Two of the most critical issues affecting the device reliability in monolithic Resistive Random Access Memories (RRAM) integration are given by the electrical and thermal crosstalk between active and passive layers in the stack. In this paper, nickel-based one-diode-one-resistor (1D1R) and 1D1R-1R1D cross-point structures are re-designed in order to enable the resistive switching in the victim layers due to the reverse biased diodes. In addition, copper and carbon nanotubes are proposed to improve the electrical and thermal performance. Simulation results show the effectiveness of the proposed solution in improving the signal and thermal integrity.
Reliable 3D 1D1R-1R1D solution for victim layers in monolithic RRAM integration
Lahbacha K.;Maffucci A.Methodology
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2020-01-01
Abstract
Two of the most critical issues affecting the device reliability in monolithic Resistive Random Access Memories (RRAM) integration are given by the electrical and thermal crosstalk between active and passive layers in the stack. In this paper, nickel-based one-diode-one-resistor (1D1R) and 1D1R-1R1D cross-point structures are re-designed in order to enable the resistive switching in the victim layers due to the reverse biased diodes. In addition, copper and carbon nanotubes are proposed to improve the electrical and thermal performance. Simulation results show the effectiveness of the proposed solution in improving the signal and thermal integrity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
