This paper proposes a model for the electrical propagation along carbon nanotubes, based on a quasi-classical Boltzmann transport model. The model is accurate enough to include quantistic and kinetic effects involved at nanoscale, and simple enough to provide equivalent circuits with the physically meaningful parameters. These parameters are expressed in terms of the equivalent number of conducting channels, which takes into account CNT chiralities, temperature and diameter. This allows simulating realistic CNT bundles proposed as nano-interconnects for future VLSI applications.
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