This paper presents the design of a 25-kW Dual Active Bridge (DAB) converter based on parallel-connected SiC MOSFETs with the aim of demonstrating the applicability of discrete solutions for medium-power applications. A symmetric layout for the related gate-driving paths has been implemented and an experimental characterization of the DAB converter has been carried out considering different operating conditions in terms of input/output voltages and output power. The performances achieved in terms of electrical and thermal behavior of the paralleled SiC devices validate the proposed symmetric design.
Performance Analysis of a 25-kW SiC-based Dual Active Bridge Converter based on Parallel-connected Devices
Francesco Porpora
;Daniele Marciano;Emanuele Di Fazio;Mauro Di Monaco;Vito Nardi;Giuseppe Tomasso;
2024-01-01
Abstract
This paper presents the design of a 25-kW Dual Active Bridge (DAB) converter based on parallel-connected SiC MOSFETs with the aim of demonstrating the applicability of discrete solutions for medium-power applications. A symmetric layout for the related gate-driving paths has been implemented and an experimental characterization of the DAB converter has been carried out considering different operating conditions in terms of input/output voltages and output power. The performances achieved in terms of electrical and thermal behavior of the paralleled SiC devices validate the proposed symmetric design.File in questo prodotto:
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