A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity (20mV/C or more) than alternative TSEPs.
Online junction temperature measurement via internal gate resistance during turn-on
IANNUZZO, Francesco
2014-01-01
Abstract
A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity (20mV/C or more) than alternative TSEPs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
