IANNUZZO, Francesco
IANNUZZO, Francesco
Dipartimento di Ingegneria Elettrica e dell'Informazione "Maurizio Scarano"
A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET
2008-01-01 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET
2008-01-01 A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò
A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules
2016-01-01 Bahman, Amir Sajjad; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco; Blaabjerg, Frede
A circuit model for GTOs based on lumped charge approach
1998-01-01 Iannuzzo, Francesco; Busatto, Giovanni
A comprehensive investigation on the short circuit performance of MW-level IGBT power modules
2015-01-01 Wu, Rui; Diaz Reigosa, Paula; Iannuzzo, Francesco; Wang, Huai; Blaabjerg, Frede
A general methodology for circuit simulation of high-voltage power devices
2000-01-01 Iannuzzo, Francesco; Busatto, Giovanni
A lumped charge model for GTOs suitable for circuit simulation
1999-01-01 Iannuzzo, Francesco; Busatto, Giovanni
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs
2011-01-01 Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs
2007-01-01 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina
A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules
2016-01-01 Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze; Blaabjerg, Frede
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
2017-01-01 Ceccarelli, L.; Reigosa, P. D.; Iannuzzo, F.; Blaabjerg, F.
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations
2014-01-01 Rui, Wu; Huai, Wang; Ke, Ma; Pramod, Ghimire; Iannuzzo, Francesco; Frede, Blaabjerg
A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations
2016-01-01 Wu, Rui; Wang, Huai; Pedersen, Kristian Bonderup; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco; Blaabjerg, Frede
A time-resolved IBICC experiment using the IEEM of the SIRAD facility
2012-01-01 L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery
Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction
2016-01-01 Luo, Haoze; Iannuzzo, Francesco; Ma, Ke; Blaabjerg, Frede; Li, Wuhua; He, Xiangning
Advanced power cycler with intelligent monitoring strategy of IGBT module under test
2017-01-01 Choi, U. M.; Blaabjerg, F.; Iannuzzo, F.
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit
2014-01-01 Rui, Wu; Iannuzzo, Francesco; Huai, Wang; Frede, Blaabjerg
An On-Chip Non Invasive Integrated Current Sensing
2002-01-01 Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella
An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure
2004-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET | 1-gen-2008 | A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò | |
| A 3-D Simulation Study about Single Event Gate Damage in Medium Voltage Power MOSFET | 1-gen-2008 | A., Porzio; Velardi, Francesco; Busatto, Giovanni; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Currò | |
| A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules | 1-gen-2016 | Bahman, Amir Sajjad; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco; Blaabjerg, Frede | |
| A circuit model for GTOs based on lumped charge approach | 1-gen-1998 | Iannuzzo, Francesco; Busatto, Giovanni | |
| A comprehensive investigation on the short circuit performance of MW-level IGBT power modules | 1-gen-2015 | Wu, Rui; Diaz Reigosa, Paula; Iannuzzo, Francesco; Wang, Huai; Blaabjerg, Frede | |
| A general methodology for circuit simulation of high-voltage power devices | 1-gen-2000 | Iannuzzo, Francesco; Busatto, Giovanni | |
| A lumped charge model for GTOs suitable for circuit simulation | 1-gen-1999 | Iannuzzo, Francesco; Busatto, Giovanni | |
| A new test methodology for an exhaustive study of single-event-effects on power MOSFETs | 1-gen-2011 | Busatto, Giovanni; D., Bisello; G., Currò; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; L., Silvestrin; M., Tessaro; Velardi, Francesco; Wyss, Jeffery | |
| A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs | 1-gen-2007 | Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina | |
| A Short Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules | 1-gen-2016 | Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze; Blaabjerg, Frede | |
| A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis | 1-gen-2017 | Ceccarelli, L.; Reigosa, P. D.; Iannuzzo, F.; Blaabjerg, F. | |
| A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations | 1-gen-2014 | Rui, Wu; Huai, Wang; Ke, Ma; Pramod, Ghimire; Iannuzzo, Francesco; Frede, Blaabjerg | |
| A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations | 1-gen-2016 | Wu, Rui; Wang, Huai; Pedersen, Kristian Bonderup; Ma, Ke; Ghimire, Pramod; Iannuzzo, Francesco; Blaabjerg, Frede | |
| A time-resolved IBICC experiment using the IEEM of the SIRAD facility | 1-gen-2012 | L., Silvestrin; D., Bisello; Busatto, Giovanni; P., Giubilato; Iannuzzo, Francesco; S., Mattiazzo; D., Pantano; Sanseverino, Annunziata; M., Tessaro; Velardi, Francesco; Wyss, Jeffery | |
| Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction | 1-gen-2016 | Luo, Haoze; Iannuzzo, Francesco; Ma, Ke; Blaabjerg, Frede; Li, Wuhua; He, Xiangning | |
| Advanced power cycler with intelligent monitoring strategy of IGBT module under test | 1-gen-2017 | Choi, U. M.; Blaabjerg, F.; Iannuzzo, F. | |
| An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata | |
| An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit | 1-gen-2014 | Rui, Wu; Iannuzzo, Francesco; Huai, Wang; Frede, Blaabjerg | |
| An On-Chip Non Invasive Integrated Current Sensing | 1-gen-2002 | Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella | |
| An original approach to study the charge generation mechanisms in Power MOSFETs during heavy ions exposure | 1-gen-2004 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; A., Porzio; Sanseverino, Annunziata; G., Curr; A., Cascio; F., Frisina; A., Candelori |