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Titolo Data di pubblicazione Autore(i) File
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level 1-gen-1993 Sanseverino, Annunziata; P., Spirito
Recombination Lifetime Measurements in Silicon 1-gen-1994 P., Spirito; S., Daliento; Sanseverino, Annunziata
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells 1-gen-1994 S., Daliento; Sanseverino, Annunziata; P., Spirito
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime 1-gen-1994 P., Spirito; Sanseverino, Annunziata
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione 1-gen-1995 Sanseverino, Annunziata
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 1-gen-1995 S., Daliento; N., Rinaldi; Sanseverino, Annunziata; P., Spirito
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer 1-gen-1996 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers 1-gen-1996 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions 1-gen-1997 A., Cutolo; S., Daliento; A., Irace; Sanseverino, Annunziata; P., Spirito; L., Zeni
Recombination lifetime measurements in silicon wafers 1-gen-1997 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers 1-gen-1997 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni; C., Peschke
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials 1-gen-1998 S., Daliento; Sanseverino, Annunziata; P., Spirito
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon 1-gen-1998 S., Daliento; Sanseverino, Annunziata; P., Spirito
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 1-gen-1998 S., Daliento; Sanseverino, Annunziata; P. M., Sarro; P., Spirito; L., Zeni
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers 1-gen-1998 P., Spirito; S., Daliento; Sanseverino, Annunziata
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers 1-gen-1998 S., Daliento; Sanseverino, Annunziata; P., Spirito; G. F., Vitale; L, Zeni
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 1-gen-1998 A., Cutolo; S., Daliento; Sanseverino, Annunziata; G. F., Vitale
Comments on : Temperature Dependence of Carrier Lifetime in Si wafer 1-gen-1999 P., Spirito; S., Daliento; Sanseverino, Annunziata; L., Zeni
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique 1-gen-1999 S., Daliento; Sanseverino, Annunziata; P., Spirito
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 1-gen-1999 S., Bellone; S., Daliento; Sanseverino, Annunziata
Mostrati risultati da 1 a 20 di 112
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