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Titolo Data di pubblicazione Autore(i) File
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 1-gen-1999 S., Daliento; Sanseverino, Annunziata; P., Spirito
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure 1-gen-1999 S., Bellone; S., Daliento; Sanseverino, Annunziata
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 1-gen-1999 S., Bellone; S., Daliento; Sanseverino, Annunziata
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 1-gen-1999 S., Bellone; S., Daliento; Sanseverino, Annunziata
Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 1-gen-2000 S., Daliento; Sanseverino, Annunziata; P., Spirito; Busatto, Giovanni; Wyss, Jeffery
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with Transverse Probe Optical Technique 1-gen-2000 S., Daliento; A., Irace; Sanseverino, Annunziata; L., Sirleto; G., Vitale
Experimental measurement of recombination lifetime in proton irradiated power devices 1-gen-2000 Daliento, S.; Sanseverino, Annunziata; Spirito, P.; Busatto, Giovanni; Wyss, Jeffery
Optimised 2-D Design and Fabrication of Screen Printed Buried Contacts Silicon Solar Cells 1-gen-2001 S., Daliento; Sanseverino, Annunziata; G., Arabito; M., Bastiano; M., Izzi; P., Mangiapane; L., Pirozzi
Modelling of the Input Characteristics of Bipolar JFET Structures 1-gen-2001 S., Bellone; S., Daliento; Sanseverino, Annunziata
A New Test Structure for In-Situ Measurements of Interface Recombination During Surface Treatments 1-gen-2002 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
A Complete 2D Simulation Procedure for an Immediate Feedback Between Technological Processes an Sola Cell Efficiency 1-gen-2002 S., Daliento; Sanseverino, Annunziata; M., Izzi; L., Pirozzi
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 1-gen-2002 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure 1-gen-2002 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
In-Situ Characterization of Semiconductor Interface During a_Si Solar Cell Fabrication 1-gen-2002 S., Daliento; Sanseverino, Annunziata; P., Spirito; N., Martucciello; F., Roca
An Electrical Technique for the Measurement of the Surface Recombination Velocity 1-gen-2002 S., Daliento; Sanseverino, Annunziata; P., Spirito; G., Contento; N., Martucciello; I., Nasti; F., Roca
Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure 1-gen-2003 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curr; A., Cascio; F., Frisina; A., Cavagnoli
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment 1-gen-2003 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curro'; A., Cascio; F., Frisina
An Electrical Technique for the Measurement of the Interface Recombination Velocity Based on a Three Terminal Test Structure 1-gen-2003 S., Daliento; F., Roca; Sanseverino, Annunziata; P., Spirito
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD 1-gen-2003 F., Roca; S., Bellone; G., Contento; D., Daliento; R., Fucci; H. C., Neitzert; N., Martucciello; Sanseverino, Annunziata; L., Zeni
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure 1-gen-2004 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori
Mostrati risultati da 21 a 40 di 112
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