; Iannuzzo, Francesco; Velardi, Francesco | |
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori | |
An On-Chip Non Invasive Integrated Current Sensing | 1-gen-2002 | Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella | |
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata | |
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact | 1-gen-2003 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori | |
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement | 1-gen-2003 | Busatto, Giovanni; Iannuzzo, Francesco; Velardi, Francesco; M., Valentino; G. P., Pepe | |
MAGFET Based Current Sensing for Power Integrated Circuit | 1-gen-2003 | Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella | |
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents | 1-gen-2003 | Busatto, Giovanni; Abbate, C.; Cascone, B.; Manzo, R.; Fratelli, L.; Giannini, G.; Iannuzzo, Francesco; Velardi, Francesco | |
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure | 1-gen-2003 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curr; A., Cascio; F., Frisina; A., Cavagnoli | |
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment | 1-gen-2003 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curro'; A., Cascio; F., Frisina | |
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure | 1-gen-2003 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori | |
Experimental Study on the Reliability of Low Blocking Voltage Power VDMOSFET During Heavy Ion Exposure | 1-gen-2004 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curro'; A., Cascio; F., Frisina | |
Experimental study on the effect of the gate oxide thickness and the epitaxial layer resistivity on the reliability of low blocking voltage power VDMOSFET during heavy ions exposure | 1-gen-2004 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curr; A., Cascio; F., Frisina | |
Cosmic ray effects on power MOSFET | 1-gen-2004 | Busatto, Giovanni; A., Cascio; G., Curro'; F., Frisina; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco | |
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure | 1-gen-2004 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori | |
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure | 1-gen-2004 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curro'; A., Cascio; F., Frisina |
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