The paper deals with the modeling of the parasitic resistance of nanopackaging interconnects. Two kinds of material are considered: conventional (copper) and innovative (carbon nanotubes). Both of them are modeled taking into account the effects of temperature and size, both playing a relevant role in nanopackaging. Simple but physicallymeaningful models for carbon nanotubes are proposed, based on the concept of the number of conducting channel and on the evaluation of the mean free path. The comparison between the materials is made with reference to a 30 μm-pitch pillar bump, proposed as chip-to-package interconnect.

Electrical and Thermal Behaviour of Nanopackaging Interconnects with Conventional and Innovative Materials

MAFFUCCI, Antonio;
2010

Abstract

The paper deals with the modeling of the parasitic resistance of nanopackaging interconnects. Two kinds of material are considered: conventional (copper) and innovative (carbon nanotubes). Both of them are modeled taking into account the effects of temperature and size, both playing a relevant role in nanopackaging. Simple but physicallymeaningful models for carbon nanotubes are proposed, based on the concept of the number of conducting channel and on the evaluation of the mean free path. The comparison between the materials is made with reference to a 30 μm-pitch pillar bump, proposed as chip-to-package interconnect.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11580/6438
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