Sfoglia per Autore
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT
2015-01-01 Abbate, Carmine; Busatto, Giovanni; Iannuzzo, Francesco; Mattiazzo, S.; Sanseverino, Annunziata; Silvestrin, L.; Tedesco, Davide; Velardi, Francesco
Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit
2017-01-01 Abbate, Carmine; Busatto, Giovanni; Sanseverino, A.; Tedesco, Davide; Velardi, Francesco
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation
2018-01-01 Abbate, Carmine; Busatto, Giovanni; Sanseverino, Annunziata; Tedesco, Davide; Velardi, Francesco; Simona, Mattiazzo; Luca, Silvestin
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests
2018-01-01 Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F.
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit
2018-01-01 Abbate, Carmine; Busatto, Giovanni; Sanseverino, Annunziata; Tedesco, Davide; Velardi, Francesco
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit
2019-01-01 Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F.
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I
2019-01-01 Abbate, C.; Busatto, G.; Tedesco, D.; Sanseverino, A.; Silvestrin, L.; Velardi, F.; Wyss, J.
Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II)
2019-01-01 Abbate, Carmine; Busatto, Giovanni; Tedesco, Davide; Velardi, Francesco; Sanseverino, Annunziata; Wyss, Jeffery
Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition
2020-01-01 Marciano, Daniele; Busatto, Giovanni; Abbate, Carmine; Sanseverino, Annunziata; Tedesco, Davide; Velardi, Francesco
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT | 1-gen-2015 | Abbate, Carmine; Busatto, Giovanni; Iannuzzo, Francesco; Mattiazzo, S.; Sanseverino, Annunziata; Silvestrin, L.; Tedesco, Davide; Velardi, Francesco | |
| Experimental Study of the Instabilities Observed in 650 V Enhancement Mode GaN HEMT during Short Circuit | 1-gen-2017 | Abbate, Carmine; Busatto, Giovanni; Sanseverino, A.; Tedesco, Davide; Velardi, Francesco | |
| Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation | 1-gen-2018 | Abbate, Carmine; Busatto, Giovanni; Sanseverino, Annunziata; Tedesco, Davide; Velardi, Francesco; Simona, Mattiazzo; Luca, Silvestin | |
| Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests | 1-gen-2018 | Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. | |
| Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit | 1-gen-2018 | Abbate, Carmine; Busatto, Giovanni; Sanseverino, Annunziata; Tedesco, Davide; Velardi, Francesco | |
| Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit | 1-gen-2019 | Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. | |
| Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation--Part I | 1-gen-2019 | Abbate, C.; Busatto, G.; Tedesco, D.; Sanseverino, A.; Silvestrin, L.; Velardi, F.; Wyss, J. | |
| Gate Damages Induced in SiC Power MOSFETs During Heavy Ion Irradiation (Part II) | 1-gen-2019 | Abbate, Carmine; Busatto, Giovanni; Tedesco, Davide; Velardi, Francesco; Sanseverino, Annunziata; Wyss, Jeffery | |
| Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition | 1-gen-2020 | Marciano, Daniele; Busatto, Giovanni; Abbate, Carmine; Sanseverino, Annunziata; Tedesco, Davide; Velardi, Francesco |
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