This paper discusses the modeling of switching losses in MOSFETs half-bridges. The model proposed in the paper provides a trade-off between accuracy and computing simplicity for quick feasibility investigations and comparative evaluations among different MOSFETs combinations to be selected for the design of high-efficiency switching power supplies. The proposed model also enables a detailed analysis of capacitive currents circulating through the MOSFETs during commutations, thus allowing a more accurate loss understanding and calculation.
Modeling switching losses in MOSFETs half-bridges
Di Capua Giulia;
2012-01-01
Abstract
This paper discusses the modeling of switching losses in MOSFETs half-bridges. The model proposed in the paper provides a trade-off between accuracy and computing simplicity for quick feasibility investigations and comparative evaluations among different MOSFETs combinations to be selected for the design of high-efficiency switching power supplies. The proposed model also enables a detailed analysis of capacitive currents circulating through the MOSFETs during commutations, thus allowing a more accurate loss understanding and calculation.File in questo prodotto:
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