A novel Insulated Gate Bipolar Transistor (IGBT) electrothermal modeling approach involving PSpice and AN SYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach's capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.
Electro-thermal modeling of high power IGBT module short-circuits with experimental validation
IANNUZZO, Francesco;
2015-01-01
Abstract
A novel Insulated Gate Bipolar Transistor (IGBT) electrothermal modeling approach involving PSpice and AN SYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach's capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.File in questo prodotto:
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