Sfoglia per Autore
PSPICE model for GTOs
1998-01-01 Busatto, Giovanni; Iannuzzo, Francesco; L., Fratelli
A circuit model for GTOs based on lumped charge approach
1998-01-01 Iannuzzo, Francesco; Busatto, Giovanni
Effects of heavy ion impact on power diodes
1999-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Wyss, Jeffery; D., Pantano; D., Bisello
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode
1999-01-01 G. V., Persiano; Iannuzzo, Francesco; Busatto, Giovanni; P., Spirito
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode
1999-01-01 Busatto, Giovanni; Persiano, G. V.; Iannuzzo, Francesco
A lumped charge model for GTOs suitable for circuit simulation
1999-01-01 Iannuzzo, Francesco; Busatto, Giovanni
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES
1999-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Wyss, Jeffery; Pantano, D.; Bisello, D.
A general methodology for circuit simulation of high-voltage power devices
2000-01-01 Iannuzzo, Francesco; Busatto, Giovanni
Lumped Charge PSPICE Model for High–Voltage IGBTs
2000-01-01 Busatto, Giovanni; Iannuzzo, Francesco; P., Grimaldi
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode
2001-01-01 Iannuzzo, Francesco; G. V., Persiano; Busatto, Giovanni
Non-destructive tester for single event burnout of power diodes
2001-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Velardi, Francesco; Wyss, Jeffery
An On-Chip Non Invasive Integrated Current Sensing
2002-01-01 Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs
2002-01-01 Busatto, Giovanni; B., Cascone; L., Fratelli; M., Balsamo; Iannuzzo, Francesco; Velardi, Francesco
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori
The Reliability of New Generation Power MOSFETs in Radiation Environment
2002-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Kaminksy
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents
2003-01-01 Busatto, Giovanni; Abbate, C.; Cascone, B.; Manzo, R.; Fratelli, L.; Giannini, G.; Iannuzzo, Francesco; Velardi, Francesco
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure
2003-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori
MAGFET Based Current Sensing for Power Integrated Circuit
2003-01-01 Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment
2003-01-01 Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curro'; A., Cascio; F., Frisina
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
PSPICE model for GTOs | 1-gen-1998 | Busatto, Giovanni; Iannuzzo, Francesco; L., Fratelli | |
A circuit model for GTOs based on lumped charge approach | 1-gen-1998 | Iannuzzo, Francesco; Busatto, Giovanni | |
Effects of heavy ion impact on power diodes | 1-gen-1999 | Busatto, Giovanni; Iannuzzo, Francesco; Wyss, Jeffery; D., Pantano; D., Bisello | |
Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode | 1-gen-1999 | G. V., Persiano; Iannuzzo, Francesco; Busatto, Giovanni; P., Spirito | |
Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode | 1-gen-1999 | Busatto, Giovanni; Persiano, G. V.; Iannuzzo, Francesco | |
A lumped charge model for GTOs suitable for circuit simulation | 1-gen-1999 | Iannuzzo, Francesco; Busatto, Giovanni | |
EFFETCS OF HEAVY ION IMPACT ON POWER DIODES | 1-gen-1999 | Busatto, Giovanni; Iannuzzo, Francesco; Wyss, Jeffery; Pantano, D.; Bisello, D. | |
A general methodology for circuit simulation of high-voltage power devices | 1-gen-2000 | Iannuzzo, Francesco; Busatto, Giovanni | |
Lumped Charge PSPICE Model for High–Voltage IGBTs | 1-gen-2000 | Busatto, Giovanni; Iannuzzo, Francesco; P., Grimaldi | |
Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode | 1-gen-2001 | Iannuzzo, Francesco; G. V., Persiano; Busatto, Giovanni | |
Non-destructive tester for single event burnout of power diodes | 1-gen-2001 | Busatto, Giovanni; Iannuzzo, Francesco; Velardi, Francesco; Wyss, Jeffery | |
An On-Chip Non Invasive Integrated Current Sensing | 1-gen-2002 | Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella | |
An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata | |
Non_Destructive High Temperature Characterisation of High-Voltage IGBTs | 1-gen-2002 | Busatto, Giovanni; B., Cascone; L., Fratelli; M., Balsamo; Iannuzzo, Francesco; Velardi, Francesco | |
Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori | |
The Reliability of New Generation Power MOSFETs in Radiation Environment | 1-gen-2002 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Kaminksy | |
Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents | 1-gen-2003 | Busatto, Giovanni; Abbate, C.; Cascone, B.; Manzo, R.; Fratelli, L.; Giannini, G.; Iannuzzo, Francesco; Velardi, Francesco | |
Charge generation mechanisms in low-voltage power MOSFETs during radiation exposure | 1-gen-2003 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; A., Candelori | |
MAGFET Based Current Sensing for Power Integrated Circuit | 1-gen-2003 | Busatto, Giovanni; R., LA CAPRUCCIA; Iannuzzo, Francesco; Velardi, Francesco; R., Roncella | |
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment | 1-gen-2003 | Velardi, Francesco; Iannuzzo, Francesco; Busatto, Giovanni; Wyss, Jeffery; Sanseverino, Annunziata; A., Candelori; G., Curro'; A., Cascio; F., Frisina |
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