Carbon nanotubes are proposed as innovative material for future nano-interconnects. Here a circuit model is presented to describe the electrical behavior of interconnects made by bundles of carbon nanotubes. The model is derived within the frame of the transmission line theory, starting from a semi-classical description of the carbon nanotube electrodynamics. The model includes effects related to chirality, size and temperature, hence it is suitable to analyze real-world applications, where carbon nanotube interconnect technology must meet conventional CMOS one. Case-studies are carried out referring to typical interconnects for the future 22 nm-node technology.