Sfoglia per Autore
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations
2005-01-01 Iannuzzo, Francesco
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet
2005-01-01 Busatto, Giovanni; A., Porzio; Velardi, Francesco; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Curr
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet
2005-01-01 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET
2005-01-01 Busatto, Giovanni; A., Porzio; Velardi, Francesco; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Curr
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters
2005-01-01 Abbate, C.; Busatto, Giovanni; Fratelli, L.; Iannuzzo, Francesco
The high frequency behaviour of high voltage and current IGBT modules
2006-01-01 Abbate, C; Busatto, Giovanni; Fratelli, L; Iannuzzo, Francesco
Investigation of MOSFET failure in soft-switching conditions
2006-01-01 Iannuzzo, Francesco; Busatto, Giovanni; Abbate, C.
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules
2006-01-01 Abbate, C.; Busatto, Giovanni; Fratelli, L.; Iannuzzo, Francesco
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment
2006-01-01 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment
2006-01-01 G., Busatto; G., Curro'; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment
2006-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Porzio, A; Sanseverino, Annunziata; Velardi, Francesco; Cascio, A; Curro', G; Frisina, F.
Experimental study of power MOSFET’s gate damage in radiation environment
2006-01-01 Busatto, Giovanni; Iannuzzo, Francesco; Porzio, A; Sanseverino, Annunziata; Velardi, Francesco; Curro', G.
The robustness of series-connected high power IGBT modules
2007-01-01 Abbate, C.; Busatto, Giovanni; Fratelli, L.; Iannuzzo, Francesco; Cascone, B.; Manzo, R.
Experimental characterisation of high efficiency resonant gate driver circuit
2007-01-01 Abbate, C.; Busatto, Giovanni; Iannuzzo, Francesco; Fratelli, L.
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs
2007-01-01 Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina
High Voltage, High Performance Switch using Series Connected IGBTs
2008-01-01 Busatto, Giovanni; Abbate, C.; Iannuzzo, Francesco; Abbate, B.; Fratelli, L.; Cascone, B.; Manzo, R.
High Performance, FPGA-based Test Apparatus for Unclamped Inductive Switching of IGBTs
2008-01-01 Iannuzzo, Francesco
IGBT Modules Robustness During Turn-Off Commutation
2008-01-01 Busatto, Giovanni; Abbate, Carmine; B., Abbate; Iannuzzo, Francesco
Experimental Analysis of Energy Consumption by MobileDDR Memory for Mobile Applications
2008-01-01 E., LA MARRA; Iannuzzo, Francesco; M., DI ZENZO; V., Micali; G., Valeri; D., Bianco; Busatto, Giovanni
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure
2008-01-01 Busatto, Giovanni; Currò, G; Iannuzzo, Francesco; Porzio, A; Sanseverino, Annunziata; Velardi, Francesco
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations | 1-gen-2005 | Iannuzzo, Francesco | |
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet | 1-gen-2005 | Busatto, Giovanni; A., Porzio; Velardi, Francesco; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Curr | |
Experimental and 3D simulation study on the role of Parasitic BJT Activation in SEB/SEGR of Power Mosfet | 1-gen-2005 | Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco | |
Experimental and Numerical Investigation about SEB/SEGR of Power MOSFET | 1-gen-2005 | Busatto, Giovanni; A., Porzio; Velardi, Francesco; Iannuzzo, Francesco; Sanseverino, Annunziata; G., Curr | |
The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters | 1-gen-2005 | Abbate, C.; Busatto, Giovanni; Fratelli, L.; Iannuzzo, Francesco | |
The high frequency behaviour of high voltage and current IGBT modules | 1-gen-2006 | Abbate, C; Busatto, Giovanni; Fratelli, L; Iannuzzo, Francesco | |
Investigation of MOSFET failure in soft-switching conditions | 1-gen-2006 | Iannuzzo, Francesco; Busatto, Giovanni; Abbate, C. | |
Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules | 1-gen-2006 | Abbate, C.; Busatto, Giovanni; Fratelli, L.; Iannuzzo, Francesco | |
Experimentally Study of Power MOSFET’s Gate Damage in Radiation Enviroment | 1-gen-2006 | Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco | |
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment | 1-gen-2006 | G., Busatto; G., Curro'; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco | |
Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment | 1-gen-2006 | Busatto, Giovanni; Iannuzzo, Francesco; Porzio, A; Sanseverino, Annunziata; Velardi, Francesco; Cascio, A; Curro', G; Frisina, F. | |
Experimental study of power MOSFET’s gate damage in radiation environment | 1-gen-2006 | Busatto, Giovanni; Iannuzzo, Francesco; Porzio, A; Sanseverino, Annunziata; Velardi, Francesco; Curro', G. | |
The robustness of series-connected high power IGBT modules | 1-gen-2007 | Abbate, C.; Busatto, Giovanni; Fratelli, L.; Iannuzzo, Francesco; Cascone, B.; Manzo, R. | |
Experimental characterisation of high efficiency resonant gate driver circuit | 1-gen-2007 | Abbate, C.; Busatto, Giovanni; Iannuzzo, Francesco; Fratelli, L. | |
A Novel Experimental Set-Up for Detecting Gate Leakage Current Increase During Heavy Ions Exposure of Power MOSFETs | 1-gen-2007 | Busatto, Giovanni; Iannuzzo, Francesco; A., Porzio; Sanseverino, Annunziata; Velardi, Francesco; A., Cascio; G., Curr; F., Frisina | |
High Voltage, High Performance Switch using Series Connected IGBTs | 1-gen-2008 | Busatto, Giovanni; Abbate, C.; Iannuzzo, Francesco; Abbate, B.; Fratelli, L.; Cascone, B.; Manzo, R. | |
High Performance, FPGA-based Test Apparatus for Unclamped Inductive Switching of IGBTs | 1-gen-2008 | Iannuzzo, Francesco | |
IGBT Modules Robustness During Turn-Off Commutation | 1-gen-2008 | Busatto, Giovanni; Abbate, Carmine; B., Abbate; Iannuzzo, Francesco | |
Experimental Analysis of Energy Consumption by MobileDDR Memory for Mobile Applications | 1-gen-2008 | E., LA MARRA; Iannuzzo, Francesco; M., DI ZENZO; V., Micali; G., Valeri; D., Bianco; Busatto, Giovanni | |
Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure | 1-gen-2008 | Busatto, Giovanni; Currò, G; Iannuzzo, Francesco; Porzio, A; Sanseverino, Annunziata; Velardi, Francesco |
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