Sfoglia per Autore
High voltage bipolar mode JFET with normally-Off characteristics
1985-01-01 S., Bellone; A., Caruso; P., Spirito; G., Vitale; Busatto, Giovanni; G., Cocorullo; G., Ferla; S., Musumeci
The turn-off transient of the Bipolar Mode Field Effect Transistor
1988-01-01 G., Vitale; Busatto, Giovanni
Performance Analysis of a Bipolar Mode FET (BMFET) with normally Off characteristics
1988-01-01 A., Caruso; P., Spirito; G., Vitale; Busatto, Giovanni; G., Ferla; G., Musumeci
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI
1989-01-01 P., Spirito; S., Bellone; C., Ransom; Busatto, Giovanni; G., Cocorullo
Recombination measurement on N-type heavily-doped layer in high/low silicon junctions
1991-01-01 S., Bellone; Busatto, Giovanni; C. M., Ransom
Physical Modeling of Bipolar Mode JFET for CAE/CADSimulation
1993-01-01 Busatto, Giovanni
Advanced RBSOA Analysis for Advanced Power BJT's
1996-01-01 Busatto, Giovanni; L., Fratelli; A., Patti
BMFET vs BJT in reverse bias safe operations
1996-01-01 Busatto, Giovanni; L., Fratelli
Effects of metallization lay-out on turn-off failure of modern power bipolar transistors
1996-01-01 Busatto, Giovanni; A., Conte; A., Patti
Activation of parasitic bipolar transistor during reverse recovery of MOSFET’s intrinsic diode
1997-01-01 Busatto, Giovanni; Persiano, G. V.; Strollo, A.; Spirito, P.
A circuit model for GTOs based on lumped charge approach
1998-01-01 Iannuzzo, Francesco; Busatto, Giovanni
PSPICE model for GTOs
1998-01-01 Busatto, Giovanni; Iannuzzo, Francesco; L., Fratelli
Series connection of IGBTs in hard-switching applications
1998-01-01 Busatto, Giovanni; Cascone, B.; Fratelli, L.; Luciano, A. M.
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode
1999-01-01 Busatto, Giovanni; Persiano, G. V.; Iannuzzo, Francesco
A lumped charge model for GTOs suitable for circuit simulation
1999-01-01 Iannuzzo, Francesco; Busatto, Giovanni
Long term Reliability Testing of HV-IGBT modules in worst case traction operation
1999-01-01 L., Fratelli; B., Cascone; G., Giannini; Busatto, Giovanni
Reliability tests of power IGBTs for railway traction
1999-01-01 Fratelli, L.; Giannini, G.; Cascone, B.; Busatto, Giovanni
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES
1999-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Wyss, Jeffery; Pantano, D.; Bisello, D.
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode
1999-01-01 G. V., Persiano; Iannuzzo, Francesco; Busatto, Giovanni; P., Spirito
A non-destructive technique for magnetic imaging of current distributions inside power modules
1999-01-01 Pepe, G. P.; Busatto, Giovanni; Ruosi, A.; Valentino, M.; Peluso, G.
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