Sfoglia per Autore SANSEVERINO, Annunziata
The Effect of Recombination Centers on the Lifetime Dependence upon Temperature and Injection Level
1993-01-01 Sanseverino, Annunziata; P., Spirito
Recombination Lifetime Measurements in Silicon
1994-01-01 P., Spirito; S., Daliento; Sanseverino, Annunziata
Measurements of Process-Dependent Lifetime Profile in Si Layers for High Efficiency Solar Cells
1994-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito
Determination of the Energy Levels of the Recombination Centers in Low-Doped Si Layers by Temperature Dependence of Recombination Lifetime
1994-01-01 P., Spirito; Sanseverino, Annunziata
Rilievo del profilo del lifetime di ricombinazione con tecnica differenziale e determinazione dei centri di ricombinazione
1995-01-01 Sanseverino, Annunziata
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements
1995-01-01 S., Daliento; N., Rinaldi; Sanseverino, Annunziata; P., Spirito
Spatial Distribution of Recombination Centers in Electron Irradiated Silicon Epitaxial Layer
1996-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni
Experimental Investigation on the Effect of Irradiation on the Distribution of Recombination Centers in Silicon Epitaxial Layers
1996-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni
Recombination lifetime measurements in silicon wafers
1997-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni
Optical and Electrical Measurement of Bulk Recombination Lifetime Regardless of Surface Conditions
1997-01-01 A., Cutolo; S., Daliento; A., Irace; Sanseverino, Annunziata; P., Spirito; L., Zeni
Optimised Test Device for the Measurement of Process-Dependent Lifetime Profile in FZ Silicon Layers
1997-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito; L., Zeni; C., Peschke
A New Test Device for Lifetime Profile Measurements in Very Thick Lightly Doped Silicon Materials
1998-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito
A Novel Test Structure for the Measurement of the Multiplication Coefficient in Silicon
1998-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito
Comments on: Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers
1998-01-01 P., Spirito; S., Daliento; Sanseverino, Annunziata
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements
1998-01-01 S., Daliento; Sanseverino, Annunziata; P. M., Sarro; P., Spirito; L., Zeni
A New Test Structure for the Measurement of the Recombination Lifetime Profile in Processed Silicon Wafers
1998-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito; G. F., Vitale; L, Zeni
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System
1998-01-01 A., Cutolo; S., Daliento; Sanseverino, Annunziata; G. F., Vitale
Comments on : Temperature Dependence of Carrier Lifetime in Si wafer
1999-01-01 P., Spirito; S., Daliento; Sanseverino, Annunziata; L., Zeni
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers
1999-01-01 S., Daliento; Sanseverino, Annunziata; P., Spirito
Experimental Determination of the Intrinsic Series Resistance of Vertical Power Diodes by Means of a Special Test Structure
1999-01-01 S., Bellone; S., Daliento; Sanseverino, Annunziata
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